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We present measurements of interfacial Gilbert damping due to the spin pumping effect in Ni 81 Fe 19 / W heterostructures. Measurements were compared for heterostructures in which the crystallographic phase of W, either α (bcc)-W or β (A15)-W, was enriched through deposition conditions and characterized using X-ray diffraction and high-resolution cross-sectional transmission electron microscopy. Single-phase Ni 81 Fe 19 / α -W heterostructures could be realized, but heterostructures with β -W were realized as a mixed α - β phase. The spin mixing conductances for W at interfaces with Ni 81 Fe 19 were found to be significantly lower than those for similar heavy metals such as Pd and Pt, but comparable to those for Ta, and independent of enrichment in the β phase. [ABSTRACT FROM AUTHOR]

The discovery of superconductivity in twisted bilayer and trilayer graphene 1-5 has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations 6 . Flat bands can also be induced by moiré patterns in lattice-mismatched and/or twisted heterostructures of other two-dimensional materials, such as transition metal dichalcogenides (TMDs) 7,8 . Although a wide range of correlated phenomena have indeed been observed in moiré TMDs 9-19 , robust demonstration of superconductivity has remained absent 9 . Here we report superconductivity in 5.0° twisted bilayer WSe 2 with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with a Fermi surface reconstruction believed to arise from AFM order 20 . A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin fluctuation-mediated superconductivity 21 . Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among TMDs, such as a native band gap, large spin-orbit coupling, spin-valley locking and magnetism, offer the possibility of accessing a broader superconducting parameter space than graphene-only structures., Competing Interests: Competing interests: The authors declare no competing interests., (© 2025. The Author(s).)

Point defects are thermodynamically stabilized in all crystalline materials, with increased densities negatively impacting the properties and performance of transition metal dichalcogenides (TMDs). While recent point defect reduction methods have led to considerable improvements in the optoelectronic properties of TMDs, there is a clear need for theoretical work to establish the lower limit of defect densities, as represented by thermal equilibrium. To that end, an ab initio and thermodynamic analysis of the equilibrium densities of intrinsic point defects in MoSe2 and WSe2 is presented. The intrinsic defect formation energies at the limits of the selenium and metal-rich regimes are determined by density functional theory (DFT) and then augmented with elemental chemical potential functions to determine temperature- and pressure-dependent formation energies. Equilibrium defect densities are determined for MSe, SeM, vM, and vSe, where M and v, respectively, represent the metal and the vacancy, as a function of synthesis temperature and pressure. The effects of vibrational free energy contributions and treatment of the DFT exchange-correlation potential are found to be non-negligible. Calculated equilibrium densities are several orders of magnitude below reported defect densities in TMDs made by chemical vapor deposition, chemical vapor transport, and flux methods, thereby establishing that current synthesis methods are either kinetically limited or impurity dominated., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

Establishing reliable electrical contacts to atomically thin materials is a prerequisite for both fundamental studies and applications yet remains a challenge. In particular, the development of contact techniques for air-sensitive monolayers has lagged behind, despite their unique properties and significant potential for applications. Here, we present a robust method to create contacts to device layers encapsulated within hexagonal boron nitride (hBN). This method uses plasma etching and metal deposition to create 'vias' in the hBN with graphene forming an atomically thin etch-stop. The resulting partially fluorinated graphene (PFG) protects the underlying device layer from air-induced degradation and damage during metal deposition. PFG is resistive in-plane but maintains high out-of-plane conductivity. The work function of the PFG/metal contact is tunable through the degree of fluorination, offering opportunities for contact engineering. Using the in situ via technique, we achieve ambipolar contact to air-sensitive monolayer 2H-molybdenum ditelluride (MoTe 2 ) with more than 1 order of magnitude improvement in on-current density compared to previous literature. The complete encapsulation provides high reproducibility and long-term stability. The technique can be extended to other air-sensitive materials as well as air-stable materials, offering highly competitive device performance.

