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1. A Novel Dog-Bone Oscillating AFM Probe with Thermal Actuation and Piezoresistive Detection

Author

Zhuang Xiong, Estelle Mairiaux, Benjamin Walter, Marc Faucher, Lionel Buchaillot, and Bernard Legrand

Subjects
AFM, Micromechanical resonator, thermal actuation, piezoresistive detection, Chemical technology, TP1-1185
Abstract

In order to effectively increase the resonance frequency and the quality factor of atomic force microscope (AFM) probes, a novel oscillating probe based on a dog-bone shaped MEMS resonator was conceived, designed, fabricated and evaluated. The novel probe with 400 μm in length, 100 μm in width and 5 μm in thickness was enabled to feature MHz resonance frequencies with integrated thermal actuation and piezoresistive detection. Standard silicon micromachining was employed. Both electrical and optical measurements were carried out in air. The resonance frequency and the quality factor of the novel probe were measured to be 5.4 MHz and 4000 respectively, which are much higher than those (about several hundreds of kHz) of commonly used cantilever probes. The probe was mounted onto a commercial AFM set-up through a dedicated probe-holder and circuit board. Topographic images of patterned resist samples were obtained. It is expected that the resonance frequency and the measurement bandwidth of such probes will be further increased by a proper downscaling, thus leading to a significant increase in the scanning speed capability of AFM instruments.

Published
2014
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3. Split-ring resonators imaged by THz s-SNOM

Author

Cristiane N. Santos, Theo Hannotte, Louis Thomas, Benjamin Walter, Melanie Lavancier, Sophie Eliet, Marc Faucher, Jean-Francois Lampin, Romain Peretti, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Vmicro SAS (Vmicro), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), no information, and PCMP CHOP

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; Split-ring resonators (SRRs) are one of the most common building blocks to design metamaterials operating over a large range of frequencies in the electromagnetic spectrum. Here we acquire s-SNOM images with high signal-to-noise ratio on SRRs by scattering-type scanning near-field optical microscopy (s-SNOM) in the terahertz (THz) domain. By mapping the electric field distribution with subwavelength spatial resolution, we observe clear spatial asymmetries within a single SRR. These effects are more pronounced for the SRRs designed to resonate at the frequency of the probing laser (2.52 THz), compared to the SRRs that do not support a resonant mode at this frequency. This asymmetrical distribution is attributed to combined far-field and near-field multiplication effects, which depend on the position of the probing tip on the micro-resonator.

Published
2022

4. Imaging of THz photonic modes by scattering scanning near-field optical microscopy

Author

Louis Thomas, Théo Hannotte, Cristiane N. Santos, Benjamin Walter, Mélanie Lavancier, Sophie Eliet, Marc Faucher, Jean-François Lampin, Romain Peretti, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Vmicro SAS (Vmicro), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), This work was supported by the joint lab LabCom Horiba-IEMN, the international chair of excellence 'ThOTroV' from the region 'Hauts-de-France', the welcome talent grant 'NeFiStoV' from the European Metropole of Lille (MEL), I-site ULNE through the 'TeraStoVe' pluridisciplinary project, the National Research Agency (ANR) under programs 'ExCELSiOR' ANR 11-EQPX-0015 and 'COMI', ANR-17-CE24-0002, the Ministry of Higher Education and Research, Hauts de France Council, European Lille Metropole (MEL), and European Regional Development Fund (ERDF) through the Contrat de Projets Etat-Region (CPER Photonics for Society, CPER Wavetech), and the French RENATECH network on micro- and nanotechnologies. This research work has been partially undertaken with the support of IEMN frabrication (CMNF) and characterization (PCMP) facilities., PCMP CHOP, CMNF, Renatech Network, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), and ANR-17-CE24-0002,COMI,Composants pour l'Optique intégrée dans le Moyen Infrarouge(2017)

Subjects
Microscopy, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Photonics, Terahertz, Physics::Optics, General Materials Science, Resonators, s-SNOM
Abstract

International audience; We investigated the near-field distribution associated to the photonic mode of terahertz photonic micro-resonators by scattering scanning near-field optical microscopy. Probing individual THz microresonators concentrating electric field is important for high-sensitivity chemical and biochemical sensing and fundamental light-matter interactions studies at nanoscale. We imaged both electric field concentration predicted by numerical simulations and unexpected patterns that deviate from intuitive assumptions. We propose a scenario based on the multiplication of the near-field with the far-field pattern of the probe / resonator ensemble that is in excellent agreement with the experimental data and propose an image analysis procedure to recover the near-field of such structures.

Published
2022

5. Short bends using curved mirrors in silicon waveguides for terahertz waves

Author

Mattias Verstuyft, Elias Akiki, Mathias Vanwolleghem, Guillaume Ducournau, Jean-François Lampin, Benjamin Walter, Fuanki Bavedila, Édouard Lebouvier, Marc Faucher, Bart Kuyken, Universiteit Gent = Ghent University (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Vmicro SAS (Vmicro), Nano and Microsystems - IEMN (NAM6 - IEMN), Interreg (1.1.11), and Fonds Wetenschappelijk Onderzoek (1S32518N).

