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Amorphous YCrO3 (YCO) films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼105 between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space-charge limited conduction mechanisms, respectively. [ABSTRACT FROM AUTHOR]

A self-powered UV sensor with high responsivity was developed by coupling ZnO based piezoelectric nanogenerator and photodetector for uninterrupted real-time monitoring of UV radiation. Unlike conventional UV photodetectors, our approach couples a ZnO based metal-semiconductor-metal photodetector as a variable load resistor with a flexible ZnO:PVDF piezoelectric nanogenerator through impedance matching to realize self-powering of photodetector. The as fabricated UV photodetector exhibits a dark resistance of approximately 55 MΩ and change of resistance from 12 to 2 MΩ in response to UV illumination ranging from 1.5 to 14.5 mW/cm2. Under UV exposure of 1.5 mW/cm2, the output voltage of self-powered UV sensor drops from ∼14.6 V (dark) to ∼3.88 V. With increasing UV intensity from 1.5 to 14.5 mW/cm2, the output voltage gradually decreases from ∼3.88 to ∼1.04 V due to reduced ZnO photodetector resistance. This self-powered UV sensor exhibits excellent performance with a sensitivity of ∼93%, a voltage responsivity of 7.14 V (mW−1 cm−2), a response time of 0.67 s, and a recovery time of 4 s, which are better than the previous reports. The environmentally stable and biocompatible nature of ZnO based system makes it a promising candidate for self-powered real time ultraviolet remote sensing applications. [ABSTRACT FROM AUTHOR]

Abstract: In a recent report, Lee et al. have proposed an “effective field model” for extrinsic doping to explain the electrical properties of Al‐doped zinc oxide (ZnO) films grown by atomic layer deposition (ALD). They have introduced the doping model by considering the layered structure of the ALD‐grown films as observed in the transmission electron microscopy measurements. However, in the present comment, we have demonstrated that the suggested doping model is misleading in which physically inconsistent assumptions are considered throughout. Herein, a reasonable interpretation of the electrical properties and doping mechanism of the ALD‐grown films by taking into consideration the theoretical formulations of the disordered electronic system is suggested. [ABSTRACT FROM AUTHOR]

High quality (1 0 0) oriented thin films of (Y 0.9 Bi 0.1 )(Fe 0.5 Cr 0.5 )O 3 [YBFCO] were deposited on (1 0 0) LAO substrates with conducting LNO buffer layer as bottom electrode. YBFCO thin film was found to demonstrate interesting room temperature multiferroic properties where the origin of weak ferroelectricity could be mainly attributed to disordered transition metal ions of unlike spins, and magnetic behavior was ascribed to uncompensated weak ferromagnetism arises due to magnetic cluster state in disordered system. Dielectric anomaly near magnetization reversal temperature ( T irr ) revealed magnetodielectric effect in YBFCO film. In addition, leakage current behavior of the film was explained by trap-controlled space-charge-limited current conduction (SCLC) mechanism. [ABSTRACT FROM AUTHOR]

We report the switchable photovoltaic effects in graphene/BiFeO3/Pt heterostructures. Pure phase polycrystalline BiFeO3 films were deposited on Pt/TiO2/SiO2/Si substrates by pulse laser deposition. A bilayer graphene was transferred onto the BiFeO3 film which serves as transparent conducting electrodes. The heterostructures showed switchable photovoltaic effect depending on ferroelectric polarization directions indicating depolarization field induced separation of photogenerated carriers. The open circuit voltage (VOC) and short circuit current density (JSC) were measured to be ~ 110 mV, ~92 μA/cm² in positive polarity and similar values were obtained when the polarity was reversed. The JSC and VOC also showed rapid response (< 100 ms) as a function of light exposure time. [ABSTRACT FROM AUTHOR]

Highlights: [•] High quality thin film of multiferroic BiFeO3 on SrRuO3 is grown by RF Sputtering. [•] The Pt/BFO/SRO structure showed diode like behavior through I–V measurement. [•] Appreciable VOC and JSC were observed with illumination of white light. [•] The photoresponse at zero bias of BFO film showed rapid increase in photocurrent. [•] Application of BFO film for photosensitive capacitor is demonstrated. [ABSTRACT FROM AUTHOR]

