1. The Effect of Sintering Temperature on the Microstructure and Electrical Properties of ZnO–Bi2O3 Varistor Ceramics.
- Author
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Tian, Jingjing, Wu, Yelin, Tian, Heng, Xu, Yonghao, Lu, Pengzhen, Zhao, Jiayang, and Zhang, Bo
- Subjects
TEMPERATURE effect ,MICROSTRUCTURE ,CERAMICS ,CRYSTAL grain boundaries ,DIELECTRIC loss ,PERMITTIVITY - Abstract
The effect of sintering temperature on the microstructure and electrical properties of ZnO–Bi
2 O3 varistor ceramics was studied in the present work. Results demonstrate that the Bi-rich phase ZnBi38 O60 is generated at the ZnO grain boundaries in the prepared varistor ceramics over a range of 850–1000°C. As the sintering temperature increases, the Bi-rich insulator layer tends to widen, and the average grain size increases to 13.22 μm. The switching field, breakdown strength ( E 1 mA ), and nonlinear coefficient (α) increase, while the leakage current density ( J L ) decreases, because of an increase in barrier height ( φ B ). In addition, the sintering temperature promotes a decrease in the dielectric constant ( ε a ) and an increase in dielectric loss. The ZnO–Bi2 O3 varistor ceramic sintered at 1000°C exhibits excellent overall electrical properties, with a switching field of 228.04 V/mm, E 1 mA of 379.76 V/mm, α of 6.02, J L of 140 μA/cm2 , φ B of 0.39 eV, and ε a of 172.87 at 1 kHz. [ABSTRACT FROM AUTHOR]- Published
- 2024
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