Subjects
[SPI]Engineering Sciences [physics], Technology and Engineering, Physics::Optics, MODE, LOSSES, Atomic and Molecular Physics, and Optics
Abstract

Dielectric waveguides are capable of confining and guiding terahertz waves along sub-wavelength sized structures. A small feature size allows for a denser integration of different photonic components such as modulators, beam-splitters, wavelength (de)multiplexers and more. The integration of components on a small scale requires bending of the waveguides. In this paper we demonstrate a very short silicon 90 degrees-bend, based on total internal reflection on an elliptically curved outer facet and a rounding of the inner corner joining two waveguides, with an average loss of 0.14 dB per bend in the 600-750 GHz range. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Published
2022

6. Design and manufacture of flexible implantable and energy autonomous neuroelectronic devices

Author

Chakrya-Anna Chhuon, Hélène Moulet, Alexis Vlandas, Philippe Mariage, Marc Faucher, Flavie Braud, Cappy, A., Christel Vanbesien, Virginie HOEL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN ), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), GDR BioComp, Renatech Network, PCMP SigmaCom, PCMP C2EM, CMNF, ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011), and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2021

7. SOI-based opto-mechanical Terahertz bolometer operating at room temperature with microsecond response time

Author

Marc Faucher, Melanie Lavancier, Benjamin Walter, J-F. Lampin, Guillaume Ducournau, Romain Peretti, K. Froberger, S. Barbieri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), PCMP CHOP, Renatech Network, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Renatech Network, PCMP CHOP

Subjects
terahertz wave detectors, Frequency response, optical sensors, Materials science, dipole antennas, Terahertz radiation, submillimetre wave measurement, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], Responsivity, law, business.industry, Bolometer, Detector, silicon, submillimetre wave detectors, Laser, cantilevers, submillimetre wave antennas, silicon-on-insulator, Microsecond, Q factor, Optoelectronics, elemental semiconductors, business, bolometers
Abstract

oral session Infrared and THz Photodetectors 2; International audience; We report the operation of a Terahertz (THz) detector exploiting the bi-material effect to resonantly excite a cantilever (CL) of micrometric size. The detector is fabricated on a SOI substrate and coupling to the incident THz radiation is obtained using two coupled aluminum half-dipole antennas. The induced CL deflection is readout optically with a 1.5 µ m laser. At 300K and 2.5THz, we obtain a peak responsivity of ~2 x 10 8 pm/W for the fundamental bending mode. This yields a NEP of ~20nW/Hz 1/2 at 2.5THz, i.e. of ~2nW/Hz 1/2 at 3.8THz, corresponding to the antenna peak absorption. Finally, the low mechanical quality factor of the mode grants a broad frequency response of approximately 100kHz, i.e. a response time of ~10 μs.

Published
2021

8. Development of a millimeter-long Travelling wave THz photomixer

Author

David Troadec, Charbel Tannoury, Vanessa Avramovic, Vincent Magnin, Sylvie Lepilliet, Marc Faucher, Dmitri A. Yarekha, Jean-Francois Lampin, Emilien Peytavit, Etienne Okada, F. Bavedila, Quyang Lin, Goulc'Hen Loas, Guillaume Ducournau, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), ANR-15-CE24-0004, French Research Agency, French Network of Major Technology Centres, Lille University, R&#x00E9, gion Hauts-de-France, Renatech Network, PCMP CHOP, ANR-15-CE24-0004,PHENIX,EMETTEUR TERAHERTZ PHOTONIQUE REPOSANT SUR UN PHOTOMELANGEUR HAUTEMENT DISTRIBUE EXCITE PAR UN LASER BIFREQUENCE(2015), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), and Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)

Subjects
Physics, Frequency response, Photomixing, Terahertz radiation, business.industry, Coplanar waveguide, 010401 analytical chemistry, Photodetector, 020206 networking & telecommunications, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Coherence length, Semiconductor laser theory, Optical pumping, [SPI]Engineering Sciences [physics], THz sources, Travelling Wave devices, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Ultrafast photodetectors, business
Abstract

International audience; THz sources based on the optical-heterodyne (photo)mixing in an ultrafast photodetector are very promising since they operate at room temperature, are potentially compact, cost-efficient and, above all, are widely frequencytunable. However, their widespread use is currently hampered by available power levels in the µW range at THz frequencies. We present here a travelling wave structure, with millimeter level coherence length at THz frequencies opening the way to large active area (~4000 µm 2) photomixing devices capable of handling optical pump power beyond 1 W well beyond the capabilities of standard lumped-element devices using small active areas (

Published
2021

10. SOI-based micro-mechanical terahertz detector operating at room-temperature and atmospheric pressure

Author

Kevin Froberger, Benjamin Walter, Melanie Lavancier, Romain Peretti, Guillaume Ducournau, Jean-François Lampin, Marc Faucher, Stefano Barbieri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Vmicro SAS (Vmicro), Nano and Microsystems - IEMN (NAM6 - IEMN), We acknowledge partial financial support from the French Renatech network, Nord-Pas de Calais Regional Council (Grant STARS-ATENA), Fonds Européens de Développement Régional, and CPER 'Photonics for Society.', and Renatech Network

Subjects
Terahertz detectors, [SPI]Engineering Sciences [physics], Physics and Astronomy (miscellaneous), Antennas, Silicon-on-insulator, Thermal effects
Abstract

