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Hard X-ray microscopy is a prominent tool suitable for nanoscale-resolution non-destructive imaging of various materials used in different areas of science and technology. With an ongoing effort to push the 2D/3D imaging resolution down to 10 nm in the hard X-ray regime, both the fabrication of nano-focusing optics and the stability of the microscope using those optics become extremely challenging. In this work a microscopy system designed and constructed to accommodate multilayer Laue lenses as nanofocusing optics is presented. The developed apparatus has been thoroughly characterized in terms of resolution and stability followed by imaging experiments at a synchrotron facility. Drift rates of ∼2 nm h−1accompanied by 13 nm × 33 nm imaging resolution at 11.8 keV are reported.

The semiconductor industry is moving toward a half-pitch of 7 nm. The required metrology equipment should be one order of magnitude more accurate than that. Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns that are one order of magnitude smaller than the measured features. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location and any magnification. The power spectral density of such pseudo-random test pattern is inherently flat, down to the minimum size of lines. Metrology systems add a cut-off of the spectra at high frequencies; the shape of the cut-off characterizes the system in its entire dynamic range. This method is widely used in optics, and has allowed optical systems to be perfected down to their diffraction limit. There were attempts to use the spectral method to characterize nanometrology systems such as SEMs, but the absence of natural samples with known spatial frequencies was a common problem. Pseudo-random test patterns with linewidths down to 1.5 nm were fabricated. The system characterization includes the imaging of a pseudo-random test sample and image analysis by a developed software to automatically extract the power spectral density and the contrast transfer function of the nanoimaging system.

We report on the characterization of a multilayer Laue lens (MLL) with large acceptance, made of a novel WSi2/Al bilayer system. Fabrication of multilayers with large deposition thickness is required to obtain MLL structures with sufficient apertures capable of accepting the full lateral coherence length of x-rays at typical nanofocusing beamlines. To date, the total deposition thickness has been limited by stress-buildup in the multilayer. We were able to grow WSi2/Al with low grown-in stress, and asses the degree of stress reduction. X-ray diffraction experiments were conducted at beamline 1-BM at the Advanced Photon Source. We used monochromatic x-rays with a photon energy of 12 keV and a bandwidth of ΔE/E=5.4·10(-4). The MLL was grown with parallel layer interfaces, and was designed to have a large focal length of 9.6 mm. The mounted lens was 2.7 mm in width. We found and quantified kinks and bending of sections of the MLL. Sections with bending were found to partly have a systematic progression in the interface angles. We observed kinking in some, but not all, areas. The measurements are compared with dynamic diffraction calculations made with Coupled Wave Theory. Data are plotted showing the diffraction efficiency as a function of the external tilting angle of the entire mounted lens. This way of plotting the data was found to provide an overview into the diffraction properties of the whole lens, and enabled the following layer tilt analyses.

We report on the fabrication and the characterization of a wedged multilayer Laue lens for x-ray nanofocusing. The lens was fabricated using a sputtering deposition technique, in which a specially designed mask was employed to introduce a thickness gradient in the lateral direction of the multilayer. X-ray characterization shows an efficiency of 27% and a focus size of 26 nm at 14.6 keV, in a good agreement with theoretical calculations. These results indicate that the desired wedging is achieved in the fabricated structure. We anticipate that continuous development on wedged MLLs will advance x-ray nanofocusing optics to new frontiers and enrich capabilities and opportunities for hard X-ray microscopy.

Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, each according to its designed width. The fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope.