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Magnetic tunnel junctions (MTJs) with low switching current, high thermal stability, and small device size are strongly preferred for low-power, high-reliability, and high-density spintronic memory and logic applications. The research of MTJs from shape in-plane magnetic anisotropy to interfacial perpendicular magnetic anisotropy (i-PMA) has successfully paved the way down to 20-nm scale, below which, however, the i-PMA approach reaches a physical limit in sustaining sufficient thermal stability while achieving low-power spin transfer torque switching. Recently, studies have been reported a new approach to pave the way toward sub-10-nm MTJs satisfying the requirements by revisiting shape perpendicular magnetic anisotropy (s-PMA). In this paper, we present a compact model of the sub-10-nm s-PMA MTJ device, which captures both the static and dynamic physical behaviors. This model is SPICE-compatible for hybrid MTJ/CMOS circuit designs. This paper is expected to push forward the development of sub-10-nm-scale MTJ-based spintronic memory and logic circuits. [ABSTRACT FROM AUTHOR]

Although spin transfer torque (STT)-based magnetic tunneling junction (MTJ) owns advantages of nonvolatility, nonlimited endurance, and fast write/read, its demand for high current density significantly casts a shadow over its future prospects. Recently, a novel three-terminal MTJ cell that combines voltage-controlled magnetic anisotropy (VCMA) effect and negative capacitance (NC) effect is proposed. Drawing support from the NC amplified VCMA effect and the three-step operation scenario, this novel MTJ cell can dramatically lower the energy consumption to fJ as well as keep high operation speed within nanoseconds. The feasibility of the proposed NC enhanced VCMA spintronics device for memory and logic application is proved by extensive physical simulation in our previous work. However, a SPICE compatible compact model of the proposed NC enhanced VCMA spintronics device is still demanded for circuit and system level evaluation. In this paper, we provide an accurate and fast compact model of NC enhanced VCMA device for both memory and logic applications. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junction (MTJ)-based devices have been studied extensively as a promising candidate to implement hybrid energy-efficient computing circuits due to their nonvolatility, high integration density, and CMOS compatibility. In this paper, MTJs are leveraged to develop a novel full adder (FA) based on 3- and 5-input majority gates. Spin Hall effect (SHE) is utilized for changing the MTJ states resulting in low-energy switching behavior. SHE-MTJ devices are modeled in Verilog-A using precise physical equations. SPICE circuit simulator is used to validate the functionality of 1-bit SHE-based FA. The simulation results show 76% and 32% improvement over previous voltage-mode MTJ-based FA in terms of energy consumption and device count, respectively. The concatanatability of our proposed 1-bit SHE-FA is investigated through developing a 4-bit SHE-FA. Finally, delay and power consumption of an n -bit SHE-based adder has been formulated to provide a basis for developing an energy efficient SHE-based n -bit arithmetic logic unit. [ABSTRACT FROM PUBLISHER]

The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-magnetic tunnel junctions (MTJs) implemented in Verilog-A to assure easy integration with electrical circuit simulators. It takes into account the effects of voltage-dependent perpendicular magnetic anisotropy, temperature-dependent parameters, thermal heating/cooling, MTJ process variations, and the spin-torque asymmetry of the Slonczewski spin-polarization function in the switching process. This translates into a comprehensive modeling that was adopted to investigate the writing performance under voltage scaling of a $256\times256$ STT- magnetic random access memory array implemented at three different technology nodes. Obtained results show that scaling from 30- to 20-nm node allows a write energy saving of about 43%, while the supply voltage that assures the minimum-energy write operation increases. [ABSTRACT FROM PUBLISHER]

Benefiting from its simple switching scheme (only a bidirectional current source), high-speed and low-power spin-transfer torque (STT) has been regarded as one of the most promising switching mechanisms for a magnetic tunnel junction (MTJ)-based non-volatile memory and logic circuits. However, it suffers from a number of reliability issues like write error induced by its intrinsic stochasticity, process variation, and so on. In order to reduce the write error rate, the mainstream solution is to enlarge the write pulse duration at the expense of write energy dissipation. Some self-terminated write circuits have been proposed to avoid the wasted write energy. But the hardware cost of these write circuits is especially large. In this paper, a novel cost-efficient self-terminated write circuit is proposed using two simple built-in sensing circuits. The proposed write circuit is simulated with a physics-based STT-MTJ compact model and a commercial CMOS 40 nm design kit. The simulation result shows about 35% reduction of circuit area and 10% lower energy consumption in comparison with that in prior work. In addition, the Error-Free write operation under process variation of both the CMOS transistor and the STT-MTJ is achieved due to its large sense margin ( $\sim 320$ mV). [ABSTRACT FROM PUBLISHER]

Spin-transfer torque magnetic random access memory (STT-MRAM) is a promising emerging memory technology due to its various advantageous features such as scalability, nonvolatility, density, endurance, and fast speed. However, the reliability of STT-MRAM is severely impacted by environmental disturbances because radiation strike on the access transistor could introduce potential write and read failures for 1T1MTJ cells. In this paper, a comprehensive approach is proposed to evaluate the radiation-induced soft errors spanning from device modeling to circuit level analysis. The simulation based on 3-D metal-oxide-semiconductor transistor modeling is first performed to capture the radiation-induced transient current pulse. Then a compact switching model of magnetic tunneling junction (MTJ) is developed to analyze the various mechanisms of STT-MRAM write failures. The probability of failure of 1T1MTJ is characterized and built as look-up-tables. This approach enables designers to consider the effect of different factors such as radiation strength, write current magnitude and duration time on soft error rate of STT-MRAM memory arrays. Meanwhile, comprehensive write and sense circuits are evaluated for bit error rate analysis under random radiation effects and transistors process variation, which is critical for performance optimization of practical STT-MRAM read and sense circuits. [ABSTRACT FROM PUBLISHER]

The current-induced perpendicular magnetic anisotropy magnetic tunnel junctions (p-MTJs) offer a number of advantages, such as high density and high speed. As p-MTJs downscale to $\sim 40$ nm, further performance enhancements can be realized thanks to high spin-torque efficiency, i.e., lower critical current density and higher thermal stability. In this paper, we investigate the origin of high spin-torque efficiency and give a phenomenological theory to describe the critical current reduction due to the subvolume activation. Based on various physical theories and structural parameters, a compact model of nanoscale MTJ is developed and demonstrates a satisfactory agreement with experimental results. Dynamic, static, and stochastic switching behaviors have been addressed and validated. Then, we perform mixed simulations for hybrid MTJ/CMOS read/write circuits, magnetic random access memory, and magnetic flip-flop to evaluate their performance. Analyses of energy consumption are given to show the prospect of MTJ technology node miniaturization. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a capacity for high-speed performance and low power consumption through current-induced magnetization switching. In this paper, we present a compact model of the CoFeB/MgO PMA MTJ, a system exhibiting the best tunnel magnetoresistance ratio and switching performance. It integrates the physical models of static, dynamic, and stochastic behaviors; many experimental parameters are directly included to improve the agreement of simulation with experimental measurements. Mixed simulation based on the 65-nm technology node of a magnetic flip-flop validates its relevance and efficiency for MTJ/CMOS memory and logic chip design. [ABSTRACT FROM AUTHOR]