International audience; We present a micro-mechanical terahertz (THz) detector fabricated on a silicon on insulator substrate and operating at room-temperature. The device is based on a U-shaped cantilever of micrometric size, on top of which two aluminum half-wave dipole antennas are deposited. This produces an absorption extending over the [Formula: see text] THz frequency range. Due to the different thermal expansion coefficients of silicon and aluminum, the absorbed radiation induces a deformation of the cantilever, which is read out optically using a 1.5 μm laser diode. By illuminating the detector with an amplitude modulated, 2.5 THz quantum cascade laser, we obtain, at room-temperature and atmospheric pressure, a responsivity of [Formula: see text] for the fundamental mechanical bending mode of the cantilever. This yields noise-equivalent-power of [Formula: see text] at 2.5 THz. Finally, the low mechanical quality factor of the mode grants a broad frequency response of approximately 150 kHz bandwidth, with a thermal response time of ∼ 2.5 μs.

Published
2022

11. Consequences of antenna effects on s-SNOM imaging of a photonic mode

Author

Marc Faucher, Theo Hannotte, S. Eliet, L. Thomas, Benjamin Walter, Romain Peretti, J-F. Lampin, Melanie Lavancier, C. Nascimento Santos, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Vmicro SAS (Vmicro), Nano and Microsystems - IEMN (NAM6 - IEMN), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), no information, OSA, PCMP CHOP, and Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)

Subjects
Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Total internal reflection, business.industry, Parabolic reflector, Terahertz radiation, Mode (statistics), Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Radiation pattern, 010309 optics, Optics, 0103 physical sciences, Near-field scanning optical microscope, Photonics, Antenna (radio), 0210 nano-technology, business
Abstract

International audience; We report on the influence of antenna effects on the imaging by THz s-SNOM of a photonic mode. Unknown radiation pattern from the probe and sample combination makes the interpretation of a s-SNOM image non-trivial.

Published
2021

12. s-SNOM imaging of a THz photonic mode

Author

Marc Faucher, Melanie Lavancier, L. Thomas, Romain Peretti, S. Eliet, Theo Hannotte, Benjamin Walter, J-F. Lampin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Vmicro SAS (Vmicro), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, PCMP CHOP, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)

Subjects
Physics, Field (physics), business.industry, Terahertz radiation, Mode (statistics), Physics::Optics, Resonator, [SPI]Engineering Sciences [physics], Thz radiation, Nano, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Near-field scanning optical microscope, Photonics, business
Abstract

International audience; We report on the imaging by THz s-SNOM of the field concentration associated to the photonic mode of a split-ring resonator with a 2 µm small gap. The ability to concentrate and probe THz radiations at this scale is of interest for studies on micro and nano objects. Our results are interpreted with numerical calculations as an interplay between the confined near-field and the directional far-field emission of the system.

Published
2020

13. High Q THz photonic crystal cavity on a low loss suspended Silicon platform

Author

Benjamin Walter, Mattias Verstuyft, Bart Kuyken, Elias Akiki, Marc Faucher, Mathias Vanwolleghem, Jean-Francois Lampin, Guillaume Ducournau, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universiteit Gent = Ghent University (UGENT), Vmicro SAS (Vmicro), This work was undertaken as part of the Terafood project, which was supported by the European Regional Development Fund and the province Oost Vlaanderen (INTERREG V FR-WA-VL 1.1.11)., PCMP CHOP, European Project, Photonique THz - IEMN (PHOTONIQ THz - IEMN), and Universiteit Gent = Ghent University [Belgium] (UGENT)

Subjects
Waveguide (electromagnetism), Materials science, Silicon, Terahertz radiation, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 010309 optics, [SPI]Engineering Sciences [physics], 0103 physical sciences, Transmittance, Deep reactive-ion etching, Electrical and Electronic Engineering, THz photonic crystal cavity, Photonic crystal, Radiation, high resistivity Silicon, business.industry, 021001 nanoscience & nanotechnology, Quality factor, chemistry, Optoelectronics, THz waveguide, 0210 nano-technology, business, Refractive index, propagation losses
Abstract

International audience; In this work, we present an ultra-high Q cavity at Terahertz (THz) frequencies. The designed cavity is built on a low loss suspended silicon (Si) waveguide. The substrate removal under the waveguide and the use of optimized deep reactive ion etching processing is the main reason for observing very low losses of this design α< 0.09 dB/mm. This very low loss behavior of this designed platform is also demonstrated by the measurement of a 1D photonic wire crystal cavity with Q>18000. Different cavity layouts are adjusted in order to maximize the transmittance while maintaining high Q. A design with reduced number of etched crystal holes achieve a Q>1500 and high transmittance T>70%. These structures are presented at sub-mm waves (around 600GHz) for the design of a gas sensor in this frequency region, but the principles can be scaled and redesigned for other frequencies in the THz band.

