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We demonstrated an ultra-sensitive terahertz virus detection method combined with virus-sized gold nanogaps filled with Al2O3. Large-area high-density 20 nm-gap rectangular loop structures, containing a resonant frequency in the terahertz range, were fabricated on a 4-inch wafer using atomic layer lithography. When target viruses with a 60 nm diameter were located on the nanogaps, we observed a significant redshift of the resonant peak already with an average number of about 100 viruses per unit loop due to the strong field confinement and enhancement near the gap. Furthermore, when the virus was tightly attached to an etched gap like a bridge connecting metals, its sensitivity is doubled compared to the unetched gap, which resulted in 400% more resonance frequency shift per single virus particle than our previous work. Full-wave simulations and theoretical calculations based on modal expansions were in good agreement with the experiments, revealing that the resonant transmission spectrum was mostly determined by the change in refractive index in a two-dimensional-like optical hotspot near the nanogap. A further step could be taken to increase sensitivity by tuning nanogap-loops to the absorption frequencies associated with the intermolecular vibrational modes of the viruses and fingerprinting them as well.

This paper presents an ultra-low-profile copper indium gallium selenide (CIGS) based solar cell integrated antenna with a high form factor. A tiny slot was etched from the solar cell to develop an ultra-low-profile solar-cell-integrated antenna. This tiny slot increases the form factor due to the small clearance area from the solar cell. A ground-radiation antenna design method was applied in which lumped elements were employed inside the tiny slot for antenna operation. Another substrate was used under the solar cell for designing the feeding structure with lumped elements connected to the tiny slot using via holes. A prototype was fabricated and measured to verify the operation of a built-in solar-cell antenna and validate the simulated results. The measured results demonstrate that the solar-cell-integrated antenna covers the entire frequency range of the Industrial Scientific Medical band, from 2.4 to 2.5 GHz, with a maximum gain of 2.79 dBi and radiation efficiency higher than 80% within the impedance bandwidth range. Moreover, the proposed design has an ultra-low-profile structure of only 0.0046 λo, where λo represents the free space wavelength at 2.45 GHz, and a high form factor of 99.1% with no optical blockage. The antenna and solar cell were designed to avoid affecting the performance of each other using the radio-frequency decoupler.

We investigated the variation of current density–voltage (J–V) characteristics of an organic solar cell (OSC) in the dark and at 9 different light intensities ranging from 0.01 to 1 sun of the AM1.5G spectrum. All three conventional parameters, short-circuit currents (Jsc), open-circuit voltage (Voc), and Fill factor (FF), representing OSC performance evolved systematically in response to light intensity increase. Unlike Jsc that showed quasi-linear monotonic increase, Voc and FF showed distinctive non-monotonic variations. To elucidate the origin of such variations, we performed extensive simulation studies including Shockley–Read–Hall (SRH) recombination losses. Simulation results were sensitive to defect densities, and simultaneous agreement to 10 measured J–V curves was possible only with the defect density of $$5 \times 10^{12} {\text{ cm}}^{ - 3}$$ 5 × 10 12 cm - 3 . Based on analyses of simulation results, we were able to separate current losses into SRH- and bimolecular-recombination components and, moreover, identify that the competition between SRH- and bimolecular-loss currents were responsible for the aforementioned variations in Jsc, Voc, and FF. In particular, we verified that apparent demarcation in Voc, and FF variations, which seemed to appear at different light intensities, originated from the same mechanism of dominance switching between recombination losses.

We propose a novel method for detecting microplastic particles in water using terahertz metamaterials. Fluidic channels are employed to flow the water, containing polystyrene spheres, on the surface of the metamaterials. Polystyrene spheres are captured only near the gap structure of the metamaterials as the gap areas are functionalized. The resonant frequency of terahertz metamaterials increased while we circulated the microplastic solution, as polystyrene spheres in the solution are attached to the metamaterial gap areas, which saturates at a specific frequency as the gap areas are filled by the polystyrene spheres. Experimental results were revisited and supported by finite-difference time-domain simulations. We investigated how this method can be used for the detection of microplastics with various solution densities. The saturation time of the resonant frequency shift was found to decrease, while the saturated resonant frequency shift increased as the solution density increased.

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Vertical heterostructures of graphene and MoS2 are realized by successive growth of MoS2 and graphene, each by chemical vapor deposition. The MoS2 coverage on graphene is controlled by ozone treatment of graphene, which affects the absorption and aggregation of the nucleation promoter perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) for MoS2 seeds on the graphene surface. Mostly single or bilayer MoS2 flakes are grown on graphene with negligible defects even after the ozone treatment and the high-temperature growth process (up to 650 °C). Efficient charge transfer in the grown heterostructures is observed in the photoluminescence and photoresponses of devices based on the heterostructures.

In this work, we demonstrated a phonon-polariton in the terahertz (THz) frequency range, generated in a crystallized lead halide perovskite film coated on metamaterials. When the metamaterial resonance was in tune with the phonon resonance of the perovskite film, Rabi splitting occurred due to the strong coupling between the resonances. The Rabi splitting energy was about 1.1 meV, which is larger than the metamaterial and phonon resonance line widths; the interaction potential estimation confirmed that the strong coupling regime was reached successfully. We were able to tune the polaritonic branches by varying the metamaterial resonance, thereby obtaining the dispersion curve with a clear anticrossing behavior. Additionally, we performed

We propose a theoretical model simulating ultrafast electron emission at the edge of a two-dimensional conducting sheet due to a strong field tunneling process in the presence of a static electric field. Under the assumption of a charge distribution following the square root law associated with a Sommerfeld half plane, the electric field was found to exhibit square-root dependence. The electron emission yield was estimated based on a Fowler-Nordheim tunneling, from which the resultant current flow was calculated by using the quasi-classical model. Importantly, we considered the number of the recoil electrons that do not contribute to the net current. We found a large variation in the nonlinearity of the power-dependence of the net field-emission yield; this is due to the combined contributions of the laser field irradiation and a static electric field. The validity of our model was confirmed based on experimental results obtained using devices with a nanometer-sized gap fabricated on a single layer of graphene.

Emerging nonvolatile resistive switching, also known as the memristor, works with a distinct concept that relies mainly on the change in the composition of the active materials, rather than to store the charge. Particularly for oxide-based memristors, the switching is often governed by the random and unpredicted temporal/spatial migration of oxygen defects, resulting in possessing limitations in terms of control over conduction channel formation and inability to regulate hysteresis loop opening. Therefore, site specific dynamic control of defect concentration in the active materials can offer a unique opportunity to realize on-demand regulation of memory storage and artificial intelligence capabilities. Here, high-performance, site-specific spatially scalable memristor devices are fabricated by stabilizing the conduction channel via manipulation of oxygen defects using electron-beam irradiation. Specifically, the memristors exhibit highly stable and electron-beam dose-regulated multilevel analog hysteresis loop opening with adjustable switching ratios even higher than 10

In this study, we proposed a fast and effective technique to remove residual poly(methyl methacrylate) (PMMA) after its use as a supporting layer for transferring graphene films on a large scale with high productivity. We utilized a methyl isobutyl ketone (MIBK) solution, which is commonly used to develop PMMA layers, for an e-beam lithography process. This was done because MIBK molecules tend to inflate the PMMA layer, weakening the link between PMMA and the graphene surface. Field-effect transistors were fabricated on the transferred graphene, with which we addressed the Dirac points and their carrier motilities. We observed that due to the reduced p-doping effects, the Dirac points were located closer to the zero-gate bias compared to those obtained using the acetone treatment. Finally, the average device mobility reached 5400 and 3900 cm2/Vs for holes and electrons, respectively. These values are more than five times the values obtained using the conventional acetone treatment.

Large-scale growth of mostly monolayer molybdenum disulfide (MoS2) on quartz, sapphire, SiO2/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS2 is monolayer with high quality and uniformity. The MoS2 field effect transistors based on the as-grown MoS2 exhibit carrier mobility of 1–2 cm2V−1s−1 and On/Off ratio of ~104 while showing large photoresponse. Our results provide a simple approach to realize MoS2 on various substrates for electronics and optoelectronics applications.

The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The flat-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band offset between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average.

Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. However, the on/off ratio and photoresponsivity of graphene are typically low. Transition metal dichalcogenides (e.g., MoSe2) are semiconductors with high photoresponsivity but lower mobility than that of graphene. Here, we propose a graphene/MoSe2 barristor with a high-k ion-gel gate dielectric. It shows a high on/off ratio (3.3 × 104) and ambipolar behavior that is controlled by an external bias. The barristor exhibits very high external quantum efficiency (EQE, 66.3%) and photoresponsivity (285.0 mA/W). We demonstrate that an electric field applied to the gate electrode substantially modulates the photocurrent of the barristor, resulting in a high gate tuning ratio (1.50 μA/V). Therefore, this barristor shows potential for use as an ambipolar transistor with a high on/off ratio and a gate-tunable photodetector with a high EQE and responsivity. An approach that enhances control over charge carrier movement in graphene-based transistors may be useful in applications such as bendable circuits and light sensors. The difference in current flow when a transistor turns from on to off plays a critical role in determining device performance. Bae Ho Park from Konkuk University in Seoul, South Korea, and colleagues report that stacking graphene on top of another two-dimensional (2D) film of molybdenum selenide can lead to larger on/off current ratios than conventional graphene transistors. Optical and electrical characterizations revealed that the interface between the 2D films created a potential barrier that blocked current flow in the device’s off state without compromising graphene’s mechanical flexibility. Using an external voltage to modulate current flow through the barrier region also allowed the stacked device to serve as a high-efficiency photodetector. we report a field-effect device with a graphene/MoSe2 channel layer and high-k ion-gel gate dielectric. The device shows a high carrier mobility (~247 cm2/V ∙ s), a high on/off ratio (3.3 × 104), and ambipolar behavior that are controlled by an applied gate voltage. The strong gating effect of the device results in higher external quantum efficiency (EQE) (66.3%), photoresponsivity (285.0 mA/W), and gate-tuning ratio (1.50 μA/V) compared to pristine devices. Therefore, our graphene/MoSe2 barristor device can be a suitable candidate for use in ambipolar transistors and gate-tunable broad-area photodetectors.

We investigated THz phonon-polaritons in a lead halide perovskite film with metamaterials. Rabi splitting occurred when we tune the metamaterial resonance with the phonon resonance of the perovskite film, due to the strong coupling between the resonances. The polaritonic branches exhibited the dispersion curve with a clear anti-crossing behavior as a function of the metamaterial resonance. Rabi splitting versus crystal volume fraction were obtained with in-situ THz spectroscopy in which we found a unique power-law scaling, depending on the crystal growth dimensions.

We investigate the effect of the effective substrate refractive index on the sensitivity of terahertz (THz) metamaterials for dielectric sensing by substrate etching. We found the effective refractive index near the metamaterials can be actively controlled by etching, allowing optimization of the sensitivity. Our experimental findings are in good agreement with finite element method (FEM) simulation results.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

This study investigates recent advances in photoelectron emission generated by irradiating ultrashort lasers on metallic nanostructures and low-dimensional carbon materials. Recently, primary focus has been on improving the efficiency of emitters, i.e. increasing the number of field-emitted electrons and their respective kinetic energies. An example of this is the modification of the conventional metal nanotip through adiabatic nanofocusing and various plasmonic metal structures, such as nanorods and bowtie antenna. The coherent emission control with two color irradiation enabled modulation in the emission yield. In addition, THz waves near the metallic nanostructure induced a highly accelerated, monochromatic energy. Alternative to metallic nanotips, carbon nanotubes are emerging as efficient photoelectron emitters, due to the large enhancement factor associated with their high aspect ratio and damage threshold. They particularly allowed the use of femtosecond light sources with a relatively short wavelength, resulting in the generation of photoelectrons with a narrow bandwidth. Additionally, electronic control over the single-walled nanotubes band structure added a degree of freedom for controlling the electron emission yield. Finally, we review the strong-field tunneling emission in graphene edge, with the emission yield showing an anomalous increase of nonlinear order, corresponding to the deep strong tunneling regime.

We demonstrate subcycle electron pulse generation in a nanogap of graphene when irradiated by a femtosecond laser pulse in the near-infrared region (800 nm). A strong photoinduced emission was prod...

Most microbial detection techniques require pretreatment, such as fluorescent labeling and cultivation processes. Here, we propose novel tools for classifying and identifying microorganisms such as molds, yeasts, and bacteria based on their intrinsic dielectric constants in the THz frequency range. We first measured the dielectric constant of films that consisted of a wide range of microbial species, and extracted the values for the individual microbes using the effective medium theory. The dielectric constant of the molds was 1.24–1.85, which was lower than that of bacteria ranging from 2.75–4.11. The yeasts exhibited particularly high dielectric constants reaching 5.63–5.97, which were even higher than that of water. These values were consistent with the results of low-density measurements in an aqueous environment using microfluidic metamaterials. In particular, a blue shift in the metamaterial resonance occurred for molds and bacteria, whereas the molds have higher contrast relative to bacteria in the aqueous environment. By contrast, the deposition of the yeasts induced a red shift because their dielectric constant was higher than that of water. Finally, we measured the dielectric constants of peptidoglycan and polysaccharides such as chitin, α-glucan, and β-glucans (with short and long branches), and confirmed that cell wall composition was the main cause of the observed differences in dielectric constants for different types of microorganisms.

We investigated operation of a planar MAPbI3 solar cell with respect to intensity variation ranging from 0.01 to 1 sun. Measured J-V curves consisted of space-charge-limited currents (SCLC) in a drift-dominant range and diode-like currents in a diffusion-dominant range. The variation of power-law exponent of SCLC showed that charge trapping by defects diminished as intensity increased, and that drift currents became eventually almost ohmic. Diode-like currents were analysed using a modified Shockley-equation model, the validity of which was confirmed by comparing measured and estimated open-circuit voltages. Intensity dependence of ideality factor led us to the conclusion that there were two other types of defects that contributed mostly as recombination centers. At low intensities, monomolecular recombination occurred due to one of these defects in addition to bimolecular recombination to result in the ideality factor of ~1.7. However, at high intensities, another type of defect not only took over monomolecular recombination, but also dominated bimolecular recombination to result in the ideality factor of ~2.0. These ideality-factor values were consistent with those representing the intensity dependence of loss-current ratio estimated by using a constant internal-quantum-efficiency approximation. The presence of multiple types of defects was corroborated by findings from equivalent-circuit analysis of impedance spectra.

Electrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated.

Nucleation and growth characteristics of HfO2 thin films on graphene are investigated using atomic layer deposition (ALD). Substantial delay (∼70 ALD cycles) in the nucleation of HfO2 films is observed during HfO2 ALD on graphene, which causes large leakage current in Au/HfO2/graphene capacitors at low HfO2 ALD cycles (

We demonstrated imaging of the depletion layer in a MoS2/graphene heterojunction fabricated by chemical vapor deposition and obtained their transport parameters such as diffusion length, lifetime, and mobility by using scanning photocurrent microscopy (SPCM). The device exhibited a n-type operation, which was determined by the MoS2 layer with a lower mobility. The SPCM revealed the presence of the depletion layer at the heterojunction, whereas graphene provided an excellent electrical contact for the MoS2 layer without resulting in a rectifying behavior, even if they were anchored within a very short range. The polarity of the photocurrent signal switched when we applied a drain–source bias voltage, from which we extracted the potential barrier at the junction. More importantly, a bias-dependent SPCM allowed us to simultaneously record the diffusion lengths of both majority and minority carriers for the respective MoS2 and graphene layers. By combining the diffusion lengths with the lifetimes measured by ...

We investigate the interaction of carbon nanotubes (CNTs) embedded in a polymer matrix [poly(methyl methacrylate) (PMMA)] with Ar plasma, which results in the formation of PMMA nanostructures, as CNTs act as an etching mask. Because of the large differences in the Ar ion sputtering yields between CNTs and PMMA, PMMA lines with the width comparable to that of CNTs and as high as 20 nm (for single-walled CNTs) or 80 nm (for multiwalled CNTs) can be obtained after repeated exposure of CNT/PMMA films to Ar plasma. We also follow the etching process by investigating changes in the IV characteristics and Raman spectra of CNTs after each exposure to Ar plasma, which shows progressive defect generations in CNTs while they maintain structural integrity long enough to act as the etching mask for PMMA underneath. We demonstrate that the PMMA nanostructure patterns can be transferred to a different polymer substrate using nanoimprinting.

We report an in situ characterization of transition-metal dichalcogenide (TMD) monolayers and twisted bilayers using a high-speed second-harmonic generation (SHG) imaging technique. High-frequency laser modulation and galvano scanning in the SHG imaging enabled a rapid identification of the crystallinity in the TMD, including the orientation and homogeneity with a speed of 1 frame/s. For a twisted bilayer MoS2, we studied the SHG peak intensity and angles as a function of the twist angle under a strong interlayer coupling. In addition, rapid SHG imaging can be used to visualize laser-induced ablation of monolayer and bilayer MoS2 in situ under illumination by a strong femtosecond laser. Importantly, we observed a characteristic threshold behavior, the ablation process occurred for a very short time duration once the preheating condition was reached. We investigated the laser thinning of the bilayer MoS2 with different twist angles. When the twist angle was 0°, the SHG decreased by approximately one-fourth of the initial intensity when one layer was removed. Conversely, when the twist angle was approximately 60° (the SHG intensity was suppressed), the SHG increased abruptly close to that of the nearby monolayer when one layer was removed. Precise layer-by-layer control was possible because of the unique threshold behavior of the laser-induced ablation.

We demonstrate all-optical switching of plasmonic resonance patterned on the carbon nanotube films supported on the silicon substrates. A considerable suppression of terahertz wave was observed in the transmission resonance, when the near-infrared femtosecond laser pulse is irradiated. A Fourier-transformed terahertz spectrum reveals that the resonance feature that was governed by the geometry of the slot antenna are almost completely removed with the laser irradiation having sufficiently high pulse energy reaching 18 μJ. A screening of terahertz field was analyzed in terms of the free carrier generation originating from the photoexcitation in semiconductor film.

We report a 47.1% efficiency improvement resulting from the combination of device-architecture modification and inclusion of poly(3-hexylthiophene-2,5-diyl) nanowires (P3HT NWs) in bulk heterojunction (BHJ) active layers (ALs). Modelling of ellipsometry spectra shows substantial changes in inhomogeneity and optical constants of BHJ ALs with P3HT-NW inclusion. Furthermore, finite-difference time-domain simulation results based on actual device structures with inhomogeneous AL models indicate that enhanced light harvesting is a main contributing factor to efficiency improvement. On the contrary, P3HT-NW inclusion has no significant effect on charge carrier collection, other than suppressing occurrence of cul-de-sac in hole-transport pathways and unfavourable indene-C60 bisadduct domains near top anodes.

Vibrational modes in the terahertz (THz) frequency range are good indicators of lead halide perovskite's crystallization phase. We performed real-time THz spectroscopy to monitor the crystallization kinetics in the perovskite films. First, THz absorptance was measured while the perovskite film was annealed at different temperatures. By analyzing the Avrami exponent, we observed an abrupt dimensionality switch (from 1D to 2D) with increasing temperature starting at approximately 90 °C. We also monitored the laser-induced crystallinity enhancement of the preannealed perovskite film. The THz absorptance increased initially, then subsequently decayed over a couple of hours, although the enhancement factor varies depending on the film crystallinity. In particular, the Avrami analysis implied that the light-induced crystallization was assisted by the 1D diffusion processes. The activation photon energy was measured at 2.3 eV, which indicated that enhanced crystallization originated from the photoinduced structural change of residual lead iodide at the grain boundary.

