24 results on '"Chen, Kevin J."'
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2. Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
3. Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation between High-side and Low-side Transistors
4. Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation
5. Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs
6. Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device.
7. A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs
8. SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs
9. E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability
10. GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions.
11. Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack.
12. Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation.
13. Gate Reliability of Schottky-Type p -GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias.
14. 650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications.
15. GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits.
16. Monolithic Integration of Gate Driver and Protection Modules With P -GaN Gate Power HEMTs.
17. Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.
18. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.
19. GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping.
20. ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD.
21. Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices.
22. Threshold Voltage Instability of Enhancement-Mode GaN Buried p -Channel MOSFETs.
23. Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests.
24. RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure.
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