Published
2020

14. Proposal for an integrated silicon-photonics terahertz gas detector using photoacoustics

Author

Elias Akiki, Mattias Verstuyft, Bart Kuyken, Jean-Francois Lampin, Mathias Vanwolleghem, Benjamin Walter, Marc Faucher, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PCMP CHOP, Universiteit Gent = Ghent University (UGENT), Vmicro SAS (Vmicro), and Photonique THz - IEMN (PHOTONIQUE THz - IEMN)

Subjects
Time delay and integration, Microelectromechanical systems, Silicon photonics, Materials science, Technology and Engineering, SPECTROSCOPY, business.industry, Terahertz radiation, Detector, Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Signal, Atomic and Molecular Physics, and Optics, 010309 optics, Resonator, [SPI]Engineering Sciences [physics], Atomic and Molecular Physics, 0103 physical sciences, Gas detector, 0210 nano-technology, business
Abstract

A design and multiphysical model is presented for an on-chip gas sensor that transduces terahertz gas absorption through sound generation into a mechanical motion that can be read out externally. The signal is triply enhanced by designing a structure that functions simultaneously as an optical, an acoustical and a mechanical resonator. The structure is made in high-resistivity silicon and can be fabricated using CMOS and HEMS fabrication technologies. The sensor is a purely passive element, so an external THz source and read-out are required. The chip has a footprint of 3 mm(2). A detection limit of 234 ppb of methanol for a source power of 1 mW and an integration time of 1 ms is predicted. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Published
2020

15. Optomechanical resonating probe for very high frequency sensing of atomic forces

Author

Pierre Etienne Allain, Marc Gely, Maxime Hermouet, Benjamin Walter, Marc Faucher, Sebastien Hentz, Giuseppe Leo, E. Mairiaux, Colin Mismer, Lucien Schwab, Ivan Favero, Bernard Legrand, Guillaume Jourdan, Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Vmicro SAS (Vmicro), QuaSeRT ANR-18-QUAN-0006, Agence Nationale de la Recherche, GANOMS no. 306664, H2020 European Research Council, FET VIRUSCAN project no. 731868, European Commission, Renatech Network, ANR-14-CE26-0019,OLYMPIA,Sondes opto-mécaniques pour la microscopie AFM rapide(2014), ANR-18-QUAN-0006,QuaSeRT,Optomechanical quantum sensors at room temperature(2018), European Project: 306664,EC:FP7:ERC,ERC-2012-StG_20111012,GANOMS(2013), Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse 1 Capitole (UT1)-Université Toulouse - Jean Jaurès (UT2J), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Université Grenoble Alpes (UGA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Physics - Instrumentation and Detectors, Nanostructure, Cantilever, Materials science, FOS: Physical sciences, Applied Physics (physics.app-ph), 02 engineering and technology, 01 natural sciences, 0103 physical sciences, Microscopy, General Materials Science, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, Brownian motion, business.industry, Force spectroscopy, Instrumentation and Detectors (physics.ins-det), Physics - Applied Physics, 021001 nanoscience & nanotechnology, Microsecond, Amplitude, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Nanometre, 0210 nano-technology, business
Abstract

International audience; Atomic force spectroscopy and microscopy (AFM) are invaluable tools to characterize nanostructures and biological systems. Most experiments, including state-of-the-art images of molecular bonds, are achieved by driving probes at their mechanical resonance. This resonance reaches the MHz for the fastest AFM micro-cantilevers, with typical motion amplitude of a few nanometres. Next-generation investigations of molecular scale dynamics, including faster force imaging and higher-resolution spectroscopy of dissipative interactions, require more bandwidth and vibration amplitudes below interatomic distance, for non-perturbative short-range tip-matter interactions. Probe frequency is a key parameter to improve bandwidth while reducing Brownian motion, allowing large signal-to-noise for exquisite resolution. Optomechanical resonators reach motion detection at 10^(-18) m.(Hz)^(-1/2), while coupling light to bulk vibration modes whose frequencies largely surpass those of cantilevers. Here we introduce an optically operated resonating optomechanical atomic force probe of frequency 2 decades above the fastest functional AFM cantilevers while Brownian motion is 4 orders below. Based on a Silicon-On-Insulator technology, the probe demonstrates high-speed sensing of contact and non-contact interactions with sub-picometre driven motion, breaking open current locks for faster and finer atomic force spectroscopy.

Published
2020

16. Over-wavelength pitch sized diffraction gratings for augmented reality applications

Author

Valter Drazic, Oksana Shramkova, Bobin Varghese, Laurent Blondé, Vincent Brac De La Perrière, Jesse Schiffler, Patrice Twardowski, Sylvain Lecler, Benjamin Walter, Estelle Mairiaux, Fuanki Bavedila, Marc Faucher, Valérie Allié, InterDigital R&D France, Laboratoire d'Automatique, de Mécanique et d'Informatique industrielles et Humaines - UMR 8201 (LAMIH), Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Vmicro SAS, Nano and Microsystems - IEMN (NAM6 - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, and IEMN, Collection

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Optics, Atomic and Molecular Physics, and Optics
Abstract

International audience; Waveguide based optical combiners for augmented reality (AR) glasses are integrating several surface relief gratings (SRG) whose pitch sizes can be as small as 200 nm for the blue wavelength. All SRG components exploit the first diffraction order to couple in and out or to deviate the light. We present SRG using higher diffraction orders featuring over-wavelength pitch sizes. Our gratings use the edge wave (EW) diffraction phenomenon to steer light in the preferred far field direction.

