1. Low-temperature bonding of Si and polycrystalline diamond with ultra-low thermal boundary resistance by reactive nanolayers.
- Author
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Zhong, Yi, Bao, Shuchao, He, Ran, Jiang, Xiaofan, Zhang, Hengbo, Ruan, Wenbiao, Zhang, Mingchuan, and Yu, Daquan
- Subjects
INTERFACIAL resistance ,POLYCRYSTALLINE semiconductors ,DIAMONDS ,NANODIAMONDS ,CRYSTAL grain boundaries ,THERMOCYCLING ,RECRYSTALLIZATION (Metallurgy) - Abstract
• A novel bonding technique to connect diamonds with semiconductors was proposed. • Achieved an ultra-low thermal boundary resistance in Si/diamond connections. • This bonding offers low thermal budget and high reliability. • The bonding achieved by atomic interdiffusion and reactive recrystallization. Thermal management is a critical challenge in modern electronics and recent key innovations have focused on integrating diamond directly onto semiconductors for efficient cooling. However, the connection of diamond/semiconductor that can simultaneously achieve low thermal boundary resistance (TBR), minimal thermal budget, and sufficient mechanical robustness remains a formidable challenge. Here, we propose a collective wafer-level bonding technique to connect polycrystalline diamonds and semiconductors at 200 °C by reactive metallic nanolayers. The resulting silicon/diamond connections exhibited an ultra-low TBR of 9.74 m
2 K GW–1 , drastically outperforming conventional die-attach technologies. These connections also demonstrate superior reliability, withstanding at least 1000 thermal cycles and 1000 h of high temperature/humidity torture. These properties were affiliated with the recrystallized microstructure of the designed metallic interlayers. This demonstration represents an advancement for low-temperature and high-throughput integration of diamonds on semiconductors, potentially enabling currently thermally limited applications in electronics. [Display omitted] [ABSTRACT FROM AUTHOR]- Published
- 2024
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