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Qingzhu Zhang,1,2 Yinhui Yao,3 Yufeng Chen,1 Dong Ren,1 Pengcheng Wang1 1Orthopedic Trauma Service Center, Third Hospital of Hebei Medical University, Major Laboratory of Orthopedic Biomechanics in Hebei Province, Shijiazhuang, Hebei Province, People’s Republic of China; 2Department of Orthopedics, the Affiliated Hospital of Chengde Medical University, Chengde, Hebei Province, People’s Republic of China; 3Department of Pharmacy, the Affiliated Hospital of Chengde Medical University, Chengde, Hebei Province, People’s Republic of ChinaCorrespondence: Pengcheng Wang, Orthopedic Trauma Service Center, Third Hospital of Hebei Medical University, Major Laboratory of Orthopedic Biomechanics in Hebei Province, Shijiazhuang, Hebei Province, People’s Republic of China, Email zhengzainingmeng@163.comAim: A high percentage of the elderly suffer from knee osteoarthritis (KOA), which imposes a certain economic burden on them and on society as a whole. The purpose of this study is to examine the risk of KOA and to develop a KOA nomogram model that can timely intervene in this disease to decrease patient psychological burdens.Methods: Data was collected from patients with KOA and without KOA at our hospital from February 2021 to February 2023. Initially, a comparison was conducted between the variables, identifying statistical differences between the two groups. Subsequently, the risk of KOA was evaluated using the Least Absolute Shrinkage and Selection Operator method and multivariate logistic regression to determine the most effective predictive index and develop a prediction model. The examination of the disease risk prediction model in KOA includes the corresponding nomogram, which encompasses various potential predictors. The assessment of disease risk entails the application of various metrics, including the consistency index (C index), the area under the curve (AUC) of the receiver operating characteristic curve, the calibration chart, the GiViTi calibration band, an

Elemental mercury (Hg0) is a highly hazardous pollutant of coal combustion. The low-temperature SCR catalyst of MnOx/TiO2 can efficiently remove Hg0 in coal-burning flue gas. Considering its sulfur sensitivity, the effect of SO3 on the catalytic efficiency of MnOx/TiO2 and Fe modified MnOx/TiO2 for Hg0 removal was investigated comprehensively for the first time. Characterizations of Hg-TPD and XPS were conducted to explore the catalytic mechanisms of Hg0 removal processes under different conditions. Hg0 removal efficiency of MnOx/TiO2 was inhibited irreversibly from 92% to approximately 60% with the addition of 50 ppm SO3 at 150 ℃, which resulted from the transformation of Mn4+ and chemisorbed oxygen to MnSO4. The existence of H2O would intensify the inhibitory effect. The inhibition almost disappeared and even converted to promotion as the temperature increased to 250 ℃ and above. Fe modification on MnOx/TiO2 improved the Hg0 removal performance in the presence of SO3. The addition of SO3 caused only a slight inhibition of 1.9% on Hg0 removal efficiency of Fe modified MnOx/TiO2 in simulated coal-fired flue gas, and the efficiency maintained good stability during a 12 h experimental period. This work would be conducive to the future application of MnOx/TiO2 for synergistic Hg0 removal.

A kinetic approach was adopted to analyze the reaction mechanism of elemental mercury (Hg0) oxidation by HCl over three Mn-based low-temperature SCR catalysts, MnOx/TiO2, Fe-MnOx/TiO2 and CeMnO3. Experimental results validated that Hg0 oxidation efficiencies of the catalysts were promoted by HCl at different temperatures. The kinetic models for the heterogeneous Hg0 oxidation were established and verified based on the experimental data. The verification results demonstrated that Hg0 oxidation over the Mn-based catalysts follows Langmuir-Hinshelwood mechanism. The kinetic parameters of reaction rate constant and HCl adsorption constant were calculated from the model fitting equations. The reaction rate constant was raised with the increase of temperature, while the HCl adsorption constant presented the opposite trend. The Mn-based catalysts with the reaction rate constant of 84.17–335.77 s−1 showed the advantage over some other catalysts such as commercial V2O5-(WO3)/TiO2 and CeO2/TiO2. The kinetic parameters were further improved in the presence of O2. The apparent activation energy for Hg0 oxidation over the catalysts that was derived from the kinetic parameters was 4.13–12.53 kJ/mol, which was much lower than that of the other approaches. The advantageous kinetic parameters and apparent activation energy were favorable for the Mn-based catalysts to act as low-temperature SCR catalyst for synergistic Hg0 removal. The kinetic study results were of fundamental significance for designing the reactor according to the known flue gas conditions, used catalyst and required Hg0 oxidation efficiency.

