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Inspired by the double-helix structure of biological DNA, low-volume fraction and high-strength Al 2 O 3 twisted honeycomb structures with characteristics similar to those of helical structures in the z -axis were prepared by digital light processing 3D printing technology. As the twist angle increased, the compressive strength of the fabricated Al 2 O 3 structure decreased, and the deformation mechanism of the Al 2 O 3 structures gradually changed from stretching-dominated to bending-dominated, which can be predicted by the Gibson–Ashby model. The relationship between the effective elastic modulus and the volume fraction that can be modified by varying the wall thickness was described by the Pabst–Gregorova exponential relationship. The compressive strength of the Al 2 O 3 structure with a twist angle of 0° can reach 62.4 MPa at a volume fraction of 13.3%, providing guidance to optimize lightweight structures of ceramics. [ABSTRACT FROM AUTHOR]

Digital light processing 3D printing can be applied to fabricate complex silicon nitride (Si 3 N 4) components. However, because of the surface hydroxyl groups and large refractive index, it is still a foremost challenge to realize a stable photosensitive Si 3 N 4 slurry with combined benefits of low viscosity and large curing depth. In this study, we propose a new formulation strategy to prepare Si 3 N 4 slurry. Starting from the optimization of monomer ratio, we have systematically optimized powder particle size, dispersant and photoinitiator on the rheological properties and curing properties of Si 3 N 4 slurry. Specifically, we have fabricated a stable photosensitive Si 3 N 4 slurry (48 vol%) with a viscosity of 2.09 Pa s (30 s−1), a critical curing energy of 126.09 mJ/cm2 and a maximum curing depth of 80 µm. Finally, based on this optimized slurry, we have successfully obtained complex Si 3 N 4 green body with no defect, which demonstrates great potential to fabricate arbitrary complex ceramic components for various applications. [ABSTRACT FROM AUTHOR]

Nano-SiO 2 porous thermal insulating material (TIM) has drawn tremendous research interests due to its advantages of low density, high porosity and low thermal conductivity. However, its long-term stability in humid environment can be severely deteriorated by the high hydrophilicity resulting from tetrahedral coordination of oxygen and capillary effect of porous structure. It is still a great challenge to cost-effectively fabricate bulk TIM with superior hydrophobicity and consequent remarkable self-cleaning capability. Herein, via an oil-in-water microemulsion treatment, we have proposed a new strategy to construct 3D superior hydrophobic nano-SiO 2 porous TIM. The polymethylhydrosiloxane-modified TIM exhibits a large water contact angle of 166°, and corresponding excellent self-cleaning characteristic while maintaining low thermal conductivity of 0.031 W/m·K. Moreover, our high hydrophobicity of TIM exhibits excellent durability under high temperature up to 400 °C, high humidity of 100%, and chemical erosions. Detailed knowledge of the physical chemistry basis of the superior hydrophobic nano-SiO 2 porous TIM can provide great opportunity to fabricate advanced self-cleaning and heat insulating devices especially targeted for harsh environments. [ABSTRACT FROM AUTHOR]

Regarding advanced 5G mobile communication, microwave dielectric ceramics are considered as the most potential materials to develop new-generation base station resonators. Herein, ZnNb 2 O 6 ceramics with ε r of approximately 24 have been prepared using the solid-state reaction method, with tailored extra ZnO of x mol% (x = 1, 2 and 3). We have for the first time applied the P-V-L chemical bond theory to investigate ZnNb 2 O 6 ceramics with ZnO doping, by exploring the relationship of dielectric properties and chemical bond characteristics. Particularly, the Raman spectra demonstrates that the full width at half maximum of υ 1 (A g) vibration mode can exhibit significant correlation with the quality factor (Q × f). To further support the experimental study, we have also conducted the first-principle calculation of electron density difference via CASTEP package, which further confirms the change of temperature coefficient of resonance frequency (τ f). Our newly designed ZnNb 2 O 6 ceramics doped with 1 mol% ZnO exhibit excellent dielectric properties, i.e., ε r = 23.74, Q × f = 102,824 GHz and τ f = −55.38 ppm/°C, which demonstrates great potential to construct miniaturized 5G base station with advanced ceramic dielectrics. [ABSTRACT FROM AUTHOR]

