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We introduce a monitoring system of electricity demand of fused magnesium furnace (FMF) process. Fused magnesia is commonly used in producing fire-resistant materials. The manufacturing process of fused magnesia with electric arc melting furnace is highly energy intensive. The main purpose of monitoring the electricity power demand is to avoid the demand spikes which may break the limit imposed by local grid operators. We present a data-driven approach to forecast the event of demand threshold breakout. The monitoring system proposed in this paper employs cloud computing technology to support remote and mobile monitoring. Also, a three dimensional visual simulation of the manufacturing scene is provided as an auxiliary monitoring function.

Myofascial Pain Syndrome (MPS) is a prevalent disease, and the related literature research has been increasing in recent years. However, there is a lack of scientific and comprehensive bibliometric analyses in the MPS research field. This study aimed to summarize and visualize the literature distribution laws, research hotspots and development trends in MPS based on bibliometric methods. Relevant literature on MPS research from 1956 to 2022 was retrieved from the Web of Science Core Collection database. Quantitative and visual analyses of the collected literature were performed using Microsoft Office 2021, Bibliometrics, VOSviewer, and CiteSpace. A total of 1099 papers were included, and the number of papers in this research field is generally upward. The USA has the most publications (270), and Univ Sao Paulo is the institution with the most publications (31). Hong CZ and Calvo-Lobo C have the same number of publications and are the authors with the most publications (20), and Simons DG is the author with the most co-citations (1078). Journal of Musculoskeletal Painis the journal with the most publications (61), and Painis the journal with the most co-cited papers (2598) and the highest impact factor (7.926). Lidocaine injection versus dry needling to myofascial trigger point. The importance of the local twitch responseis the reference with the highest number of co-citations (136). The top 5 keywords in this period are myofascial pain syndrome (571), trigger points (218), pain (97), myofascial pain (92), and myofascial trigger point (80). The keywords of recent bursts are dry needling (2016–2022), efficacy (2020–2022), validity (2020–2022), temporomandibular joint disorder (2020–2022), and orofacial pain (2020–2022). This study summarizes and visualizes the evolution, research hotspots, and future trends of the global MPS domain from 1956 to 2022. It is helpful for scholars to understand the general situation of MPS research quickly and provide a reference for clinical decision-making and future research directions.

As chemical mechanical polishing (CMP) becomes an essential step for fabrication phase change memory (PCM) device, industry always concerns that aggressive chemical components in the slurry might affect the composition and reliability of the phase change material Ge2Sb2Te5 (GST). In this study, we evaluated typical slurry component hydrogen peroxide on amorphous GST CMP. Silica-based slurries without H2O2 and with H2O2 at low (0.5wt%) and high concentrations (5wt%) were used for investigation. First, the polishing performance was compared. Then, auger electron spectroscopy (AES) was adopted to analyze the depth profile of Ge, Sb, Te and O for GST samples processed by different concentrations' H2O2. We also evaluated the phase change properties as a function of ageing time for those samples. To further evaluate the effect of H2O2 induced surface oxidation layer on PCM device, thermal simulation was used to compare the difference of thermal consumption and distribution during the operation.

The author survey the role of (NH4)2S2O8 and H2O2 as oxidizer on the amorphous Ge2Sb2Te5 (a-GST) chemical mechanical planarization (CMP) in acidic slurry, respectively. Compared with H2O2, higher removal rate and higher sheet resistance are achieved with (NH4)2S2O8 after a-GST CMP. To understand the oxidation-reaction capability of Ge, Sb and Te elements, potentiodynamic polarization curves, the depth profiles of composition elements and etch morphology of a-GST immersed in slurries for some time are conducted, respectively. At last, the possible polishing mechanism for a-GST CMP is presented briefly.

Various water soluble organic additives were used in ceria-based slurries to control both the silicon oxide and silicon nitride film removal rates. Our polish results and zeta potential data suggest that the additives with b-diketonatelike structures can inhibit both oxide and nitride removal rates. We propose possible complexing between the additives and the ceria abrasives might be responsible for this removal rate inhibition.

STI (Shallow-Trench-Isolation) and ILD (Inter-layer-Dielectric polishing steps are important polish stages in FEOL (Front-End- of-Line) due to the early stage of transistor device formation. In recent years, ceria based slurries have been used in STI and ILD applications, and the slurry has demonstrated self-stopping capability for better planarization efficiency and wider process window. Many studies have been done on the mechanism of why ceria has better selectivity than silica, particularly at the interface between wafer and abrasive interaction. This paper will focus on the effect of pad properties as well as slurry additives through a detailed pad characterization and slurry formulation study of ceria-based slurry. Polishing tests have been performed to investigate the interaction between wafer, slurry and pad through in-situ friction coefficient measurements. Consumables selection recommendation and polishing mechanism will be discussed as well in this paper.

We report on basic wet-etching solutions for (GST) phase change material. A scanning electronic microscope was used to observe the surface morphology and measure the etching rate. On the basis of the etching results, it was found that the aqueous solutions of 10 vol % plus 25 wt % bases, such as KOH, , and tetramethylammonium hydroxide, resulted in lower etching rates but a much smoother surface than that of common acid solutions. In addition, the etching process could be well controlled. Further X-ray photoelectron spectroscopy study of the etched samples showed that GST, etched by KOH, possessed higher oxidized states than that by , which revealed that the etching process was milder in basic solutions, while the dissolution of GST was more favored in acid environments due to the protonation effect.