We report enhancement of photovoltaic properties of highly oriented BiFeO3(BFO) thin films. The single phase rhombohedral R3c space group structure was confirmed by XRD and Raman spectra in the films grown on SrTiO3(111) substrates using RF magnetron sputtering. The films of BFO were characterized in planar geometry with top Pt electrodes having 200μm diameter, ∼40nm thickness and at a regular spacing of ∼150μm deposited by DC sputtering process. For photovoltaic studies the current voltage characteristic of as grown and poled samples were studied under the white light illumination having energy density of ∼1kW/m2. The as grown films showed open circuit voltage (Voc) of ∼3.9V which increased up to ∼17.8V on poling with 200V. This enhancement in Voc by poling was attributed to increase in net polarization due to alignment of domains in the direction of applied electric field and hence potential barriers between the domains. [ABSTRACT FROM AUTHOR]

The unipolar resistive switching characteristics of the amorphous LaLuO3thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable nonvolatile switching of the resistance of LaLuO3films was obtained between two well defined states of low and high resistance with nearly constant resistance ratio ∼107and non-overlapping switching voltages in the range of 0.66-0.83 V and 1.9-2.7 V respectively. The temperature dependent measurement revealed metallic and semiconducting behavior in low and high resistance states respectively. The switching between low and high resistance states was attributed to the change in the separation between oxygen vacancies in light of the correlated barrier hopping theory. The current conduction mechanism of the device in high-resistance state followed the Poole's law, whereas the conduction in low-resistance state was found to be dominated by percolation. The resistance of low and high resistance states of the film showed no obvious degradation for up to ∼104seconds indicating good retention. The achieved characteristics of the resistive switching in LaLuO3thin films seem to be promising for futuristic nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

Abstract: A novel multilevel resistive switching was observed in trilayer stacked geometry composed of graphene nano flakes sandwiched between polyvinylidene fluoride layers fabricated by spin coating method, which are expected to fulfill the need of high density data storage memories. External parameters such as current compliance and induced voltage pulse imposed on the devices provided an aid to tune the inherent resistance states. As fabricated devices exhibited multi level switching with stable resistance ratios between different resistance states having excellent data retention and endurance. Space charge limited conduction and Fowler–Nordheim (F–N) tunneling were found to be responsible for the switching mechanism. Graphene enriched with trapping sites provides the adequate environment for F–N tunneling process to occur, resulting in multi-bit resistance states. [Copyright &y& Elsevier]

Maxwell–Wagner relaxation dominated Al2O3/TiO2 nanolaminates (ATA NLs) have recently demonstrated their potential for high-density energy storage applications. In this report, we have unraveled the defect-mediated transport mechanisms prevailing in Al2O3/TiO2 sub-nanometric laminates. Temperature-dependent ac conductivity measurements revealed the signature of small polaron hopping in TiO2 active layers and trap-assisted tunneling transport through Al2O3 barrier layers, which was corroborated by resonant photoelectron spectroscopy and temperature-dependent current–voltage measurement. The polaronic defect states, found ∼1 eV below the Fermi level, served as the hopping centers and leakage paths for current. The signature of quantum tunneling transport and the negative differential conductance observed toward higher electric field was attributed to the splitting of delocalized minibands. These transport properties of Al2O3/TiO2 nanolaminates will help in tailoring these materials for next-generation storage capacitors. [ABSTRACT FROM AUTHOR]