Due to its superior reliability and performance, thick film technology is extensively employed in various applications, including automotive electronics, consumer electronics, communication engineering, and aerospace. However, a challenge arises from the mutual diffusion during the electronic paste production process, which leads to a decline in insulation performance and hinders the production of three-dimensional equipment. Inspired by the principles of low-temperature co-fired ceramic technology, a multi-layered ceramic structure has been successfully bonded using thick film technology by introducing a borosilicate glass-ceramics layer. To further enhance the properties of this multi-layered ceramic structure, approximately 8 wt% SiO 2 was incorporated into the borosilicate glass-ceramics. This addition effectively inhibits silver diffusion and reduces the diffusion depth within the glass-ceramic film. The key mechanisms behind this improvement are the increased activation energy for crystallization, resulting in a slower crystallization rate due to the addition of SiO 2. Moreover, the multi-layered ceramic with a sandwich structure exhibits remarkable properties. Notably, the dielectric strength of this system has been significantly enhanced to 13.9 kV/mm, accompanied by a high adhesion strength of 790 N. These enhanced properties of the optimized system indicate promising characteristics for multi-layer circuit applications. [ABSTRACT FROM AUTHOR]

We have optimized a CuO-doped silver paste to significantly improve the adhesion strength of silver thick film on AlN ceramic substrate, which can be widely applied in power electronic packaging applications. Via a combination of scanning electron microscope and X-ray diffraction, we have systematically studied the silver layer morphology on top of AlN ceramic substrate, and the interphases between the silver thick film and AlN substrate. Due to the CuAl 2 O 4 intermediate formed at the silver layer/AlN interface, the adhesion strength of silver thick film can be greatly improved. Particularly, the silver paste with 3 wt% nano-CuO sintered on AlN ceramic substrate exhibits high adhesion strength of 15.3 MPa with good electrical conductivity of 0.9 mΩ/□. [ABSTRACT FROM AUTHOR]

Ceramics joining has been widely applied in MEMS sensors, microwave and imaging devices as well as other ceramic packaging applications to fabricate multifunctional ceramic components. In this study, a glass frit with gradient thermal expansion coefficient (TEC) has been applied as the bonding material to join the ceramic of Al 2 O 3 and AlN. This glass frit consists of two types of glasses with different TEC. The Al 2 O 3 and AlN ceramics have been successfully joined with this glass frit in muffle furnace at 850 °C for 1 h. The bonding strength of Al 2 O 3 /AlN ceramic joined via this glass frit exceeds 40 MPa without any cracks in the joining interface, which is much superior compared with that of conventional glass frit bonding. Our work demonstrates that the gradient-TEC glass frit bonding is an effective method to join different types of ceramics. [ABSTRACT FROM AUTHOR]

PbO–ZnO–B 2 O 3 (PZB) glass with low-melting temperature has been widely applied in microelectromechanical systems (MEMS) packaging. However, the high thermal expansion coefficient (TEC) of PZB glass usually leads to strict packaging requirements. Here, in order to achieve ideal TEC, we have introduced β -eucryptite into PZB/ β -eucryptite composite glass and optimized the composite fabrication process. Firstly, PbO:ZnO:B 2 O 3 in mol ratio of 65:15:20 was selected as glass matrix owing to its low-melting temperature and good wettability. Then, β -eucryptite ceramics with ultra-low TEC were synthesized via a facile solid-state reaction method to optimize subsequent composite TEC value. The combination of corresponding material and device characterizations suggest that the pure phase and regular columnar grains of β -eucryptite ceramic can be obtained by sintering at 1450 °C for three hours, which can result in the lowest negative TEC of α 30-300°C = −10.74 × 10−6 K−1. Furthermore, regarding the PZB/ β -eucryptite composite glasses, systematic experiments demonstrated that the β -eucryptite introduction can greatly impact the TEC of matrix glass with only negligible effect on the softening point (T s). Importantly, composite glasses with TEC of α 30-300°C = 3.26 × 10−6 K−1, T s = 380 °C and wetting angle < 30° are ideal for MEMS packaging. This work implements optimized fabrication process to obtain low-melting PZB/ β -eucryptite composite glasses with ideal TEC values, which can be envisaged to be applied in advanced MEMS packaging applications. [ABSTRACT FROM AUTHOR]