Published
2022

17. Gallium nitride MEMS resonators: how residual stress impacts design and performances

Author

Lionel Buchaillot, Pascal Tilmant, Marc Faucher, Stefan Degroote, Marianne Germain, Christophe Morelle, Vanessa Avramovic, V. Zhang, Joff Derluyn, Virginie Brandli, Etienne Okada, François Vaurette, Bertrand Grimbert, Didier Theron, Isabelle Roch-Jeune, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EpiGaN, EpiGaN nv, Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Renatech Network, Physique - IEMN (PHYSIQUE - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Acknowledgements This work has been supported by the French National Agency (ANR) with the project ASTRID AMGASI ANR-11-ASTR-0037. We thank the Direction Générale de l’Armement (DGA) and Région Hauts-de-France for fnancial support. This work was partly supported by the French RENATECH network., and ANR-11-ASTR-0037,AMGaSi,Accéléromètre MEMS en GaN sur Silicium(2011)

Subjects
Microelectromechanical systems, Materials science, Gallium nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Piezoelectricity, Electronic, Optical and Magnetic Materials, Stress (mechanics), [SPI]Engineering Sciences [physics], chemistry.chemical_compound, Resonator, Quality (physics), chemistry, Flexural strength, Hardware and Architecture, Residual stress, 0103 physical sciences, Electrical and Electronic Engineering, Composite material, 010306 general physics, 0210 nano-technology
Abstract

International audience; Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In clamped-clamped beams, it is well known that tensile stress can be used to increase the resonant frequency. Here we calculate the mode shape functions of out-of-plane flexural modes in pre-stressed beams and we derive a model to predict both the resonant frequency and the piezoelectric actuation factor. We show that a good agreement between theory and experimental results can be obtained and we derive the optimal design for the electromechanical transduction. Finally, our model predicts an increase of the quality factor due to the tensile stress, which is confirmed by experimental measurements under vacuum. This study demonstrates how to take advantage from the material quality and initial stress resulting of the epitaxial process.

Published
2017

18. A Suspended Silicon Terahertz platform with low loss waveguide and high Q Photonic Crystal cavities

Author

Benjamin Walter, Marc Faucher, Jean-Francois Lampin, Guillaume Ducournau, Elias Akiki, Mathias Vanwolleghem, E. Mairiaux, Bart Kuyken, Mattias Verstuyft, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Ecole Centrale de Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Université Polytechnique Hauts-de-France (UPHF), Photonics Research Group, Department of Information Technology (INTEC), Ghent University [Belgium] (UGENT)-Ghent University [Belgium] (UGENT), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universiteit Gent = Ghent University [Belgium] (UGENT)-Universiteit Gent = Ghent University [Belgium] (UGENT), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Vmicro SAS (Vmicro), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Universiteit Gent = Ghent University (UGENT)-Universiteit Gent = Ghent University (UGENT), Universiteit Gent = Ghent University (UGENT), Nano and Microsystems - IEMN (NAM6 - IEMN), and NONE FOUND.

Subjects
Silicon, Materials science, Loss measurement, Optical resonators, Terahertz radiation, Physics::Medical Physics, Physics::Optics, chemistry.chemical_element, Photoacoustic imaging in biomedicine, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Waveguide (optics), law.invention, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Etching (microfabrication), law, 0202 electrical engineering, electronic engineering, information engineering, Cavity resonators, ComputingMilieux_MISCELLANEOUS, Photonic crystal, business.industry, 010401 analytical chemistry, 0104 chemical sciences, Optical waveguides, Etching, chemistry, Optical cavity, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Optical losses, business
Abstract

International audience; A high Q optical resonator and ultra-low losses of a silicon suspended waveguide, are experimentally measured and presented, in order to demonstrate the working of a designed photoacoustic terahertz gas sensor presented in our previous work.

Published
2019

19. Terahertz near-field imaging using batch-fabricated cantilevers with 70 μm long tips

Author

Marc Faucher, Benjamin Walter, J-F. Lampin, D. Vignaud, S. Eliet, E. Mairiaux, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), Renatech Network, Vmicro SAS, Photonique THz - IEMN (PHOTONIQUE THz - IEMN), and A C K N O W L E D G M E N T :We acknowledge the Equipex Excelsior ANR 11-EQPX0015 for funding part of this work and the RENATECH network.

Subjects
Materials science, Cantilever, Terahertz radiation, 02 engineering and technology, 010402 general chemistry, Optical microscopy, 01 natural sciences, Optical imaging, law.invention, Atomic force microscopy, [SPI]Engineering Sciences [physics], Optical microscope, law, Force, business.industry, Graphene, Scattering, 021001 nanoscience & nanotechnology, Near field imaging, 0104 chemical sciences, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; Batch-fabricated atomic force microscopy cantilevers with tip longer than 70 μm are reported. They are designed to increase terahertz focusing in scattering optical nearfield imaging. Terahertz imaging of graphene samples with sub-100 nm features is presented.