The resistive switching phenomenon is attributed to local formation and rupture of conductive filaments (CF), however some aspects of the switching mechanism still need wider consensus. The origin of resistance contribution to low resistance state (LRS) and high resistance state (HRS) is although well known, the origin of capacitive contribution to the memory state of resistive random access memory device (RRAM) is ambiguous. Here we report impedance spectroscopic studies carried on Cu/TiO 2 /Pt devices to address the origin of resistive and capacitive contribution, where the effect of DC bias voltage, reset stop voltage and set compliance current on the impedance of RRAM memory states were investigated in detail. The studies revealed that the capacitive contribution was dominated by the surrounding TiO 2 bulk and contrary to existing knowledge, gap formed owing to ruptured CF has negligible role. These studies also reaffirmed the origin of the resistive contribution to the HRS and LRS state, which was dictated by the ruptured gap and connected CF, respectively. Results of this study may be significant towards improving the switching time and operating frequency performance of futuristic memory, RF switch and neuromorphic computing applications of RRAM devices. [ABSTRACT FROM AUTHOR]

Photodetectors based on n‐Mg0.25Zn0.75O/p‐Si heterojunctions are not only suitable for integration with existing semiconductor technology, but also circumvent the difficulty of stable p‐type doping in MgxZn1–xO. However, the use of Si leads to photoresponse in the visible part of the light spectrum, which renders n‐MgxZn1–xO/p‐Si heterojunction devices unsuitable for visible blind UV photodetection. Herein, it is demonstrated that the visible photoresponse in the n‐Mg0.25Zn0.75O/p‐Si photodetectors can be significantly suppressed by inserting a thin interlayer of MgO at the heterojunction. The MgO layer serves as a blocking layer for the drift of photo‐excited electrons from p‐Si to n‐Mg0.25Zn0.75O, thereby limiting the visible photoresponse. It is found that on increasing the thickness of the MgO interlayer from 3 to 15 nm, the UV to visible rejection ratio increases from ≈25 to 200. This enhancement in the UV to visible rejection ratio demonstrates that n‐Mg0.25Zn0.75O/p‐Si heterojunction devices with MgO interlayer are promising for visible‐blind UV photodetection applications. [ABSTRACT FROM AUTHOR]

Piezoelectric nanogenerators (PENG), which convert random mechanical energy into electrical energy, have attracted considerable attention due to their application potential in self-powered micro and nano electronics devices, wearable electronics, sensors etc. PENGs based on ZnO nanostructures are particularly important due to their low cost, flexibility and bio-compatibility. Flexible PENGs based on ZnO nanostructures dispersed in Polydimethylsiloxane (PDMS) in ITO/ZnO:PDMS/ITO device configuration were fabricated and characterized for vibration energy harvesting applications. Surfactant free ZnO nanostructures were grown using co-precipitation route and ZnO:PDMS nano-composite films with ZnO content varying in the range of 1.5–7.5 wt% were deposited on ITO/PET substrates for PENG fabrication. The maximum open circuit voltage and short circuit current of ~ 2.5 V and ~ 4 µA respectively were obtained in PENG fabricated with 6 wt% ZnO. The output characteristics were further enhanced to 5 V and 6 µA with flowing oxygen ambient annealing of ZnO nanostructures generating an instantaneous power density of ~9.55 µWcm−2. X-ray photoelectron spectroscopy studies confirmed reduction in oxygen vacancy and enhancement in oxygen interstitial concentrations on oxygen annealing which leads to the suppression of free carrier induced internal screening in ZnO nanostructures. This suppression of internal screening effect is the possible reason for the enhancement in output characteristics of ZnO:PDMS PENG fabricated with oxygen annealed ZnO nanostructures. The electrical energy generated by the ZnO:PDMS PENG was rectified and effectively stored in capacitors and used to power LEDs and LCD display. • ZnO nanostructures were grown by co-precipitation method with air and oxygen annealing. • ZnO:PDMS PENG with variable wt% of ZnO in PDMS were fabricated in ITO/ZnO:PDMS/ITO configuration. • The output performance of ZnO:PDMS PENG is improved significantly by annealing ZnO nanostructures in flowing oxygen ambient. • XPS established a correlation between the oxygen related point defects in ZnO and output characteristics of ZnO based PENG. • The output energy from ZnO:PDMS PENG was rectified and effectively stored in capacitor to flash LEDs and LCD display. [ABSTRACT FROM AUTHOR]

