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Liangjing Lv,1,&ast; Yangmei Zhou,1,&ast; Xiangjun Chen,1 Lilin Gong,1 Jinshan Wu,1 Wenjin Luo,1 Yan Shen,1 Shichao Han,2 Jinbo Hu,1 Yue Wang,1 Qifu Li,1 Zhihong Wang1 On behalf of the Chongqing Diabetes Registry Group1Department of Endocrinology, The First Affiliated Hospital of Chongqing Medical University, Chongqing, People’s Republic of China; 2Department of Statistics, University of California, Berkeley, CA, USA&ast;These authors contributed equally to this workCorrespondence: Zhihong WangDepartment of Endocrinology, The First Affiliated Hospital of Chongqing Medical University, Yuzhong District, Chongqing, People’s Republic of ChinaTel/Fax +86-023-89011552Email towzh713@126.comBackground: Diabetic kidney disease (DKD) lacks a simple and relatively accurate predictor. The Triglyceride–Glucose (TyG) Index is a proxy of insulin resistance, but the association between the TyG Index and DKD is less certain. We investigated if the TyG Index can predict DKD onset effectively.Materials and Methods: Cross-sectional and longitudinal analyses were undertaken. In total, 1432 type-2 diabetes mellitus (T2DM) patients were included in the cross-sectional analysis. The TyG Index (calculated by ln [fasting triglycerides (mg/dL) × fasting glucose (mg/dL)/2]) was split into three tertiles. Associations of the TyG Index with microalbuminuria and estimated glomerular filtration rate (eGFR) < 60 mL/min/1.73 m2 were calculated. Longitudinally, 424 patients without DKD at baseline were followed up for 21 (range, 12– 24) months. The main outcome was DKD prevalence as defined with eGFR < 60 mL/min/1.73 m2 or continuously increased urinary microalbuminuria: creatinine ratio (> 30 mg/mL) over 3 months. Cox regression was used to analyze the association between the TyG Index at baseline and DKD. Receiver operating characteristics curve (ROC) analysis was used to assess the sensitivity and specificity of the TyG Index in predicting DKD.Results: In cross-sectio

Wafer-scale multilayer GaSe was directly deposited on n-type GaSb substrates with a layer-by-layer epitaxial growth mode, which formed a vertical heterostructure of a dual-band photodetector. Indium (In) as the electrodes was formed on the surface of GaSe and GaSb, as the anode and cathode. To better demonstrate the vertical stacking process of the heterojunction structure, ab initio simulations were performed for GaSe nanosheet grown on the GaSb substrate.