The influence of BaO content (up to 15 mol%) on the crystallization behaviour, structure, thermal properties and microwave dielectric properties of the BaO-CaO-B 2 O 3 -SiO 2 glasses and glass-ceramics system was investigated. The glasses were produced by melting at 1400 °C and quenching into water, and the glass-ceramics were produced via heat treatment at temperatures between 750 and 800 °C. The results of X-ray diffraction analysis showed that increasing the BaO content raised the resistance of the glass against crystallization and favoured the transformation of β-CaSiO 3 and α-CaSiO 3 phases, which crystallized in the Ba-free and in low BaO content compositions, into SiO 2 and Ba 4 Si 6 O 16 , which crystallized in compositions with higher concentrations of BaO. The BaO content had little influence on the glass transition temperature ( T g ) and the linear coefficient of thermal expansion (CTE), but strongly reduced the softening point ( T s ). Even the addition of BaO as minor additives resulted in a dramatic reduction of the T s ; for example, the T s decreased from 902 °C for the Ba-free composition to 682 °C for the BaO-containing one (5%). Low values of the dielectric constant (5.9 ≤  ε r ≤ 6.63) and dielectric loss (1.12 × 10 −3 ≤ tan δ  ≤ 3.15 × 10 −3 ) were measured. [ABSTRACT FROM AUTHOR]

A novel method for preparing aluminum/aluminum nitride ceramics (Al/AlN) substrates is proposed in this paper. The method included two processes: (1) the surface of AlN was coated with a CuO thick film and sintered; (2) Al foil was put on the pretreated (in process 1) AlN surface and bonded to AlN through pre-heating at 400 °C and final heating at 660 °C in N 2 -H 2 reduction atmosphere. The experimental results obtained by optical and scanning electron microscope (SEM) observations as well as by X-ray diffraction analysis at the cross-sections of the joints and the fracture surfaces, suggest that the reaction mechanism starts with the reaction of CuO with AlN to form CuAlO 2 , when the AlN coated with CuO is heat-treated at high temperature. A Cu layer is produced by the reduction of CuO and Cu diffuses in the Al foil, forming strong Al/AlN joints. Elongated crystals of Al 2 Cu are developed in the reaction zone at the interface between Al and AlN. The results of mechanical tests showed that the peeling-off strength of the Al foil from the surface of the AlN substrate reached a value of 15.4 MPa for the Al/AlN couples produced after 30 min of heat treatment at 660 °C. [ABSTRACT FROM AUTHOR]

Perovskite ceramics with a formula of Ca 0.7 Ti 0.7 La 0.3 Al 0.3 O 3 (CTLA) were produced through a conventional solid-state reaction procedure following three different La 3+ -doping methods using powders of La 2 O 3 , or La 2 O 3 /Al 2 O 3 powder mixture, or LaAlO 3 . La 3+ doping favored grain growth and densification, affected the grain size distribution, and improved the dielectric properties of the produced sintered CTLA ceramics. The doping methods had a strong influence on these properties. More specifically, doping with La 2 O 3 and La 2 O 3 /Al 2 O 3 resulted in formation of solid solution, while a secondary phase formed in the CTLA ceramics doped with LaAlO 3 , which caused a coarsening of the microstructure and lowered the La 3+ doping effects on the dielectric properties. The experimental results suggest that La 3+ doping improves the dielectric properties of the sintered CTLA perovskite ceramics, which are further enhanced by doping with Al 3+ ions in small amounts. However, further increase of Al 3+ ions content jeopardizes them. [ABSTRACT FROM AUTHOR]

Ca 0.66 Ti 0.66 Sm 0.34 Al 0.34 O 3 (CTSA) ceramics were produced using a solid-state reaction method, and their sintering behavior, microwave dielectric properties, and microstructure were investigated. Sintering temperature affected the unit cell volume and the lattice parameters of the CTSA ceramics as well as the grain size distribution, the Gibbs free energy, the thermal expansion coefficient (CTE), and the dielectric properties (ε r , Q×f, τ f ). The samples sintered at 1500 °C displayed the best dielectric constant and Q×f, as 42.49 and 46069.86 GHz, respectively. [ABSTRACT FROM AUTHOR]