We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (VOC) and short circuit current (JSC) were found to be ~0.022 V and ~650 μA/cm², respectively after positive poling, whereas significant difference in VOC ~ 0.018V and JSC ~ 700 μA/cm² was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field. [ABSTRACT FROM AUTHOR]

With the rapid development of new device miniaturization technology, there is invigorated interest in magnetic nanostructures for potential application in novel multifunctional devices. In continuation to our search for a suitable magnetic material having Curie temperature (Tc) well above room temperature for multifunctional applications, we have studied the dielectric, optical, magnetic, and resistance switching characteristics of Ni0.65Zn0.35Fe2O4 (NZFO) thin films. The observation of only (004) reflection in the X-ray diffraction patterns confirms the c-axis orientation and high quality growth of NZFO thin films. The presence of mixed valences of Fe2+/Fe3+ cations is probed by X-ray photon spectroscopy, which supports the cationic ordering-mediated large dielectric response. Our investigations reveal NZFO to be an indirect band gap material (~1.8eV) with a direct gap at ~2.55eV. These nanostructures exhibit high saturation magnetization and a low coercive field with a ferrimagnetic-paramagnetic phase transition of ~713K. Magnetic force microscopy studies revealed the stripe-like domain structure of the investigated thin films. In addition, these thin films exhibit reliable and repeatable unipolar resistive switching characteristics. The observed high dielectric permittivity with low loss tangent, large magnetization with soft magnetic behavior, striped magnetic domain structure and reliable resistance switching in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices. [ABSTRACT FROM AUTHOR]

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7 GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at ∼8.9 GPa. The observed pressure-volume data were fitted with the third order Birch-Murnaghan equation of state yielding zero pressure bulk modulus Bo=132(22) and 177(9) GPa for monoclinic (B-type) and hexagonal (A-type) phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the monoclinic to hexagonal phase transition at about 5.24 GPa. The mode Grüneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phases of SGO were calculated using pressure dependent Raman mode analysis. [ABSTRACT FROM AUTHOR]

Herein, diode characteristics of n‐MgxZn1−xO/p‐Si heterojunctions grown by pulsed laser deposition at different oxygen ambient pressures are investigated. It is found that the heterojunctions grown at lower oxygen growth pressure of 1.0 × 10−2 mbar and below do not show rectifying diode‐like behavior, whereas those grown at higher oxygen pressures at and above 2.5 × 10−2 mbar exhibit perfect diode‐like rectifying characteristics. The diode characteristics are found to improve significantly with increasing oxygen ambient pressure during the growth of MgxZn1−xO film. The current–voltage measurements show that the n‐MgxZn1−xO/p‐Si heterojunction diode grown at a higher oxygen ambient pressure of ≈1.0 × 10−1 mbar has the lowest reverse saturation current of ≈19 nA and highest rectification ratio of ≈1.4 × 104. The capacitance–voltage measurements reveal that the depletion layer width of heterojunction diodes increases manifold with increasing oxygen ambient pressure during the growth of MgxZn1−xO, which is understood in terms of decrease in carrier concentrations in the MgxZn1−xO thin films grown at higher oxygen ambient pressures. The n‐MgxZn1−xO/p‐Si heterojunction diodes, grown at high oxygen ambient pressures, with low reverse saturation current, high rectification ratio, and large depletion width may have potential application in wide‐bandgap nanoelectronic devices and UV enhanced photodetectors. [ABSTRACT FROM AUTHOR]