Two-dimensional semiconductors, such as transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for two-dimensional semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure the magnetotransport properties of high-purity monolayer WSe 2 . We measure a record-high hole mobility of 80,000 cm 2  V -1  s -1 and access channel carrier densities as low as 1.6 × 10 11  cm -2 , an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurements of correlation-driven quantum phases including the observation of a low-temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected and the observation of the fractional quantum Hall effect under large magnetic fields. The charge-transfer contact scheme enables the discovery and manipulation of new quantum phenomena in two-dimensional semiconductors and their heterostructures., (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)

Chemical vapour deposition (CVD) synthesis of graphene on copper has been broadly adopted since the first demonstration of this process 1 . However, widespread use of CVD-grown graphene for basic science and applications has been hindered by challenges with reproducibility 2 and quality 3 . Here we identify trace oxygen as a key factor determining the growth trajectory and quality for graphene grown by low-pressure CVD. Oxygen-free chemical vapour deposition (OF-CVD) synthesis is fast and highly reproducible, with kinetics that can be described by a compact model, whereas adding trace oxygen leads to suppressed nucleation and slower/incomplete growth. Oxygen affects graphene quality as assessed by surface contamination, emergence of the Raman D peak and decrease in electrical conductivity. Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak. After dry transfer and boron nitride encapsulation, it shows room-temperature electrical-transport behaviour close to that of exfoliated graphene. A graphite-gated device shows well-developed integer and fractional quantum Hall effects. By highlighting the importance of eliminating trace oxygen, this work provides guidance for future CVD system design and operation. The increased reproducibility and quality afforded by OF-CVD synthesis will broadly influence basic research and applications of graphene., (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)

This work outlines conditions suitable for the heteroepitaxial growth of Cr2O3(0001) films (1.5-20 nm thick) on a Ru(0001)-terminated substrate. Optimized growth is achieved by sputter deposition of Cr within a 4 mTorr Ar/O2 20% ambient at Ru temperatures ranging from 450 to 600 °C. The Cr2O3 film adopts a 30° rotated honeycomb configuration with respect to the underlying Ru(0001) substrate and exhibits a hexagonal lattice parameter consistent with that for bulk Cr2O3(0001). Heating to 700 °C within the same environment during film preparation leads to Ru oxidation. Exposure to temperatures at or above 400 °C in a vacuum, Ar, or Ar/H2 3% leads to chromia film degradation characterized by increased Ru 3d XPS intensity coupled with concomitant Cr 2p and O 1s peak attenuations when compared to data collected from unannealed films. An ill-defined but hexagonally well-ordered RuxCryOz surface structure is noted after heating the film in this manner. Heating within a wet Ar/H2 3% environment preserves the Cr2O3(0001)/Ru(0001) heterolayer structure to temperatures of at least 950 °C. Heating an Ru-Cr2O3-Ru heterostacked film to 950 °C within this environment is shown by cross-sectional scanning/transmission electron microscopy (S/TEM) to provide clear evidence of retained epitaxial bicrystalline oxide interlayer structure, interlayer immiscibility, and epitaxial registry between the top and bottom Ru layers. Subtle effects marked by O enrichment and O 1s and Cr 2p shifts to increased binding energies are noted by XPS in the near-Ru regions of Cr2O3(0001)/Ru(0001) and Ru(0001)/Cr2O3(0001)/Ru(0001) films after annealing to different temperatures in different sets of environmental conditions., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

Atomic defects in two-dimensional (2D) materials impact electronic and optoelectronic properties, such as doping and single photon emission. An understanding of defect-property relationships is essential for optimizing material performance. However, progress in understanding these critical relationships is hindered by a lack of straightforward approaches for accurate, precise, and reliable defect quantification on the nanoscale, especially for insulating materials. Here, we demonstrate that lateral force microscopy (LFM), a mechanical technique, can observe atomic defects in semiconducting and insulating 2D materials under ambient conditions. We first improve the sensitivity of LFM through consideration of cantilever mechanics. With the improved sensitivity, we use LFM to locate atomic-scale point defects on the surface of bulk MoSe 2 . By directly comparing LFM and conductive atomic force microscopy (CAFM) measurements on bulk MoSe 2 , we demonstrate that point defects observed with LFM are atomic defects in the crystal. As a mechanical technique, LFM does not require a conductive pathway, which allows defect characterization on insulating materials, such as hexagonal boron nitride (hBN). We demonstrate the ability to observe intrinsic defects in hBN and defects introduced by annealing. Our demonstration of LFM as a mechanical defect characterization technique applicable to both conductive and insulating 2D materials will enable routine defect-property determination and accelerate materials research.