BaO-Sm 2 O 3 -5TiO 2 (BST5) ceramics with NdAlO 3 additions of up to 15 wt% were produced with a solid state reaction method, and their structural and microwave dielectric properties were determined. Experimental results showed that NdAlO 3 neither merged nor altered the orthorhombic tungsten bronze structure of the main phase of the produced ceramics (except for a shrinkage in the crystal lattice), but it was segregated in distinct grains in the microstructure of the produced ceramics. However, the amount of NdAlO 3 strongly influenced the densification and the microstructure (i.e. grain shape and size) of the produced ceramics. Analysis of the experimental results suggests that the microstructural features can be correlated to the dielectric properties of these ceramics. Accordingly, the dielectric constant (ε r ) and the temperature coefficient of resonant frequency (τ f ) of the produced BLT5 ceramics can be tuned with the amount of NdAlO 3 additions and the sintering process parameters. The best dielectric properties were achieved for BaO-Sm 2 O 3 -5TiO 2 ceramics with 7.5% NdAlO 3 (ε r =73.22, Q×f =10,300 GHz, and τ f =−1.05 ppm/°C). [ABSTRACT FROM AUTHOR]

Surface metallization of aluminum nitride is performed by a reactively thick film method. A layer of copper film is deposited on the surface of AlN ceramics. The morphology and composition of the metalized copper layer on ceramic substrate were investigated via scanning electron microscope (SEM) and X-ray diffraction (XRD). The interface layer between copper film and AlN substrate was examined through SEM, XRD and EDS. Reaction phases, Cu 2 O and intermediate phases (CuAlO 2 and CuAl 2 O 4 ), were detected at the interface layer. Subsequently, the formation process of these phases at the interface layer was discussed. And consequently, the relation within reaction phases and bonding strength was observed. Reaction phases play a key role in increasing bonding strength. The effect of these phases such as Cu 2 O and intermediate phases (CuAlO 2 and CuAl 2 O 4 ) on the mechanical property was discussed. Results show that the presence of Cu 2 O particles are detrimental to bonding strength. However, spinel CuAl 2 O 4 and isolated CuAlO 2 laminates at the interface layer can increase the bonding strength. The experimental results suggest that this thick film method is a useful technology for various metal-ceramics bonding. [ABSTRACT FROM AUTHOR]

For new-generation miniaturized and high-frequency electronics, it is of vital importance to develop advanced electronic packaging materials, which combine high electromagnetic interference (EMI) shielding effectiveness (SE) and efficient thermal management capabilities, including heat absorption, thermal conductivity (TC) and heat dissipation. However, high EMI SE and efficient thermal management usually cannot complement each other for the same packaging material, because EMI shielding devices convert electromagnetic radiation directly into heat consumption, leading to consequent severe challenge to dispose heat dissipation. Herein, we have newly developed a high-performance phase change composites, in which MXene is confined in shape-stabilized phase change material (PCM) for simultaneous achievement of high EMI SE and efficient thermal management. Regarding high EMI, MXene can effectively shield electromagnetic radiation by converting the radiation into heat consumption. As for thermal management, PCM enables efficient heat absorption via the phase change process, and MXene enhances the thermal conductivity (TC) of MXene/PCM composite to facilitate heat dissipation. As a result, our developed MXene/PCM composite can achieve a high EMI SE of 64.7 dB in X-band, with an improved TC of 0.74 W/m·K. Furthermore, the interlayer capillary effect of MXene inhibits the leakage of liquid PCM during the solid-liquid phase transition, which can maintain the PCM shape stability. Our newly-designed shape-stabilized MXene/PCM composites with high EMI SE and large TC shed new light on designing EMI shielding materials with prolonged exposure to electromagnetic radiation, which can be envisioned to exhibit vast implications for advanced new-generation miniaturized and high-frequency electronics. [Display omitted] [ABSTRACT FROM AUTHOR]

The strong covalent bonding of SiC makes it difficult to be fully sintered using conventional sintering techniques. Therefore, electrical current-assisted sintering techniques such as spark plasma sintering are needed to sinter SiC. The finite numerical simulations have been generally used to predict and guide sintering processes of ceramics (i.e.TiC,AlO 3). In this work, the numerical simulations of the temperature distribution, electrical field and thermal field on the porous SiC cylindrical samples by Comsol were investigated in details. The influence of porosity on the temperature distribution and electrical field distribution of the SiC samples were analyzed. Both the maximum current density (1.19 × 107A/m2) and the maximum temperature (2030 °C) of the SPS device occurred at the punch/spacer interface. The temperature values at the centre of the samples were proportional to the porosity, and the temperatures at the center of the samples increased from ∼1960 °C to ∼2010 °C at t = 2000s, with the porosity increasing from 1% to 60%. The uniformity of the temperature distribution deteriorated as the porosity increases, and the temperature gradients between the center and edge of the samples with the porosity of 1% and 60%, were ∼80 °C and ∼130 °C at t = 2000s, respectively. [ABSTRACT FROM AUTHOR]