Multilevel cell (MLC) capability of a memory device is an attractive alternative to realise high integration density of memory arrays. In addition, power efficient memory cell along with MLC capability has huge potential in neuromorphic computing and data storage applications. In this study low power, high speed and 3-bit multilevel bipolar resistance switching operation is reported in TiO2 thin films where copper is used as counter electrode. On account of using an oxidisable electrode, low programming voltages (∼+0.2 V, −0.1 V) along with low reset current (∼10 µA) are observed, thereby ensuing low power (∼µW) memory operation. Additionally, observation of fast switching (∼250 ns) translated to ultra-low energy (∼pJ) consumption. By varying compliance current (IC) from 25 µA to 1.6 mA during the set process, eight distinct non-volatile resistance states are reliably obtained, which showed statistically significant and non-overlapping resistance distribution. The multilevel resistive switching in Cu/TiO2/Pt device is explained by considering filamentary the widening phenomenon in the electrochemical metallization memory cell. Numerical calculations revealed that increase in the diameter of the metallic conducting filament from ∼3 nm to 70 nm with increasing IC is accountable for multiple low resistance states. The results of this study are promising towards realisation of emerging memory devices with low operating power, fast switching operation and high spatial density. [ABSTRACT FROM AUTHOR]

Herein, it is shown that the UV photoresponse characteristics of MgZnO thin films deposited by pulsed laser deposition change rapidly with time if the films are exposed to ambient air and that the response can be stabilized significantly by depositing a thin capping layer of MgO on the surface of MgZnO thin film. The decay time of photocurrent in as‐deposited MgZnO thin films increases from 1.8 to 229 s and the value of peak responsivity increases by about three orders of magnitude as the film is exposed to air for about 106 s. On application of MgO capping layer, the decay time of the photocurrent marginally increases from ≈0.2 to ≈0.4 s and the value of peak responsivity increases only by one order of magnitude over the span of 106 s, thereafter showing tendency of saturation, implying much better stability in performance. The MgO capping layer is transparent to UV, but acts as a diffusion barrier for oxygen, stabilizing the UV photoresponse. [ABSTRACT FROM AUTHOR]

The increasing demand of energy harvesting and wearable electronics applications requires the development of flexible and highly durable piezoelectric nanogenerators (PENG). In this work, We have fabricated flexible ZnO:PVDF based PENGs for vibrational energy harvesting and shoe insole pedometer application s. ZnO nanorods were grown by hydrothermal method and incorporated into PVDF matrixes in the concentration range of 5–15 wt%. These homogeneous ZnO:PVDF composite films were sandwiched between Al electrodes to realize flexible free standing PENGs. The open circuit voltage (Voc), short circuit current (Isc) and instantaneous power density of PENGs increased from ∼ 4 V, 0.4 µA and 1.6 µW/cm2 to ∼ 14.6 V, 0.6 µA and 21.3 µW/cm2 respectively when ZnO nanorods concentration in PVDF increased from 0 to 10 wt% and decreased with further increase in ZnO nanorods concentration. The enhancement in output characteristics of ZnO:PVDF PENG with increasing ZnO concentration was attributed to β-phase crystallization of PVDF, which was confirmed by XRD and FTIR measurements. The deterioration in output characteristics beyond 10 wt% of ZnO nanorods concentration was explained considering the variation of dielectric constant and remnant polarization. The rectified output of the PENGs was effectively stored in various commercially available capacitors and used to power LEDs and stopwatch displays. The PENG with 10 wt% ZnO concentration was used to develop shoe insole pedometer which was interfaced with android based mobile application via Bluetooth. The shoe insole pedometer was successfully tested for 5000 steps at different walking frequencies ranging from 0.5 Hz to 2 Hz in the speed range of ∼ 1.4 km/h to 5.5 km/h. This study not only gives an insight into the mechanism of ZnO:PVDF based PENGs but also opens up their potential in vibration energy harvesting and shoe insole pedometer applications. • ZnO:PVDF based flexible piezoelectric nanogenerators (PENGs) were fabricated with variable ZnO nanofiller concentrations. • The variation of output performance of ZnO:PVDF based PENGs was studied with ZnO nanofiller concentrations. • The PENGs were able to power capacitors, LEDs, and LCDs. • A pedometer device has been fabricated using the ZnO:PVDF based flexible PENG sensor. [ABSTRACT FROM AUTHOR]

We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with nonoverlapping Set and Reset voltages, On/Off resistance ratio of ~104 and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of ~100 mW/cm². Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. [ABSTRACT FROM AUTHOR]