Since the seminal work on MoS 2 , photoexcitation in atomically thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons, with binding energies order of magnitude larger than thermal energy at room temperature. Here, we reexamine this foundational assumption and show that photoexcitation of TMDC monolayers can result in a substantial population of free charges. Performing ultrafast terahertz spectroscopy on large-area, single-crystal TMDC monolayers, we find that up to ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunneling microscopy reveals that photocarrier generation is intimately related to mid-gap defects, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers, with mid-gap trap densities as low as 10 9 cm -2 , does intrinsic exciton physics start to dominate the terahertz response. Our findings reveal the necessity of knowing the defect density in understanding photophysics of TMDCs.

Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages. Here, we benchmark conductive atomic force microscopy (CAFM) by a direct comparison with STM in the characterization of transition metal dichalcogenides (TMDs). The results conclusively demonstrate that CAFM and STM image identical defects, giving results that are equivalent both qualitatively (defect appearance) and quantitatively (defect density). Further, we confirm that CAFM can achieve single-atom resolution, similar to that of STM, on both bulk and monolayer samples. The validation of CAFM as a facile and accurate tool for defect quantification provides a routine and reliable measurement that can complement other standard characterization techniques.

Quantification of microstructures is crucial for understanding processing-structure and structure-property relationships in polycrystalline materials. Delineating grain boundaries in bright-field transmission electron micrographs, however, is challenging due to complex diffraction contrast in images. Conventional edge detection algorithms are inadequate; instead, manual tracing is usually required. This study demonstrates the first successful machine learning approach for grain boundary detection in bright-field transmission electron micrographs. The proposed methodology uses a U-Net convolutional neural network trained on carefully constructed data from bright-field images and hand tracings available from prior studies, combined with targeted postprocessing algorithms to preserve fine features of interest. The image processing pipeline accurately estimates grain boundary positions, avoiding segmentation in regions with intragrain contrast and identifying low-contrast boundaries. Our approach is validated by directly comparing microstructural markers (i.e., grain centroids) identified in U-Net predictions with those identified in hand tracings; furthermore, the grain size distributions obtained from the two techniques show notable overlap when compared using t-test, Kolmogorov-Smirnov test, and Cramér-von Mises test. The technique is then successfully applied to interpret new microstructures having different image characteristics from the training data, with preliminary results from platinum and palladium microstructures presented, highlighting the versatility of our approach for grain boundary identification in bright-field micrographs., Competing Interests: Conflict of Interest The authors declare that they have no competing interest., (© The Author(s) 2023. Published by Oxford University Press on behalf of the Microscopy Society of America.)

Hexagonal boron nitride (hBN) hosts phonon polaritons (PhP), hybrid light-matter states that facilitate electromagnetic field confinement and exhibit long-range ballistic transport. Extracting the spatiotemporal dynamics of PhPs usually requires "tour de force" experimental methods such as ultrafast near-field infrared microscopy. Here, we leverage the remarkable environmental sensitivity of excitons in two-dimensional transition metal dichalcogenides to image PhP propagation in adjacent hBN slabs. Using ultrafast optical microscopy on monolayer WSe 2 /hBN heterostructures, we image propagating PhPs from 3.5 K to room temperature with subpicosecond and few-nanometer precision. Excitons in WSe 2 act as transducers between visible light pulses and infrared PhPs, enabling visible-light imaging of PhP transport with far-field microscopy. We also report evidence of excitons in WSe 2 copropagating with hBN PhPs over several micrometers. Our results provide new avenues for imaging polar excitations over a large frequency range with extreme spatiotemporal precision and new mechanisms to realize ballistic exciton transport at room temperature.