BaO-Sm 2 O 3 –5TiO 2 (BST) added by Al 2 O 3 was prepared by solid-state reaction method. The main phase is Ba 3.99 Sm 9.34 Ti 18 O 54 of orthorhombic tungsten bronze structure, and the secondary phase is Ba 1.18 Al 1.90 Ti 6.09 O 16 of tetragonal structure, which has two types of grains: one is grey and cubic, and the other is white and quasi-rectangular. Microstructure was characterized by XRD, SEM, and Raman spectra. Micromechanical properties of different phases were assessed by nanoindentation and micro-scratch tests with Berkovich indenter. Volume fractions of different phases obtained by statistical analysis of grid indentation are in good agreement with those obtained by XRD analysis. Vickers hardness method is more appropriate for the determination of the fracture toughness of dielectric ceramics. BST ceramic without addition of Al 2 O 3 has better mechanical properties than BST-A with addition of Al 2 O 3 , indicating that addition of Al 2 O 3 impairs the micromechanical properties of dielectric ceramics. [ABSTRACT FROM AUTHOR]

We developed a newly-designed TiN/AgCuTi composite brazing alloy to significantly improve the bonding strength of AlN/Cu composite ceramics, which can endow high power electronic devices with superior compatibility with large current transport and high voltage resistance. Via the systematic microstructure investigation of the brazed joint by scanning electron microscopy and X-ray diffractometer, we found that added TiN particles could decrease the thickness of brittle reaction layer and promote the formation of fine TiCu particles in brazed joint, leading to dispersion strengthened and decreased CTE mismatch of the ceramic/metal composite. Importantly, the maximum bonding strength of 131 MPa was obtained for AlN and copper foil brazed joining via composite filler with TiN(4 wt.%)/AgCuTi, which is approximately 150 % higher than the case without TiN addition. [ABSTRACT FROM AUTHOR]

This paper presents that polyethylene glycol (PEG) synthesizes a form-stable phase change material (FS-PCM) with high thermal conductivity and considerable heat storage density. PEG was confined to the chain structure of epoxy resin (EP) via high-temperature melt blending and curing, which solves the leakage problem of PCMs during phase transformation. In order to increase the thermal conductivity and stability of the PEG/EP while maintaining good heat storage capacity and insulation ability, a low loading of reticulated porous Al 2 O 3 ceramic (RPC) was introduced into the PEG/EP matrix. RPC increases the thermal conductivity of FS-PCM by 5.5 times and the heat storage rate by 4 times. In addition, FS-PCM filled with 13.8 vol% RPCs has a coefficient of thermal expansion (CTE) of 80 ppm/K at 85–150 °C -a decrease of 62% over the matrix. Furthermore, the BN network is formed on RPC by vacuum impregnation technology, which further improves the thermal conductivity. This novel FS-PCM has excellent comprehensive properties and does not need for case package, indicating great prospects in thermal management and thermal storage. [ABSTRACT FROM AUTHOR]

The high integration density of microelectronic devices leads to local heat accumulation, and effective heat dissipation and signal transmission of packaging materials have become the primary issues to be solved. However, existing polymer materials have difficulty meeting the requirements due to their unsatisfactory thermal conductivity and thermal expansion properties. In this work, we proposed the use of digital light processing (DLP) printing technology to construct a triply periodic minimum surface (TPMS) skeleton, and a continuous and efficient heat conduction path was successfully constructed in epoxy resin by impregnating h-BN on the skeleton surface. When the loading of h-BN was 20 vol%, the thermal conductivity of the TPMS(SiO 2)@BN/EP(BN) composites was 1.86 W/(m·K), which was 786 % higher than that of pure epoxy resin. In addition, the thermal expansion coefficient of the composites decreased by more than 70 %. At the test frequencies of 3∼10 MHz, the composites showed stable dielectric properties, and the dielectric constant was always maintained in a low range, between 3.85 and 4.15. This work has realized the transformation of the method for constructing a heat conduction path from disordered to ordered and from random to repeatable. This provides a new strategy for the selection of microelectronic packaging materials. [ABSTRACT FROM AUTHOR]

