123 results on '"Amblard, Gilles R."'
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2. Light-curable underlayers for non-baking process in EUV lithography
3. Disruptive non-fluorinated photoacid generators using computational chemistry and library design
4. Filtration study with nylon membrane for metal removal performance improvement
5. Impact of increasing EUV absorption of CAR polymers on lithographic performance
6. Understanding the stability of advanced inorganic-organic hybrid thin films for advanced resist applications
7. Advanced EUV CAR small molecule compounds design and its impact to etch performance
8. Sensitivity improvement of fluoroalkylated EUV resist with electron-rich vinyl units
9. Understanding and improving performance of 14-nm HP EUV lithography via rational design of materials
10. Identifying trends in photoresist polymer properties to improve line and space defects
11. Metal infiltration into chemically amplified resists to improve pattern fidelity
12. Roughness improvement by post-development treatment of CAR for high-NA EUV lithography
13. New PE filter for advanced photolithography process
14. Prediction of lithographic performance upon the adjustment of EUV photoresist components by advanced contrast curve analysis
15. Negative tone i-line photoresist with controlled undercut profile designed for metal deposition to form metal interconnects
16. Advanced pattern selection and coverage check for computational lithography
17. Resist develop optimize to improve CDU and reduce process defect
18. Updated UPE filter design for point-of-use EUV CAR photoresist filtration for defect improvement
19. An update on the improvement in optimization of point-of-use filtration of metal oxide photoresists
20. Study of acicular defects in the post-exposure bake process airborne molecular contamination
21. PFAS-free I-line strong photoacid generator for positive-tone and negative-tone thick-film photoresists
22. Metal removal technology and pretreatment method of ion exchange resin
23. Principal components and optimal feature vectors of EUVL stochastic variability: applications of Karhunen-Loève expansion to efficient estimation of stochastic failure probabilities and stochastic metrics
24. Advanced simulations using an improved metal oxide photoresist model
25. Acid generation efficiency prediction by bond cleavage calculation of EUV photoacid generators
26. Development of wafer edge protection layer for advanced patterning process
27. Mitigation of EUV photoresist pattern deformation by wafer backside cleaning techniques
28. Performance comparison of photosensitive polyimides for high-resolution dual-damascene schemes for FOWLP packaging applications
29. Recent progress of EUV CAR-NTD with new developer for chemical stochastic defect reduction
30. Patterning optimization for single mask bit-line-periphery and storage-node-landing-pad DRAM layers using 0.33NA EUV lithography at the resolution limit
31. Sub-20nm tip-to-tip enabled by anti-spacer patterning
32. EUV lithography patterning using multi-trigger resist
33. Indium nitrate hydrate resist characteristics evaluated by low-energy electron beam exposure
34. Development of high contrast EUV photoresist for narrow pitch C/H patterning
35. Nanoimprint lithography using novel optical materials for AR|MR devices
36. Main chain scission resists towards high-NA EUV lithography
37. Use of molecular design and synthesis to improve polymeric holographic photopolymer materials
38. Practical considerations for large-area nanoimprinted augmented reality waveguides
39. Designing EUV negative tone resist and underlayer approaches exhibiting 14nm half-pitch resolution
40. Amorphous zinc-imidazolate all-dry resists
41. Positive-tone, dry-develop poly(aldehyde) photoresist
42. Dissolution dynamics of copolymer of poly(4-hydroxystyrene-co-methacrylic acid) in tetraalkylammonium hydroxide aqueous solutions
43. PFAS in semiconductor photolithography: a mass balance model
44. Novel polymer design for ultra-low stress material for advanced packaging applications
45. Defectivity reduction in EUV resists through novel high-performance Point-Of-Use (POU) filters
46. Predicting the critical features of the chemically-amplified resist profile based on machine learning
47. Dissociative photoionization of EUV lithography photoresist models
48. Spin speed impact on photoresist thin film properties and EUV lithographic performance
49. Use of highly EUV absorbing element in chemically amplified resist
50. Considerations in the design of photoacid generators
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