Two-dimensional transition-metal dichalcogenides (TMDs) have attracted tremendous interest due to the unusual electronic and optoelectronic properties of isolated monolayers and the ability to assemble diverse monolayers into complex heterostructures. To understand the intrinsic properties of TMDs and fully realize their potential in applications and fundamental studies, high-purity materials are required. Here, we describe the synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than those in TMDs grown by a single-step flux technique. For WSe 2 , we show that increasing the Se/W ratio during growth reduces point defect density, with crystals grown at 100:1 ratio achieving charged and isovalent defect densities below 10 10 and 10 11 cm -2 , respectively. Initial temperature-dependent electrical transport measurements of monolayer WSe 2 yield room-temperature hole mobility above 840 cm 2 /(V s) and low-temperature disorder-limited mobility above 44,000 cm 2 /(V s). Electrical transport measurements of graphene-WSe 2 heterostructures fabricated from the two-step flux grown WSe 2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states. Finally, we demonstrate that the two-step flux technique can be used to synthesize other TMDs with similar defect densities, including semiconducting 2H-MoSe 2 and 2H-MoTe 2 and semimetallic T d -WTe 2 and 1T'-MoTe 2 .

Single-crystal nanowires are of broad interest for applications in nanotechnology. However, such wires are subject to both the Rayleigh-Plateau instability and an ovulation process that are expected to lead to their break up into particle arrays. Single crystal Ru nanowires were fabricated with axes lying along different crystallographic orientations. Wires bound by equilibrium facets along their length did not break up through either a Rayleigh-Plateau or ovulation process, while wires with other orientations broke up through a combination of both. Mechanistic insight is provided using a level-set simulation that accounts for strongly anisotropic surface energies, providing a framework for design of morphologically stable nanostructures.

Confining particles to distances below their de Broglie wavelength discretizes their motional state. This fundamental effect is observed in many physical systems, ranging from electrons confined in atoms or quantum dots 1,2 to ultracold atoms trapped in optical tweezers 3,4 . In solid-state photonics, a long-standing goal has been to achieve fully tunable quantum confinement of optically active electron-hole pairs, known as excitons. To confine excitons, existing approaches mainly rely on material modulation 5 , which suffers from poor control over the energy and position of trapping potentials. This has severely impeded the engineering of large-scale quantum photonic systems. Here we demonstrate electrically controlled quantum confinement of neutral excitons in 2D semiconductors. By combining gate-defined in-plane electric fields with inherent interactions between excitons and free charges in a lateral p-i-n junction, we achieve exciton confinement below 10 nm. Quantization of excitonic motion manifests in the measured optical response as a ladder of discrete voltage-dependent states below the continuum. Furthermore, we observe that our confining potentials lead to a strong modification of the relative wave function of excitons. Our technique provides an experimental route towards creating scalable arrays of identical single-photon sources and has wide-ranging implications for realizing strongly correlated photonic phases 6,7 and on-chip optical quantum information processors 8,9 ., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

Exciton condensates (ECs) are macroscopic coherent states arising from condensation of electron-hole pairs 1 . Bilayer heterostructures, consisting of two-dimensional electron and hole layers separated by a tunnel barrier, provide a versatile platform to realize and study ECs 2-4 . The tunnel barrier suppresses recombination, yielding long-lived excitons 5-10 . However, this separation also reduces interlayer Coulomb interactions, limiting the exciton binding strength. Here, we report the observation of ECs in naturally occurring 2H-stacked bilayer WSe 2 . In this system, the intrinsic spin-valley structure suppresses interlayer tunnelling even when the separation is reduced to the atomic limit, providing access to a previously unattainable regime of strong interlayer coupling. Using capacitance spectroscopy, we investigate magneto-ECs, formed when partially filled Landau levels couple between the layers. We find that the strong-coupling ECs show dramatically different behaviour compared with previous reports, including an unanticipated variation of EC robustness with the orbital number, and find evidence for a transition between two types of low-energy charged excitations. Our results provide a demonstration of tuning EC properties by varying the constituent single-particle wavefunctions., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. We directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment. We thereby determined an intrinsic radiative lifetime of 0.40 nanoseconds for the lowest direct-gap interlayer exciton in a tungsten diselenide/molybdenum diselenide heterostructure. We found that differences in electric field and twist angle induced trends in exciton transition strengths and energies, which could be related to wave function overlap, moiré confinement, and atomic reconstruction. Through comparison with photoluminescence spectra, this study identifies a momentum-indirect emission mechanism. Characterization of the absorption is key for applications relying on light-matter interactions.

Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation 1-4 , single-photon emission and other quantum information applications 5-7 . Yet, despite extensive optical spectroscopic investigations 8-12 , critical information about their size, valley configuration and the influence of the moiré potential remains unknown. Here, in a WSe 2 /MoS 2 heterostructure, we captured images of the time-resolved and momentum-resolved distribution of both of the particles that bind to form the ILX: the electron and the hole. We thereby obtain a direct measurement of both the ILX diameter of around 5.2 nm, comparable with the moiré-unit-cell length of 6.1 nm, and the localization of its centre of mass. Surprisingly, this large ILX is found pinned to a region of only 1.8 nm diameter within the moiré cell, smaller than the size of the exciton itself. This high degree of localization of the ILX is backed by Bethe-Salpeter equation calculations and demonstrates that the ILX can be localized within small moiré unit cells. Unlike large moiré cells, these are uniform over large regions, allowing the formation of extended arrays of localized excitations for quantum technology., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

Trions, quasiparticles composed of an electron-hole pair bound to a second electron and/or hole, are many-body states with potential applications in optoelectronics. Trions in monolayer transition metal dichalcogenide (TMD) semiconductors have attracted recent interest due to their valley/spin polarization, strong binding energy, and tunability through external gate control. However, low materials quality ( i.e. , high defect density) has hindered efforts to understand the intrinsic properties of trions. The low photoluminescence (PL) quantum yield (QY) and short lifetime of trions have prevented harnessing them in device applications. Here, we study the behavior of trions in a series of MoSe 2 monolayers, with atomic defect density varying by over 2 orders of magnitude. The QY increases with decreasing defect density and approaches unity in the cleanest material. Simultaneous measurement of the PL lifetime yields both the intrinsic radiative lifetime and the defect-dependent nonradiative lifetime. The long lifetime of ∼230 ps of trions allows direct observation of their diffusion.

Crystalline two-dimensional (2D) superconductors (SCs) with low carrier density are an exciting new class of materials in which electrostatic gating can tune superconductivity, electronic interactions play a prominent role, and electrical transport properties may directly reflect the topology of the Fermi surface. Here, we report the dramatic enhancement of superconductivity with decreasing thickness in semimetallic T d -MoTe 2 ) increasing up to 7.6 K for monolayers, a 60-fold increase with respect to the bulk T c ) increasing up to 7.6 K for monolayers, a 60-fold increase with respect to the bulk T c . We show that monolayers possess a similar electronic structure and density of states (DOS) as the bulk, implying that electronic interactions play a strong role in the enhanced superconductivity. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage. The response to high in-plane magnetic fields is distinct from that of other 2D SCs and reflects the canted spin texture of the electron pockets.

Charge separated interlayer excitons in transition metal dichalcogenide heterobilayers are being explored for moiré exciton lattices and exciton condensates. The presence of permanent dipole moments and the poorly screened Coulomb interaction make many-body interactions particularly strong for interlayer excitons. Here we reveal two distinct phase transitions for interlayer excitons in the MoSe_{2}/WSe_{2} heterobilayer using time and spatially resolved photoluminescence imaging: from trapped excitons in the moiré potential to the modestly mobile exciton gas as exciton density increases to n_{ex}∼10^{11}  cm^{-2} and from the exciton gas to the highly mobile charge separated electron-hole plasma for n_{ex}>10^{12}  cm^{-2}. The latter is the Mott transition and is confirmed in photoconductivity measurements. These findings set fundamental limits for achieving quantum states of interlayer excitons.

