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The objective of this work is to study for the first time the combination of electron beam (EB) surface structuring and plasma electrolytic oxidation (PEO) with the aim of providing a multiscale topography and bioactive surface to the Ti6Al4V alloy for biomedical applications. Ca and P-containing coatings were produced via 45 s PEO treatments over multi-scale EB surface topographies. The coatings morphology and composition were characterized by a means of scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The effect on the previous EB topography was evaluated by means of a 3D optical profilometry and electrochemical response via potentiodynamic polarization tests. In general, the PEO process, morphology, composition and growth rate of the coatings were almost identical, irrespective of the topography treated. Minimal local differences were found in terms of morphology, and the growth rate were related to specific topographical features. Nevertheless, all the PEO-coated substrates presented essentially the same corrosion resistance. Electrochemical tests revealed a localized crevice corrosion susceptibility of all the bare EB topographies, which was successfully prevented after the PEO treatment., MICINN/AEI/ FEDER, UE, Comunidad de Madrid, Comunidad de Madrid, UCM, Christian Doppler Forschungsgesellschaft, Depto. de Ingeniería Química y de Materiales, Fac. de Ciencias Químicas, TRUE, pub

The objective of this work is to study for the first time the combination of electron beam (EB) surface structuring and plasma electrolytic oxidation (PEO) with the aim of providing a multiscale topography and bioactive surface to the Ti6Al4V alloy for biomedical applications. Ca and P-containing coatings were produced via 45 s PEO treatments over multi-scale EB surface topographies. The coatings morphology and composition were characterized by a means of scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The effect on the previous EB topography was evaluated by means of a 3D optical profilometry and electrochemical response via potentiodynamic polarization tests. In general, the PEO process, morphology, composition and growth rate of the coatings were almost identical, irrespective of the topography treated. Minimal local differences were found in terms of morphology, and the growth rate were related to specific topographical features. Nevertheless, all the PEO-coated substrates presented essentially the same corrosion resistance. Electrochemical tests revealed a localized crevice corrosion susceptibility of all the bare EB topographies, which was successfully prevented after the PEO treatment., MICINN/AEI/ FEDER, UE, Comunidad de Madrid, Comunidad de Madrid, UCM, Christian Doppler Forschungsgesellschaft, Depto. de Ingeniería Química y de Materiales, Fac. de Ciencias Químicas, TRUE, pub

The character of the residual stress in the surface layer of the optical glass plates K8, which result from thermoelectric effects in electron beam processing of the surface was defined. Residual stresses in the surface layer of optical glass is characteristic result of the thermoelectric action on the material the electron beam (as in the formation of a liquid phase in the surface layer, both with and without it). It is shown that the strength of the modified surface layer of glass depends on the cooling mode. The mechanism of residual stresses is used for directed exfoliation of the surface-modified layer in the form of plates required shapes.

Research on the use of directed energy sources, particularly cw lasers and electron beams, for semiconductor processing operations has been carried out at Stanford under the prinicipal sponsorship of DARPA since January 1, 1978. Over the two years from January 1, 1978 to December 31, 1980, research effort has been concentrated on three principal topics: (1) Use of lasers and electron beams for annealing ion implanted silicon under solid phase conditions; (2) Use of lasers and arc sources for recrystallization of thin polysilicon films and a study of the device potential of this material; and (3) Use of cw lasers and electron beams for promoting metal silicide reactions. In the following report we collect papers on the annealing of ion implanted silicon published during the period of time indicated above. A brief summary of the papers has been prepared to provide an overview of the work. Two subsquent reports will collect and summarize papers published on polysilicon and silicide formation, respectively.

Research on the use of directed energy sources, particularly cw lasers and electron beams, for semiconductor processing operations has been carried out at Standford under the principal sponsorship of DARPA since January 1, 1978. Over the two years from January 1, 1978 to December 31, 1980, research effort has been concentrated on three principal topics: (1) Use of lasers and electron beams for annealing ion implanted silicon under solid phase conditions; (2) Use of lasers and arc sources fro recrystallization of thin polysilicon films and a study of the device potential of this material; and (3) Use of cw lasers and electron beams for promoting metal silicide reactions. In the following report we collect papers that describe the cw beam recrystallization of thin polysilicon films and the use of this material for device and integrated circuit fabrication. A subsequent report will collect and summarize papers on silicide formation., Sponsored in part by DARPA.