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43 results on '"Lee, Hyung-Ik"'

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5. Ultralow-dielectric-constant amorphous boron nitride

13. Ultralow-dielectric-constant amorphous boron nitride

18. High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

20. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

21. Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

24. Defect states in amorphous SiNx:H compounds using thermally stimulated exo-electron emission

27. Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

28. Effective work function engineering for a TiN/XO(X = La, Zr, Al)/SiO2 stack structures

29. Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

34. Direct band gap measurement of Cu(In,Ga)(Se,S)2 thin films using high-resolution reflection electron energy loss spectroscopy

36. Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates.

37. Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

38. Electronic structures of SiO2 thin films via Ar gas cluster ion beam sputtering.

39. Characteristics of ZrC Barrier Coating on SiC-Coated Carbon/Carbon Composite Developed by Thermal Spray Process.

40. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling.

42. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO 2 stack structure via work function depth profiling.

43. Chemically Homogeneous and Thermally Robust Ni 1-x Pt x Si Film Formed Under a Non-Equilibrium Melting/Quenching Condition.

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