Precise time trajectories and detailed reaction pathways of the Diels-Alder reaction were directly observed using accurate single-molecule detection on an in situ label-free single-molecule electrical detection platform. This study demonstrates the well-accepted concerted mechanism and clarifies the role of charge transfer complexes with endo or exo configurations on the reaction path. An unprecedented stepwise pathway was verified at high temperatures in a high-voltage electric field. Experiments and theoretical results revealed an electric field-catalyzed mechanism that shows the presence of a zwitterionic intermediate with one bond formation and variation of concerted and stepwise reactions by the strength of the electric field, thus establishing a previously unidentified approach for mechanistic control by electric field catalysis.

Precise time trajectories and detailed reaction pathways of the Diels-Alder reaction were directly observed using accurate single-molecule detection on an in situ label-free single-molecule electrical detection platform. This study demonstrates the well-accepted concerted mechanism and clarifies the role of charge transfer complexes with endo or exo configurations on the reaction path. An unprecedented stepwise pathway was verified at high temperatures in a high-voltage electric field. Experiments and theoretical results revealed an electric field-catalyzed mechanism that shows the presence of a zwitterionic intermediate with one bond formation and variation of concerted and stepwise reactions by the strength of the electric field, thus establishing a previously unidentified approach for mechanistic control by electric field catalysis.

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.

When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

The physical treatment of internal mixing and aging of black carbon (BC) aerosols that allow for enhanced solar absorption of the BC is an important parameterization in climate models. Many climate models predict a factor of 2-3 lower aerosol absorption optical depth (AAOD) than the atmospheric columnar absorption observed from ground-based networks such as AERONET, likely because these models do not parameterize properly the BC absorption enhancement (E-MAC). Models that are configured with an internal mixing have predicted large variations of E-MAC, which are poorly constrained from ambient measurements. We determined the BC E-MAC from aerosol coatings with a two-step solvent experiment to remove both organic and inorganic coatings in ambient fine particulate matter (PM2.5). Observations in a rural North China site showed that the E-MAC varied from 1.4 to 3. The E-MAC increases simultaneously with SO42-/EC ratios, suggesting the photochemical production of sulfate coatings enhanced BC absorption. A global climate model, parameterized to account for these observational constraints, verifies that sulfates are primary drivers of the BC absorption enhancement in severely polluted area in China. This magnification of the radiative forcing of coated BC is stronger by a factor of similar to 2 than predicted by the standard parameterization (external mixing) in the climate model and is in better agreement with AERONET observations of AAOD. This result would be useful for testing the representation of solar absorption by BC-containing particles in the newer generation of climate models. Plain Language Summary Atmospheric black carbon (BC) or soot in fine particulate matter (PM2.5) is emitted from incomplete combustion of fossil fuel or biomass/biofuel. The BC is an important pollutant for both air quality and Earth's energy balance, and the BC radiative forcing maybe second only to that of CO2. The photochemical production of nonabsorbing secondary aerosols may create a co

Peroxy acetyl nitrate (PAN) is a key component of photochemical smog and plays an important role in atmospheric chemistry. Though it has been known that PAN is produced via reactions of nitrogen oxides (NOx) with some volatile organic compounds (VOCs), it is difficult to quantify the contributions of individual precursor species. Here we use an explicit photochemical model--Master Chemical Mechanism (MCM) model--to dissect PAN formation and identify principal precursors, by analyzing measurements made in Beijing in summer 2008. PAN production was sensitive to both NOx and VOCs. Isoprene was the predominant VOC precursor at suburb with biogenic impact, whilst anthropogenic hydrocarbons dominated at downtown. PAN production was attributable to a relatively small class of compounds including NOx, xylenes, trimethylbenzenes, trans/cis-2-butenes, toluene, and propene. MCM can advance understanding of PAN photochemistry to a species level, and provide more relevant recommendations for mitigating photochemical pollution in large cities.

Peroxy acetyl nitrate (PAN) is a key component of photochemical smog and plays an important role in atmospheric chemistry. Though it has been known that PAN is produced via reactions of nitrogen oxides (NOx) with some volatile organic compounds (VOCs), it is difficult to quantify the contributions of individual precursor species. Here we use an explicit photochemical model--Master Chemical Mechanism (MCM) model--to dissect PAN formation and identify principal precursors, by analyzing measurements made in Beijing in summer 2008. PAN production was sensitive to both NOx and VOCs. Isoprene was the predominant VOC precursor at suburb with biogenic impact, whilst anthropogenic hydrocarbons dominated at downtown. PAN production was attributable to a relatively small class of compounds including NOx, xylenes, trimethylbenzenes, trans/cis-2-butenes, toluene, and propene. MCM can advance understanding of PAN photochemistry to a species level, and provide more relevant recommendations for mitigating photochemical pollution in large cities.