In this study, hydrogen was determined in the ER5183 wires for MIG welding, and the effect of hydrogen in the wires on the tensile strength as well as the fracture behavior of Al–Mg MIG weld were investigated in order to clarify the affecting mechanism by hydrogen, which provided a reasonable range of hydrogen content in ER5183 welding wires. The results showed that, with the increasing hydrogen content, the tensile strength of the corresponding welds decreased accordingly. During the fracture process of the weld, hydrogen played serious roles as follows, accelerating the fracture process, promoting the formation of pores and causing the decohesion of the inclusion and matrix. By the mechanisms mentioned above, hydrogen changed the feature of fracture morphology from dimples to various defects. Considering the high tensile strength as well as the fine microstructure of the welds, the hydrogen content of the ER5183 welding wires should be controlled below 0.18 μg/g. • Determining the hydrogen content in the ER5183 welding wires for MIG welding. • Investigating the effect of hydrogen content on the tensile strength as well as the fracture behavior of Al–Mg MIG weld. • Finding the decohesion phenomenon, crack and porosity in the weld microstructure. • Giving a reasonable range of hydrogen content in ER5183 aluminum welding wire. [ABSTRACT FROM AUTHOR]

Phosphor layer are essential in the application of phosphor-converted white light emitting diodes (pc-WLEDs). However, the conventional structure of red–green–blue (RGB) phosphor layers can cause severe re-absorption of blue light, resulting in low luminous efficiency and colour rendering index (CRI). In this paper, we fabricated a new WLEDs phosphor layer, which consisted of patterned RGB phosphor pixel arrays in a planar configuration, by the stencil printing technique. Optical simulation based on Monte-Carlo theory has been applied to assist designing the optimal pattern of the phosphor pixel arrays. By tuning the layout of the pixel arrays and the size of phosphor pixels, we achieved uniform output white light with high luminous intensity of 1.47 × 109 cd and CRI of 95.6, which are superior compared with the intensity of 1.11 × 109 cd and CRI of 93.5 obtained from WLEDs with conventional dispensing phosphor layer. Our newly-designed phosphor pixel-array layer possesses great potential for applications in advanced lighting and display devices with vast implications for industrial improvement in these research areas. [ABSTRACT FROM AUTHOR]

As a light-weighting structural material, aluminum alloy is being applied in the automobile and high-speed train, the property of which however is affected by the content of hydrogen, and much importance has been attached to the impact property of aluminum alloy. In this study, hydrogen was determined in ER5183 welding wire and afterwards the effect of hydrogen content on the impact property of Al–Mg MIG weld is investigated to clarify the mechanism of hydrogen action which provided a reasonable control range of hydrogen content in aluminum welding wire. The results show that the impact toughness of the weld is decreased with the increasing hydrogen content. In addition, the decohesion of impurities from the matrix and the formation of porosity are also observed in the weld. The morphology of impact fracture appears facet and porosity due to the "hydrogen-enhanced localized plasticity" effect on plasticity. Considering the good impact property as well as the fine microstructure of the weld, hydrogen content of the ER5183 welding wires should be controlled below 0.18 μg/g. • Introducing hydrogen by using ER5183 welding wires into Al–Mg weld. • Studying the effect of hydrogen embrittlement on impact properties of Al–Mg weld. • Investigating the influence of hydrogen on morphology of impact fracture of Al–Mg weld. • Describing the hydrogen-induced dislocation motion and multiplication phenomenon. • Giving a reasonable range of hydrogen content in ER5183 aluminum welding wire. [ABSTRACT FROM AUTHOR]

A new composite structure (glass fiber assembly-filled honeycomb sandwich panel) is prepared in order to improve the acoustic properties. Effect of glass fiber assembly with different filling shapes (random and fiber ball), fiber diameter, fiber content and air-layer on acoustic properties are explored. Sound absorption coefficient (SAC) and sound transmission loss (STL) are determined by a B&K impedance tube. The experiment results indicate that the first resonance frequency of SAC disappears along with the improvement of the second resonance frequency by reducing the fiber diameter or increasing the fiber content. STL can be improved by the increase of the fiber content. Random glass fiber assembly with the fine fibers has the best STL in the all testing samples. The advantage of glass fiber assembly for improving the STL of honeycomb sandwich panel is particularly clear at frequencies below 4.5 kHz. Especially, the STL difference reaches the maximum at around 20 dB at frequencies below 3.0 kHz. [ABSTRACT FROM AUTHOR]