The optical properties of particularly the tungsten-based transition-metal dichalcogenides are strongly influenced by the presence of dark excitons. Recently, theoretical predictions as well as indirect experimental insights have shown that two different dark excitons exist within the light cone. While one is completely dark, the other one is only dipole forbidden out-of-plane, hence referred to as grey exciton. Here, we present angle-resolved spectroscopic data of a high-quality hexagonal-BN-encapsulated WSe 2 monolayer with which we directly obtain the radiation pattern of this grey exciton that deviates from that of the bright exciton and other exciton complexes obtained at cryogenic temperatures.

The Hubbard model, formulated by physicist John Hubbard in the 1960s 1 , is a simple theoretical model of interacting quantum particles in a lattice. The model is thought to capture the essential physics of high-temperature superconductors, magnetic insulators and other complex quantum many-body ground states 2,3 . Although the Hubbard model provides a greatly simplified representation of most real materials, it is nevertheless difficult to solve accurately except in the one-dimensional case 2,3 . Therefore, the physical realization of the Hubbard model in two or three dimensions, which can act as an analogue quantum simulator (that is, it can mimic the model and simulate its phase diagram and dynamics 4,5 ), has a vital role in solving the strong-correlation puzzle, namely, revealing the physics of a large number of strongly interacting quantum particles. Here we obtain the phase diagram of the two-dimensional triangular-lattice Hubbard model by studying angle-aligned WSe 2 /WS 2 bilayers, which form moiré superlattices 6 because of the difference between the lattice constants of the two materials. We probe the charge and magnetic properties of the system by measuring the dependence of its optical response on an out-of-plane magnetic field and on the gate-tuned carrier density. At half-filling of the first hole moiré superlattice band, we observe a Mott insulating state with antiferromagnetic Curie-Weiss behaviour, as expected for a Hubbard model in the strong-interaction regime 2,3,7-9 . Above half-filling, our experiment suggests a possible quantum phase transition from an antiferromagnetic to a weak ferromagnetic state at filling factors near 0.6. Our results establish a new solid-state platform based on moiré superlattices that can be used to simulate problems in strong-correlation physics that are described by triangular-lattice Hubbard models.

Strong light-matter interactions based on two-dimensional excitons formed in quantum materials such as monolayer transition-metal dichalcogenides have become a major subject of research in recent years. Particularly attractive is the extraordinarily large oscillator strength as well as binding energy of the excitonic quasiparticles in these atomically-thin crystal lattices. Numerous theoretical studies and experiments have been devoted to the exploration of the excitonic systems that could be exploited in future nano-scaled optoelectronic devices. To obtain unique insight into the exciton's characteristics in an archetype monolayer quantum material, we directly measure the quasiparticle energy-momentum dispersion for the first time optically. Our results for h-BN encapsulated single-layer WSe 2 clearly indicate an emission regime with a dispersion in the meV range in within the light cone at cryogenic temperatures. The amount of dispersion agrees well with calculations for an exciton-polariton based on the material's monolayer exciton, or energetic modifications caused by exciton exchange interactions predicted for this material family. The measurable dispersion slightly weakens for elevated excitation densities, whereas at elevated temperatures, it even becomes immeasurable. The obtained reduction in dispersion is attributed to an enhanced role of uncorrelated charge carriers as well as the formation of phonon sidebands above 100 K.

We report light emission around 1 eV (1240 nm) from heterostructures of MoS_{2} and WSe_{2} transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our findings gain access to the interlayer physics of the intrinsically incommensurate MoS_{2}/WSe_{2} heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.