We report about the effect of acids and surfactants on the chemical mechanical polishing (CMP) of (GST). A scanning electronic microscope was used to measure the material removal rate. An atomic force microscope was adopted to characterize the surface quality. On the basis of the polishing results, the GST CMP process was promoted by the additives with an increase in the molecular chain length and the O/OH number. A possible reaction mechanism was presented. Furthermore, the comparison of the electrical property of GST films before and after CMP revealed that the polished GST film possessed a higher resistivity due to the surface oxidation, which would be beneficial for reducing the high reset current of the phase-change memory cells.

We develop a 200mm Titanium Nitride (TiN) atomic vapor deposition (AVD) process for phase change memory (PCM). Diluted TDEAT is used for the deposition. By optimum the AVD parameters, we successfully develop the TiN process with accurately controllable deposition rate, good surface, stable resistivity and good repeatability. This process can be efficiently applied to PCM as the electrodes and electrode contacts.

As chemical mechanical polishing (CMP) becomes an essential step for fabrication phase change memory (PCM) device, industry always concerns that aggressive chemical components in the slurry might affect the composition and reliability of the phase change material Ge2Sb2Te5 (GST). In this study, we evaluated typical slurry component hydrogen peroxide on amorphous GST CMP. Silica-based slurries without H2O2 and with H2O2 at low (0.5wt%) and high concentrations (5wt%) were used for investigation. First, the polishing performance was compared. Then, auger electron spectroscopy (AES) was adopted to analyze the depth profile of Ge, Sb, Te and O for GST samples processed by different concentrations' H2O2. We also evaluated the phase change properties as a function of ageing time for those samples. To further evaluate the effect of H2O2 induced surface oxidation layer on PCM device, thermal simulation was used to compare the difference of thermal consumption and distribution during the operation.

The author survey the role of (NH4)2S2O8and H2O2as oxidizer on the amorphous Ge2Sb2Te5(a-GST) chemical mechanical planarization (CMP) in acidic slurry, respectively. Compared with H2O2, higher removal rate and higher sheet resistance are achieved with (NH4)2S2O8after a-GST CMP. To understand the oxidation-reaction capability of Ge, Sb and Te elements, potentiodynamic polarization curves, the depth profiles of composition elements and etch morphology of a-GST immersed in slurries for some time are conducted, respectively. At last, the possible polishing mechanism for a-GST CMP is presented briefly.

Various water soluble organic additives were used in ceria-based slurries to control both the silicon oxide and silicon nitride film removal rates. Our polish results and zeta potential data suggest that the additives with β-diketonatelike structures can inhibit both oxide and nitride removal rates. We propose possible complexing between the additives and the ceria abrasives might be responsible for this removal rate inhibition.

STI (Shallow-Trench-Isolation) and ILD (Inter-layer-Dielectric polishing steps are important polish stages in FEOL (Front-End- of-Line) due to the early stage of transistor device formation. In recent years, ceria based slurries have been used in STI and ILD applications, and the slurry has demonstrated self-stopping capability for better planarization efficiency and wider process window. Many studies have been done on the mechanism of why ceria has better selectivity than silica, particularly at the interface between wafer and abrasive interaction. This paper will focus on the effect of pad properties as well as slurry additives through a detailed pad characterization and slurry formulation study of ceria-based slurry. Polishing tests have been performed to investigate the interaction between wafer, slurry and pad through in-situ friction coefficient measurements. Consumables selection recommendation and polishing mechanism will be discussed as well in this paper.

We report on basic wet-etching solutions for Ge2Sb2Te5(GST) phase change material. A scanning electronic microscope was used to observe the surface morphology and measure the etching rate. On the basis of the etching results, it was found that the aqueous solutions of 10 vol % H2O2plus 25 wt % bases, such as KOH, NH3⋅H2O, and tetramethylammonium hydroxide, resulted in lower etching rates but a much smoother surface than that of common acid solutions. In addition, the etching process could be well controlled. Further X-ray photoelectron spectroscopy study of the etched samples showed that GST, etched by KOH, possessed higher oxidized states than that by HNO3, which revealed that the etching process was milder in basic solutions, while the dissolution of GST was more favored in acid environments due to the protonation effect.

We report about the effect of acids and surfactants on the chemical mechanical polishing (CMP) of Ge2Sb2Te5(GST). A scanning electronic microscope was used to measure the material removal rate. An atomic force microscope was adopted to characterize the surface quality. On the basis of the polishing results, the GST CMP process was promoted by the additives with an increase in the molecular chain length and the O/OH number. A possible reaction mechanism was presented. Furthermore, the comparison of the electrical property of GST films before and after CMP revealed that the polished GST film possessed a higher resistivity due to the surface oxidation, which would be beneficial for reducing the high reset current of the phase-change memory cells.

We develop a 200mm Titanium Nitride (TiN) atomic vapor deposition (AVD) process for phase change memory (PCM). Diluted TDEAT is used for the deposition. By optimum the AVD parameters, we successfully develop the TiN process with accurately controllable deposition rate, good surface, stable resistivity and good repeatability. This process can be efficiently applied to PCM as the electrodes and electrode contacts.

We report on the use of mixed abrasives slurries (MAS) containing boron carbide and ceria abrasives for chemical mechanical polishing of sapphire wafer. Possible MAS configuration theory was presented, on the basis of which a material removal rate as high as 180nm∕minand good surface with a root mean square (rms) of 2.1nmwere achieved. Through a succedent reactive ion etching process, we further improved the sapphire surface quality to an rms of 0.7nm, which showed a finely global planarization of the wafer had been achieved.