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This letter proposes an indirect power dissipation level short circuit protection (IPDL-SCP) method for silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). Due to differences between normal conducting and short-circuit (SC) conditions, this method is triggered by the voltage oscillation vss at the parasitic inductance (Lss) of the source and directly monitoring vds of SiC mosfet. For verification, the short circuit protection circuit is tested and proved functional on the SC test bench. Experimental results show that the protection circuit can respond to both hard switching fault (HSF) and fault under load (FUL), while the fastest response delays are 75 ns for HSF and 170 ns for FUL. Comparisons with other commonly used SC protection methods have also been made, which show that the proposed IPDL-SCP method has better performance in shorter protection delays. [ABSTRACT FROM AUTHOR]

Gate-oxide degradation has been one of the critical reliability concerns of silicon carbide (SiC) metal–oxide–semiconductor-field-effect transistors (mosfets), which could be monitored through aging-sensitive parameters. In this article, an online gate-oxide degradation monitoring method for planar SiC mosfets is proposed by extracting gate charge time at a specific range of gate voltage. It is based on the findings that the input capacitances of planar SiC mosfets change significantly over gate-oxide degradation, which is theoretically analyzed and experimentally verified. The capacitance variations are converted into the gate charge time as the new aging-sensitive parameter. The new parameter measurement circuit is proposed and integrated into the gate driver module. The article results indicate that the new parameter varies noticeably with gate-oxide degradation and the difference of this parameter caused by junction temperature is much smaller than that caused by degradation. Besides, the parameter is immune to package degradation and load current. The condition monitoring method can be implemented online since the parameter is extracted during the off-state of SiC mosfet devices, which does not affect normal operation. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

In this article, an online condition monitoring (CM) method is proposed for the bond wire degradation of insulated-gate bipolar transistor (IGBT) modules in a single-phase or three-phase three-level neutral-point-clamped (3LNPC) dc–ac, ac–dc converter. The proposed method has the ability to detect the whole IGBTs in a 3LNPC converter, based on finding the idle on-state IGBTs under the specific load current direction and switching sequence of a leg. The detection time is short (0.2 ms) and the influence of online CM on load current can be completely neglected as long as the insertion areas for CM test are chosen reasonably. Meanwhile, an advanced bond wire CM module is designed to conduct the CM test. This module can generate and inject the current pulse trains into IGBT modules, with the high current for CM test and low current for temperature-sensitive electrical parameter measurement, and sample the collector–emitter on-state voltage (VCE ON) stably and precisely. Finally, the experimental work was carried out to verify the effectiveness of the proposed method and the practicality of the developed CM module. [ABSTRACT FROM AUTHOR]

Condition monitoring is a cost-effective means to reduce the unscheduled maintenance cost of insulated gate bipolar transistor (IGBT) modules. The junction to case thermal resistance $R_{\mathrm {thjc}}$ is considered as a critical health indicator of IGBT module solder layer. However, thermal interface materials’ (TIMs) deterioration will not only reduce the heat dissipation performance but also affects the accuracy of $R_{\mathrm {thjc}}$ monitoring of IGBT modules. This article investigates the effect of thermal grease deterioration on $R_{\mathrm {thjc}}$ monitoring of IGBT module. First, it is found that the thermal grease deterioration will lead to the decrease of monitored $R_{\mathrm {thjc}}$ of IGBT module under the same health status of IGBT solder layer, despite that the thermal resistance of TIM increasing as deterioration of the TIM takes place. That is, the same monitored increment ratio of $R_{\mathrm {thjc}}$ caused by the solder fatigue may correspond to different health status of the IGBT module, which cannot accurately reflect its actual health status. Then, a compensation strategy for thermal resistance monitoring based on the TIM aging rate is proposed, which uses the established mapping relationship to decouple the negative coupling part of TIM degradation. The compensated thermal resistance can better reflect the actual health status of the IGBT module and approximately eliminate the negative impact. Finally, the feasibility of the proposed compensation strategy is verified by finite element model (FEM) analysis and experiments. [ABSTRACT FROM AUTHOR]