Solid-state single-quantum emitters are crucial resources for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level 1,2 . Monolayer WSe 2 , a transition metal dichalcogenide semiconductor, can host randomly located quantum emitters 3-6 , while nanobubbles 7 as well as lithographically defined arrays of pillars in contact with the transition metal dichalcogenide act as spatially controlled stressors 8,9 . The induced strain can then create excitons at defined locations. This ability to create zero-dimensional (0D) excitons anywhere within a 2D material is promising for the development of scalable quantum technologies, but so far lacks mature cavity integration and suffers from low emitter quantum yields. Here we demonstrate a deterministic approach to achieve Purcell enhancement at lithographically defined locations using the sharp corners of a metal nanocube for both electric field enhancement and to deform a 2D material. This nanoplasmonic platform allows the study of the same quantum emitter before and after coupling. For a 3 × 4 array of quantum emitters we show Purcell factors of up to 551 (average of 181), single-photon emission rates of up to 42 MHz and a narrow exciton linewidth as low as 55 μeV. Furthermore, the use of flux-grown WSe 2 increases the 0D exciton lifetimes to up to 14 ns and the cavity-enhanced quantum yields from an initial value of 1% to up to 65% (average 44%).

Atomically thin 2D materials span the common components of electronic circuits as metals, semiconductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multilayer heterostructures with robust electrical contacts while preventing disorder and degradation. In particular, preserving and studying air-sensitive 2D materials has presented a significant challenge since they readily oxidize under atmospheric conditions. We report a new technique for contacting 2D materials, in which metal via contacts are integrated into flakes of insulating hexagonal boron nitride, and then placed onto the desired conducting 2D layer, avoiding direct lithographic patterning onto the 2D conductor. The metal contacts are planar with the bottom surface of the boron nitride and form robust contacts to multiple 2D materials. These structures protect air-sensitive 2D materials for months with no degradation in performance. This via contact technique will provide the capability to produce "atomic printed circuit boards" that can form the basis of more complex multilayer heterostructures.

A galvanic-displacement-reaction-based, room-temperature "dip-and-dry" technique is demonstrated for fabricating selectively solar-absorbing plasmonic-nanoparticle-coated foils (PNFs). The technique, which allows for facile tuning of the PNFs' spectral reflectance to suit different radiative and thermal environments, yields PNFs which exhibit excellent, wide-angle solar absorptance (0.96 at 15°, to 0.97 at 35°, to 0.79 at 80°), and low hemispherical thermal emittance (0.10) without the aid of antireflection coatings. The thermal emittance is on par with those of notable selective solar absorbers (SSAs) in the literature, while the wide-angle solar absorptance surpasses those of previously reported SSAs with comparable optical selectivities. In addition, the PNFs show promising mechanical and thermal stabilities at temperatures of up to 200 °C. Along with the performance of the PNFs, the simplicity, inexpensiveness, and environmental friendliness of the "dip-and-dry" technique makes it an appealing alternative to current methods for fabricating selective solar absorbers., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

The enthalpy and activation energy for the transformation of the metastable form of tungsten, β-W, which has the topologically close-packed A15 structure (space group Pm3¯n), to equilibrium α-W, which is body-centered cubic (A2, space group Im3¯m), was measured using differential scanning calorimetry. The β-W films were 1 μm-thick and were prepared by sputter deposition in argon with a small amount of nitrogen. The transformation enthalpy was measured as -8.3 ± 0.4 kJ/mol (-86 ± 4 meV/atom) and the transformation activation energy as 2.2 ± 0.1 eV. The measured enthalpy was found to agree well with the difference in energies of α and β tungsten computed using density functional theory, which gave a value of -82 meV/atom for the transformation enthalpy. A calculated concerted transformation mechanism with a barrier of 0.4 eV/atom, in which all the atoms in an A15 unit cell transform into A2, was found to be inconsistent with the experimentally measured activation energy for any critical nucleus larger than two A2 unit cells. Larger calculations of eight A15 unit cells spontaneously relax to a mechanism in which part of the supercell first transforms from A15 to A2, creating a phase boundary, before the remaining A15 transforms into the A2 phase. Both calculations indicate that a nucleation and growth mechanism is favored over a concerted transformation. More consistent with the experimental activation energy was that of a calculated local transformation mechanism at the A15-A2 phase boundary, computed as 1.7 eV using molecular dynamics simulations. This calculated phase transformation mechanism involves collective rearrangements of W atoms in the disordered interface separating the A15 and A2 phases.