Published
2019

20. An Integrated Photoacoustic Terahertz Gas Sensor

Author

Mattias Verstuyft, Benjamin Walter, Bart Kuyken, Mathias Vanwolleghem, Elias Akiki, Marc Faucher, Photonics Research Group, Department of Information Technology (INTEC), Universiteit Gent = Ghent University [Belgium] (UGENT)-Universiteit Gent = Ghent University [Belgium] (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Vmicro SAS (Vmicro), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique (LIA LICS/LEMAC), Centre National de la Recherche Scientifique (CNRS)-Ecole Centrale de Lille-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Université Polytechnique Hauts-de-France (UPHF), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Universiteit Gent = Ghent University (UGENT)-Universiteit Gent = Ghent University (UGENT), Universiteit Gent = Ghent University (UGENT), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), and NONE FOUND.

Subjects
Time delay and integration, Silicon, Materials science, Technology and Engineering, Terahertz radiation, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Damping, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Gas detector, Cavity resonators, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Q-factor, Acoustics, Heating systems, 021001 nanoscience & nanotechnology, Trace gas, Amplitude, chemistry, Physics and Astronomy, Q factor, Optical cavity, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; An on-chip gas detector that transduces absorbed terahertz light to a mechanical motion using photoacoustics is proposed. The silicon chip confines light in an optical cavity, wherein an acousto-mechanical cavity is housed. The concentration of a trace gas can be determined from the amplitude of a membrane's motion. The simulations presented predict a minimum detectable limit of 1 ppm of methanol for 1 mW of terahertz power and an integration time of 25 ms.

Published
2019

21. Micro-Electro-Mechanical-Systems advances for measurements at small scales: the vertical silicon probes technology extended to nearfield optics

Author

E. Mairiaux, Jean-Francois Lampin, S. Eliet, Benjamin Walter, Marc Faucher, Vmicro SAS, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Renatech Network, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), ACKNOWLEDGMENTS We acknowledge the equipex Excelsior ANR 11-EQPX-0015 for funding part of this work., ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), and Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN)

Subjects
Materials science, Silicon, Instrumentation, Transducers, chemistry.chemical_element, Physics::Optics, Near and far field, 02 engineering and technology, 01 natural sciences, Optical imaging, law.invention, Atomic force microscopy, [SPI]Engineering Sciences [physics], Optics, Optical microscope, law, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Force, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Microelectromechanical systems, business.industry, Scattering, Piezoresistance, 021001 nanoscience & nanotechnology, Laser, chemistry, Near-field scanning optical microscope, Probes, 0210 nano-technology, business
Abstract

International audience; Instrumentation intending to go beyond the limits of current Atomic Force Microscope setups (AFM), and applications requiring AFM to be integrated in non-standards environmental conditions need sensors that overcome limitations given by available probes. We show that the vertical probe technology enabling AFM without laser is also applicable to scattering SNOM (Scanning Near Field Optical Microscopy).

Published
2019

22. Gallium Nitride as an Electromechanical Material

Author

Mina Rais-Zadeh, Yvon Cordier, Vikrant J. Gokhale, Didier Theron, Marc Faucher, Lionel Buchaillot, and Azadeh Ansari

Subjects
Microelectromechanical systems, Electron mobility, Materials science, business.industry, Mechanical Engineering, Transistor, Wide-bandgap semiconductor, Gallium nitride, High-electron-mobility transistor, Integrated circuit, 7. Clean energy, law.invention, chemistry.chemical_compound, chemistry, law, Optoelectronics, Electronics, Electrical and Electronic Engineering, business
Abstract

Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular material after silicon in the semiconductor industry. The prime movers behind this trend are LEDs, microwave, and more recently, power electronics. New areas of research also include spintronics and nanoribbon transistors, which leverage some of the unique properties of GaN. GaN has electron mobility comparable with silicon, but with a bandgap that is three times larger, making it an excellent candidate for high-power applications and high-temperature operation. The ability to form thin-AlGaN/GaN heterostructures, which exhibit the 2-D electron gas phenomenon leads to high-electron mobility transistors, which exhibit high Johnson's figure of merit. Another interesting direction for GaN research, which is largely unexplored, is GaN-based micromechanical devices or GaN microelectromechanical systems (MEMS). To fully unlock the potential of GaN and realize new advanced all-GaN integrated circuits, it is essential to cointegrate passive devices (such as resonators and filters), sensors (such as temperature and gas sensors), and other more than Moore functional devices with GaN active electronics. Therefore, there is a growing interest in the use of GaN as a mechanical material. This paper reviews the electromechanical, thermal, acoustic, and piezoelectric properties of GaN, and describes the working principle of some of the reported high-performance GaN-based microelectromechanical components. It also provides an outlook for possible research directions in GaN MEMS.

Published
2014

23. Atomic force microscope based on vertical silicon probes

Author

E. Mairiaux, Benjamin Walter, Marc Faucher, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Renatech Network

Subjects
Signal processing, Materials science, Physics and Astronomy (miscellaneous), Silicon, Polymers, Transducers, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Amplitude modulation, Resonator, Atomic force microscopy, [SPI]Engineering Sciences [physics], Optics, 0103 physical sciences, 010306 general physics, business.industry, Electronic noise, Detector, 021001 nanoscience & nanotechnology, Piezoresistive effect, MEMS technology, Transducer, chemistry, Chemical elements, 0210 nano-technology, Actuator, business, Frequency modulation, Stiffness constant
Abstract

International audience; A family of silicon micro-sensors for Atomic Force Microscope (AFM) is presented that allows to operate with integrated transducers from medium to high frequencies together with moderate stiffness constants. The sensors are based on Micro-Electro-Mechanical-Systems technology. The vertical design specifically enables a long tip to oscillate perpendicularly to the surface to be imaged. The tip is part of a resonator including quasi-flexural composite beams, and symmetrical transducers that can be used as piezoresistive detector and/or electro-thermal actuator. Two vertical probes (Vprobes) were operated up to 4.3 MHz with stiffness constants 150 N/m to 500 N/m and the capability to oscillate from 10 pm to 90 nm. AFM images of several samples both in amplitude modulation (tapping-mode) and in frequency modulation were obtained.