The existing research on voltage-source converter HVDC (VSC-HVDC) system stability mostly focuses on small-signal stability analysis methods. However, when large-signal disturbances occur, the intrinsic nonlinearity of the VSC-HVDC system becomes inevitable so that the small-signal studies are no longer valid. In this paper, a large-signal stability analysis method of the VSC-HVDC system is proposed based on the estimation of domain of attraction (DOA). This method can not only analyze the asymptotic stability of the operating point, but also answer the question of how large deviations from the operating point can be tolerated by the system. By using Takagi-Sugeno (T-S) fuzzy model and Lyapunov stability theorem, the DOA of the VSC-HVDC System at the operating point is estimated, and the large-signal stability of VSC-HVDC System is analyzed. On this foundation, the influence of system parameters on the large-signal stability is studied. The results can be used to guide the adjustment of system parameters to solve the problem of system instability. The time-domain simulations conducted in Matlab/Simulink are used to test the stability of the system under large-signal disturbance in the range of DOA. The simulation results verify the feasibility and effectiveness of the proposed method. [ABSTRACT FROM AUTHOR]

With the widespread application of lithium-ion battery packs, it calls for efficient balancing methods to improve the performance of these battery systems. The relevant research has focused on the design of equalization circuits and control strategies while neglecting quantitative analysis and comparison of battery active equalization structures from the systematic level. In this paper, we propose an improved system-theoretic modeling approach for active equalization structures that takes into account the battery's constraints, including equalization current rate and SOC operation range. Accordingly, the mathematical models of various active equalization structures are derived that can describe their equalization dynamic behavior. Then, the analytical algorithms are developed to estimate the balancing time of active equalization structures online. Finally, extensive numerical simulations are conducted to evaluate and compare the average performance of these equalization systems in term of equalization time. It then comes up with a comprehensive comparison among them. Consequently, the Multicell-to-Multicell (MC2MC) balancing structure benefits the fast balancing speed and the lowest sensitive to initial batteries’ SOCs. The global structure has the lowest implementation cost and the series structure benefits the simplest control. Moreover, the module-based structures have faster balancing speed when each module contains about 4–6 batteries. [ABSTRACT FROM AUTHOR]

In order to further improve the efficiency of dual-active-bridge (DAB) converter, a hybrid five-variable modulation scheme with minimal root mean square (rms) current is proposed in this article, which combines the traditional phase-shift and pulsewidth modulation schemes. By adopting the proposed optimal scheme, a wider zero-voltage switching (ZVS) operation range and lower rms current level are achieved simultaneously when compared with other modulation schemes, which significantly improves the efficiency of the DAB converter. Moreover, for the complexity of the proposed modulation scheme with five variables, the Fourier decomposition based analytical expressions are derived for the converter and a generalized performance analysis results are presented. Besides, in order to avoid the analysis error, especially at light-load condition, the optimization strategy takes the rms current as the optimal objective, which includes the eight harmonic component of the inductor current rather than just considers the fundamental component. And an offline particle swarm optimization algorithm is introduced to acquire the optimal operating points for the whole power range. To substantiate the effectiveness of the proposed modulation scheme, a comprehensive comparison among related works in terms of the rms value and ZVS range were carried out under various operation condition. Finally, a 1.2 kW experimental platform was built and the highest experimental efficiency under the proposed modulation scheme reaches 96.8%. [ABSTRACT FROM AUTHOR]

Light-emitting diodes (LEDs) are widely used in street lighting, landscape lighting, liquid crystal display (LCD) backlighting, healthcare, etc. As an important part of LED lighting products, LED driver plays a vital role in maintenance costs reduction, energy saving and lifetime prolongation. In this paper, a single-stage LED driver is proposed, which is integrated by a totem-pole bridgeless power factor correction (PFC) unit and several modular LCL-T resonant rectifiers. The totem-pole bridgeless PFC unit and the LCL-T resonant rectifiers are integrated by sharing switches, which can simplify the circuit and reduce the system cost. The output current can be regulated by applying the variable inductor control. Constant duty cycle and fixed switching frequency operation can be achieved as well. The operating principle and the performance of the proposed converter are analyzed in this paper. In addition, a precise parameter design method is proposed by considering the high-order harmonics. At last, an experimental prototype is established to validate the proposed parameter design and variable inductor control method. [ABSTRACT FROM AUTHOR]