We demonstrate a significant enhancement in the sensitivity of split ring resonator terahertz metamaterial dielectric sensors by the introduction of etched trenches into their inductive-capacitive gap area, both through finite element simulations and in experiments performed using terahertz time-domain spectroscopy. The enhanced sensitivity is demonstrated by observation of an increased frequency shift in response to overlaid dielectric material of thicknesses up to 18 μm deposited on to the sensor surface. We show that sensitivity to the dielectric is enhanced by a factor of up to ~2.7 times by the incorporation of locally etched trenches with a depth of ~3.4 μm, for example, and discuss the effect of the etching on the electrical properties of the sensors. Our experimental findings are in good agreement with simulations of the sensors obtained using finite element methods.

We investigated the THz dielectric constant of a wide range of microbial species in conjunction with their cell wall compositions. In general, the dielectric constant of the molds was lower than that of bacteria, whereas the yeasts exhibited particularly high dielectric constants, which were higher than that of water. The measurement on the dielectric constants of peptidoglycan and polysaccharides such as chitin, $\alpha$-glucan, and $\beta$-glucans revealed that cell wall composition is the main cause of the observed differences in dielectric constants for different types of microorganisms.

In this study, we developed a rapid three-dimensional (3D) time-of-flight imaging tool for inspection of packaged semiconductor chips, using terahertz (THz) time-domain spectroscopy techniques. A high-speed THz system based on the optical sampling by cavity tuning technique is incorporated with a 2-axis galvano scanner to deliver a scanning speed of more than 100 Hz/pixel with a signal-to-noise ratio larger than 20 dB. Through the use of the Hilbert transformation, we reconstruct the 3D structure of the packaged chip in a nondestructive manner. Additionally, the use of frequency-selective imaging allows us to manipulate image resolution, the higher resolution was obtained when monitored using the higher frequency component. Further, using phase information, we were able to detect and identify defects in the packaged chip, such as the delamination area and epoxy-rich regions.

Optically controlled spectral-band selective terahertz (THz) modulators based on metal-organic hybrid metamaterials were investigated. An artificially structured material, which consists of two single split-ring resonators put together on the split gap side, was patterned on a silicon substrate to generate frequency-selective properties. An active layer of an organic thin film (fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester, also called PCBM) was deposited on the metamaterial-silicon structure for modulating the transmission of incident THz radiation. The metal-organic hybrid metamaterials enabled active control of spectral bands present in the transmission spectra of THz waves. In addition, the changes in the photo-excited carrier density due to the transfer of charges between the layers were quantitatively analyzed by simulation results.

We studied experimentally and theoretically the vertical range of the confined electric field in the gap area of metamaterials, which was analyzed for various gap widths using terahertz time-domain spectroscopy. We measured the resonant frequency as a function of the thickness of poly(methyl methacrylate) in the range 0 to 3.2 µm to quantify the effective detection volumes. We found that the effective vertical range of the metamaterial is determined by the size of the gap width. The vertical range was found to decrease as the gap width of the metamaterial decreases, whereas the sensitivity is enhanced as the gap width decreases due to the highly concentrated electric field. Our experimental findings are in good agreement with the finite-difference time-domain simulation results. Finally, a numerical expression was obtained for the vertical range as a function of the gap width. This expression is expected to be very useful for optimizing the sensing efficiency.

Graphene has emerged as a promising 2-dimensional (2D) material composed of a monolayer of carbon atoms, which is expected to be utilized for nano- and optoelectronic device applications. In order to fabricate high speed graphene transistors with low power consumption, the growth of insulating thin films with high dielectric constant (high-k) on graphene is essential. Atomic layer deposition (ALD) is one of the best deposition techniques to grow functional thin films, however, it is extremely challenging to grow high-k thin films on graphene by ALD because of the lack of surface functional groups (such as hydroxyl groups) on graphene. Here, we demonstrate that the graphene surface is fully covered by Al2O3 thin films (10–30 nm), with significantly reduced leakage current (decreased by a factor of ∼107), through simple surface treatment of the graphene in the ALD chamber prior to the deposition of the Al2O3 layer by ALD to provide surface nucleation sites on the graphene, without breaking vacuum and changi...