Published
2017

24. Multi-MHz micro-electro-mechanical sensors for atomic force microscopy

Author

Didier Theron, Benjamin Walter, Jean-Paul Salvetat, Jean-Pierre Aimé, Marc Faucher, Bernard Legrand, Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de Recherche Paul Pascal (CRPP), Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Chimie et Biologie des Membranes et des Nanoobjets (CBMN), Université de Bordeaux (UB)-École Nationale d'Ingénieurs des Travaux Agricoles - Bordeaux (ENITAB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Renatech Network, ANR-12-EMMA-0039,VIBRATIONS,sondes Microsystèmes pour l'imagerie vidéo de nanosystèmes biologiques(2012), European Project: 210078,EC:FP7:ERC,ERC-2007-StG,SMART(2008), European Project: 297518,EC:FP7:ERC,ERC-2011-PoC,PROMISING(2012), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, and École Nationale d'Ingénieurs des Travaux Agricoles - Bordeaux (ENITAB)-Institut de Chimie du CNRS (INC)-Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Cantilever, Oscillation, business.industry, Analytical chemistry, 02 engineering and technology, Conductive atomic force microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Vibration, Resonator, [SPI]Engineering Sciences [physics], Amplitude, 0103 physical sciences, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, business, Instrumentation, Non-contact atomic force microscopy
Abstract

International audience; Silicon ring-shaped micro-electro-mechanical resonators have been fabricated and used as probes for dynamic atomic force microscopy (AFM) experiments. They offer resonance frequency above 10 MHz, which is notably greater than that of usual cantilevers and quartz-based AFM probes. On-chip electrical actuation and readout of the tip oscillation are obtained by means of built-in capacitive transducers. Displacement and force resolutions have been determined from noise analysis at 1.5 fm/√Hz and 0.4 pN/√Hz, respectively. Despite the high effective stiffness of the probes, the tip-surface interaction force is kept below 1 nN by using vibration amplitude significantly below 100 pm and setpoint close to the free vibration conditions. Imaging capabilities in amplitude- and frequency-modulation AFM modes have been demonstrated on block copolymer surfaces. Z-spectroscopy experiments revealed that the tip is vibrating in permanent contact with the viscoelastic material, with a pinned contact line. Results are compared to those obtained with commercial AFM cantilevers driven at large amplitudes (>10 nm).

Published
2017

25. Gallium nitride MEMS resonators: How residual stress impacts design and performances

Author

Vanessa Avramovic, Didier Theron, Etienne Okada, Christophe Morelle, Marc Faucher, Virginie Brandli, Bertrand Grimbert, and Isabelle Roch-Jeune

Subjects
Materials science, Piezoelectric coefficient, business.industry, Gallium nitride, 02 engineering and technology, Structural engineering, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoelectricity, Computer Science::Other, Condensed Matter::Materials Science, chemistry.chemical_compound, Resonator, chemistry, Flexural strength, Residual stress, 0103 physical sciences, PMUT, Optoelectronics, 010306 general physics, 0210 nano-technology, business, Actuator
Abstract

Stressed gallium nitride micro-resonators with integrated piezoelectric transducers have been designed, fabricated, and characterized. In resonant beams, it is well known that tensile stress can be used to increase the resonant frequency. Here we additionally calculate the modification of the mode shape functions of out-of-plane flexural modes. We derive an analytical model to predict both the resonant frequency and the piezoelectric actuation factor of our resonators. We show that a good agreement can be obtained and that the actuator must be properly designed to optimize the electromechanical transduction.

Published
2016

26. When capacitive transduction meets the thermomechanical limit: Towards femto-newton force sensors at very high frequency

Author

Didier Theron, L. Buisson, S. Houmadi, Jean-Paul Salvetat, Bernard Legrand, Jean-Pierre Aimé, Damien Ducatteau, Benjamin Walter, Pascal Merzeau, Marc Faucher, Juan Elezgaray, E. Mairiaux, Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Centre de recherches Paul Pascal (CRPP), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Microelectromechanical systems, Materials science, business.industry, Capacitive sensing, Femto, Very high frequency, Force sensor, Microwave detection, Resonator, Microscopy, Electronic engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; We show that the capacitive transduction of a MEMS device using a setup based on a microwave detection scheme achieves the measurement of the thermomechanical noise spectrum of a high-frequency (>10 MHz) high-stiffness (>10 5 N/m) resonator, reaching the outstanding displacement resolution of 1 fm/√Hz. This result paves the way for vibrating sensors with exquisite force resolution in the fN/vHz range, enabling large-bandwidth measurements of mechanical interactions at small scale and rheology of fluids at very high frequency. An example of application is given and concerns atomic force microscopy images of biomolecular assemblies.

