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Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not belong in the topological universe because strong anisotropy imposes insurmountable energy barriers for topological excitations. Here we show that uniaxial ferroelectrics provide unique opportunity for the formation of topological polarization networks comprising branching intertwined domains with opposite counterflowing polarization. We report that they host the topological state of matter: a crisscrossing structure of topologically protected colliding head-to-head and tail-to-tail polarization domains, which for decades has been considered impossible from the electrostatic viewpoint. The domain wall interfacing the counterflowing domains is a multiconnected surface, propagating through the whole volume of the ferroelectric.

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task. The problem stems from the lack of understanding of how the fundamental origin of the NC due to the emergence of the domain state can be put in use for implementing the NC FET. Here we put forth an ingenious design for the ferroelectric domain-based field-effect transistor with the stable reversible static negative capacitance. Using dielectric coating of the ferroelectric capacitor enables the tunability of the negative capacitance improving tremendously the performance of the field-effect transistors.

Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic forces with specific geometry of the system enables producing the nanoscale domains by-design. Along with that, domain engineering requires mastery of underlying physical mechanisms that govern the domain formation. Here, we present a theoretical description of the domain formation by a scanning probe microscopy tip in a ferroelectric film with strong in-plane anisotropy of polarization. We demonstrate that local charge injection produces wedge-shaped domains that propagate along the anisotropy axis, whereas the tip-written lines of charge generate a comb-like domain structure. The results of our calculations agree with earlier experimental observations and allow for the optimization of the targeted domain structures., Comment: 5 pages, 3 figures

The structural, electronic and magnetic properties of Fe7S8 material have been studied within the framework of the ab-initio calculations, the mean field approximation (MFA) and Monte Carlo simulation (MCS). Our study shows that two forms of the iron atoms, Fe2+ with spin S=2, and Fe3+ with spin {\sigma}=5/2 are the most probable configurations. A mixed Ising model with ferromagnetic spin coupling between Fe2+ and Fe3+ ions and between Fe3+ and Fe3+ ions, and with antiferromagnetic spin coupling between Fe2+ ions of adjacent layers has been used to study the magnetic properties of this compound. We demonstrated that the magnetic phase transition can be either of the first or of the second order, depending on the value of the exchange interaction and crystal field. The presence of vacancies in every second iron layer leads to incomplete cancellation of magnetic moments, hence to the emergence of the ferrimagnetism. Anomalies in the magnetization behavior have been found and compared with the experimental results., Comment: 18 pages, 14 Figures, 4 Tables

Chirality, an intrinsic handedness, is one of the most intriguing fundamental phenomena in nature. Materials composed of chiral molecules find broad applications in areas ranging from nonlinear optics and spintronics to biology and pharmaceuticals. However, chirality is usually an invariable inherent property of a given material that cannot be easily changed at will. Here, we demonstrate that ferroelectric nanodots support skyrmions the chirality of which can be controlled and switched. We devise protocols for realizing control and efficient manipulations of the different types of skyrmions. Our findings open the route for controlled chirality with potential applications in ferroelectric-based information technologies.

Polarized Raman spectra of the epitaxial Ba0.5Sr0.5TiO3 film, bi-color BaTiO3/Ba0.5Sr0.5TiO3 superlattice, and tri-color BaTiO3/Ba0.5Sr0.5TiO3/SrTiO3 superlattice were studied in a broad temperature range of 80-700 K. Based on the temperature dependence of the polar modes we determined the phase transitions temperatures in the studied heterostructures. In the sub-THz frequency range of the Y(XZ)Y spectra, we revealed the coexistence of the Debye-type central peak and soft mode in bi-color BaTiO3/Ba0.5Sr0.5TiO3 superlattice.

The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence of mismatch-induced strains and spontaneous polarization in BST buffer layers on BFO layers. The lattice parameter of the BFO layers was shown to decrease with increasing concentration of Ba ions, despite the increasing in-plain lattice parameters of tetragonal unit cells of BST layers. The rhombohedral angle of the crystal structure of BFO layers demonstrates an increase towards the ideal cubic perovskite structure with the appearance of the built-in electric field, induced by the spontaneous polarization in buffer layers. This result provides a remarkable tool for the control of polarization in BFO layers and other ferroelectric films in general, by changing the built-in electric field from ferroelectric buffer layer without changing a single crystal substrate.

Paradigmatic knotted solitons, Hopfions, that are characterized by topological Hopf invariant, are widely investigated in the diverse areas ranging from high energy physics, cosmology and astrophysics to biology, magneto- and hydrodynamics and condensed matter physics. Yet, while holding high promise for applications, they remain elusive and under-explored. Here we demonstrate that Hopfions emerge as a basic configuration of polarization field in confined ferroelectric nanoparticles. Our findings establish that Hopfions govern a wealth of novel functionalities in the electromagnetic response of composite nanomaterials opening route to unprecedented technological applications.

The pressing quest for overcoming Boltzmann tyranny in low-power nanoscale electronics revived the thoughts of engineers of early 1930-s on the possibility of negative circuit constants. The concept of the ferroelectric-based negative capacitance (NC) devices triggered explosive activity in the field. However, most of the research addressed transient NC, leaving the basic question of the existence of the steady-state NC unresolved. Here we demonstrate that the ferroelectric nanodot capacitor hosts a stable two-domain state realizing the static reversible NC device thus opening routes for the extensive use of the NC in domain wall-based nanoelectronics.

We investigate the relaxation and conduction mechanism of Ba0.90Sr0.10TiO3 (BST) ceramic, synthesized by the solid state reaction method. The dielectric and relaxation properties are analyzed in the temperature range of 380-450{\deg}C with alternative current in the frequency range of 20Hz-1MHz. Variation of dielectric constant, \epsilon', with temperature shows a normal ferroelectric transition at Tc=95{\deg}C with a weak degree of diffuseness. The modified Cole-Cole equation is used to describe all contributions to the relaxation mechanism. The frequency exponent m({\omega},T) deduced from experimental data of the dielectric loss ({\epsilon}") as m({\omega}, T)=($\partial$ ln {\epsilon}"/$\partial$ ln {\omega}) shows a temperature and frequency dependence. Two conduction process are observed: non-overlapping small-polaron tunneling (NSPT) at low frequencies and overlapping large polaron tunneling (OLPT) at high frequencies. The analysis of Nyquist plots reveals also the presence of two contributions, who which the activation energies have been calculated.

We construct a comprehensive theory of the electrodynamic response of ferroelectric ultra-thin films containing periodic domain textures (PDT) with 180{\deg} polarization-oriented domains. The focal point of the theory is the negative-capacitance phenomenon which naturally arises from the depolarization field induced by PDT. We derive frequency-dependent dielectric permittivity related to the PDT dynamics across the entire frequency range. We find the resonance mode of domain oscillations in the THz spectral band and the singular points in the phase of the reflected THz beam that are intimately related to the negative capacitance. Our findings provide a platform for the THz negative capacitance-based optics of ferroelectric films and for engineering the epsilon-near-zero plasmonic THz metamaterials.