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We have carried out the hohlraum experiments about radiation temperature scaling on the Shenguang-II (SG-II) laser facility with eight laser beams of 0.35 μm, pulse duration of about 1.0 ns and total energy of 2000 J. The reradiated x-ray flux through the laser entrance hole was measured using a soft x-ray spectrometer. The measured peak radiation temperature was 170 eV for the standard hohlraum and 150 eV for the 1.5-scaled one. We have derived the radiation temperature scaling law, in which the laser hohlraum coupling efficiency is included. With an appropriate coupling efficiency, the coincidences between experimental and scaling hohlraum radiation temperatures are rather good.

Poly-3-hexylthiophene (P3HT) is coated on a chemically modified SiO2 gate dielectric layer as an active layer to fabricate organic thin-film transistors (OTFTs). This study uses a new atmospheric-pressure plasma (APP) approach to treat SiO2 surfaces, and investigates its effect on the electric characteristics of OTFTs. The APP process can be performed at low temperature (<100ºC) and atmospheric pressure, so it is very suitable for use on a plastic substrate. After the SiO2 surface has been modified by the APP process with hexamethyldisilazane (HMDS), it exhibits typical I-V characteristics of TFTs. Calculations reveal that its field effect mobility can reach 0.02-0.03 cm2/Vs, which is about 15 times higher than that before the modification, and the threshold voltage is below -10V. The performance is even better than that obtained following the usual surface treatment of the SiO2 surface by spin-coating or evaporation.