Published
2015

27. Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation

Author

Christophe Morelle, Marc Faucher, Didier Theron, V. Zhang, and Lionel Buchaillot

Subjects
010302 applied physics, Beam diameter, Materials science, business.industry, Mechanical Engineering, 02 engineering and technology, Microbeam, Structural engineering, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoelectricity, Finite element method, Electronic, Optical and Magnetic Materials, Computational physics, Stress (mechanics), Resonator, Mechanics of Materials, 0103 physical sciences, Cylinder stress, Electrical and Electronic Engineering, 0210 nano-technology, business, Beam (structure)
Abstract

The characteristics of piezoelectric micro-resonators based on vibrating beams essentially depend on two basic physical coefficients, an effective Young's modulus (Y e) and a piezoelectric coupling factor (e 31e). An improved analytic model is proposed with newly derived expressions of Y e and e 31e that account for the anisotropic properties of the III-nitride materials and beam width, W. The analytic model applicable to the only axial stress is completed by finite element (FE) simulations that allow any spatial patterns of pre-stress in wafers to be studied. The value of e 31e for wider beams is analytically demonstrated to be much higher than the usual e 31, and a strong dependence of e 31e on W is also confirmed by FE simulations. Resonance frequency (f r) and actuation efficiency (η) are numerically studied for several pre-stress patterns and beam dimensions. The f r is found to be sensitive to the beam width only for resonators under 2D pre-stress while the η to the stress magnitude regardless of stress pattern. Compared with measurements published for some fabricated resonators, both analytic and FE approaches agree well quantitatively for the resonance frequency and qualitatively for the dynamic amplitude. The results of this study can help design optimization, such as appropriate electrode length and suitable beam width, to gain better performance for this type of resonators.

Published
2017

29. Éditorial

Author

Jean-Marc Faucher

Published
2017

34. A GaN Schottky diode-based analog phase shifter MMIC

Author

Mohammed Zaknoune, Damien Ducatteau, Chong Jin, Dimitris Pavlidis, Etienne Okada, Marc Faucher, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Advanced NanOmeter DEvices - IEMN (ANODE - IEMN)

Subjects
Materials science, Phase shifter, business.industry, 020208 electrical & electronic engineering, Schottky diode, 020206 networking & telecommunications, 02 engineering and technology, Gallium nitride, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Phase shift module, Monolithic microwave integrated circuit
Abstract

International audience; A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45 degrees with similar to 7 dB insertion loss and a maximum VSWR of 2: 1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.

Published
2014

36. Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Author

Eric Frayssinet, Didier Theron, Marc Faucher, Yvon Cordier, Christophe Morelle, Paul Leclaire, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nano and Microsystems - IEMN (NAM6 - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Microelectromechanical systems, Nanoelectromechanical systems, Materials science, Fabrication, business.industry, Mechanical Engineering, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Electronic, Optical and Magnetic Materials, Resonator, Mechanics of Materials, Gauge factor, 0103 physical sciences, Optoelectronics, Power semiconductor device, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

International audience; We present the first results about microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results assess the use of thin buffers for GaN MEMS fabrication. On a 700 nm thick AlGaN/GaN epilayer, a high tensile stress is observed to increase the resonant frequency. The electromechanical coupling efficiencies of integrated transducers are assessed and compared with previously obtained results on commercially available 2-µm thick epilayers used for power transistor applications. A 28 nm/V actuation efficiency is measured on the 700-nm thick structure which is slightly better than the one measured on the 2-µm buffer. The electrical response of a gate-less detector designed as a piezoresistance was carried out and a gauge factor of 60 was estimated. These results show that material issues can be unlocked to exploit the potentialities of III-nitrides for NEMS applications.

Published
2016

40. Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation.

Author

Victor Zhang, Marc Faucher, Didier Theron, Christophe Morelle, and Lionel Buchaillot

Subjects
*GALLIUM nitride, *RESONATORS, *PIEZOELECTRICITY, *YOUNG'S modulus, *AXIAL stresses
Abstract

The characteristics of piezoelectric micro-resonators based on vibrating beams essentially depend on two basic physical coefficients, an effective Young’s modulus (Ye) and a piezoelectric coupling factor (e31e). An improved analytic model is proposed with newly derived expressions of Ye and e31e that account for the anisotropic properties of the III-nitride materials and beam width, W. The analytic model applicable to the only axial stress is completed by finite element (FE) simulations that allow any spatial patterns of pre-stress in wafers to be studied. The value of e31e for wider beams is analytically demonstrated to be much higher than the usual e31, and a strong dependence of e31e on W is also confirmed by FE simulations. Resonance frequency (fr) and actuation efficiency (η) are numerically studied for several pre-stress patterns and beam dimensions. The fr is found to be sensitive to the beam width only for resonators under 2D pre-stress while the η to the stress magnitude regardless of stress pattern. Compared with measurements published for some fabricated resonators, both analytic and FE approaches agree well quantitatively for the resonance frequency and qualitatively for the dynamic amplitude. The results of this study can help design optimization, such as appropriate electrode length and suitable beam width, to gain better performance for this type of resonators. [ABSTRACT FROM AUTHOR]

Published
2017
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