Search

Your search keyword '"Binder, A. T."' showing total 16 results
Start Over Author "Binder, A. T." Publication Year Range Last 3 years
16 results on '"Binder, A. T."'

2. Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors.

Author

Rummel, B. D., Cooper, J. A., Morisette, D. T., Yates, L., Glaser, C. E., Binder, A. T., Ramadoss, K., and Kaplar, R. J.

Subjects
WIDE gap semiconductors, CAPACITANCE measurement, DENSITY of states, CONSTANTS of integration, SURFACE potential, ELECTRIC capacity
Abstract

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C − ψ S technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. This work explores the primary sources of errors present in the C − ψ S technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1 / C S ∗ 2 vs ψ S plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1 / C S ∗ 2 vs ψ S plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
View/download PDF

3. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

Author

Mazumder, Sudip K., primary, Voss, Lars F., additional, Dowling, Karen M., additional, Conway, Adam, additional, Hall, David, additional, Kaplar, Robert J., additional, Pickrell, Gregory W., additional, Flicker, Jack, additional, Binder, Andrew T., additional, Chowdhury, Srabanti, additional, Veliadis, Victor, additional, Luo, Fang, additional, Khalil, Sameh, additional, Aichinger, Thomas, additional, Bahl, Sandeep R., additional, Meneghini, Matteo, additional, and Charles, Alain B., additional

Published
2023
Full Text
View/download PDF

5. Sarcoma Patients Admitted to the Intensive Care Unit (ICU): Predictive Relevance of Common Sepsis and Performance Parameters

Author

Striefler, Jana K, primary, Binder, Phung T, additional, Brandes, Franziska, additional, Rau, Daniel, additional, Wittenberg, Silvan, additional, Kaul, David, additional, Roohani, Siyer, additional, Jarosch, Armin, additional, Schäfer, Frederik M, additional, Öllinger, Robert, additional, Märdian, Sven, additional, Bullinger, Lars, additional, Eckardt, Kai-Uwe, additional, Kruse, Jan, additional, and Flörcken, Anne, additional

Published
2023
Full Text
View/download PDF

6. Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices

Author

Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Rummel, Brian D., Glaser, Caleb, Yates, Luke, and Kaplar, Robert J.

Abstract

This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride (GaN) devices. Viable edge termination methods in GaN are limited due to challenges with selective-area doping. We report on a study that determines the optimal charge in the junction termination extension (JTE) of a GaN-based p-n diode to aid in the design of multizone JTEs. Experimental results show a step-thickness offset compared to theoretical prediction, which is attributed to plasma-induced etch damage, as well as variation in passivation-related charge, surface charge, and doping profile variations. Results are supported by electroluminescence imaging, which confirms the match from theory to experiment.

Published
2024
Full Text
View/download PDF

7. (Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains

Author

Binder, Andrew T., primary, Allerman, Andrew A., additional, Glaser, Caleb E., additional, Yates, Luke, additional, Rummel, Brian D., additional, Smith, Trevor, additional, Dickerson, Jeramy R., additional, Steinfeldt, Jeffrey, additional, Pickrell, Gregory, additional, Sharps, Paul, additional, Kaplar, Robert J., additional, and Cooper, James A., additional

Published
2022
Full Text
View/download PDF

10. Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes

Author

Binder, Andrew T., primary, Pickrell, Greg W., additional, Allerman, Andrew A., additional, Dickerson, Jeramy R., additional, Yates, Luke, additional, Steinfeldt, Jeffrey, additional, Glaser, Caleb, additional, Crawford, Mary H., additional, Armstrong, Andrew, additional, Sharps, Paul, additional, and Kaplar, Robert J., additional

Published
2021
Full Text
View/download PDF

11. (Invited) Development of Vertical Gallium Nitride Power Devices for Use in Electric Vehicle Drivetrains

Author

Kaplar, Robert J., primary, Binder, Andrew T., additional, Yates, Luke, additional, Allerman, Andrew A., additional, Armstrong, Andrew M., additional, Crawford, Mary H., additional, Dickerson, Jeramy R., additional, Glaser, Caleb E., additional, Steinfeldt, Jeffrey, additional, Abate, Vincent M., additional, Smith, Michael L., additional, Pickrell, Gregory, additional, Sharps, Paul, additional, Flicker, Jack D., additional, Neely, Jason, additional, Rashkin, Lee, additional, Gill, Lee, additional, Monson, Todd, additional, Bock, Jonathan, additional, Subramania, Ganesh, additional, Scott, Ethan, additional, and Cooper, James A., additional

Published
2021
Full Text
View/download PDF

12. (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics

Author

Kaplar, Robert J., primary, Allerman, Andrew A., additional, Crawford, Mary H., additional, Gunning, Brendan P., additional, Flicker, Jack D., additional, Armstrong, Andrew M., additional, Yates, Luke, additional, Dickerson, Jeramy R., additional, Binder, Andrew T., additional, Steinfeldt, Jeffrey, additional, Abate, Vincent M., additional, Smith, Micheal L., additional, Pickrell, Gregory, additional, Sharps, Paul, additional, Anderson, Travis J., additional, Gallagher, James, additional, Jacobs, Alan G., additional, Koehler, Andrew, additional, Tadjer, Marko J., additional, Hobart, Karl D., additional, Ebrish, Mona, additional, Porter, Matthew, additional, Zeng, Ke, additional, Chowdhury, Srabanti, additional, Ji, Dong, additional, Aktas, Ozgur, additional, and Cooper, James A., additional

Published
2021
Full Text
View/download PDF

13. (Invited) Prospects for MOCVD Growth of GaN for 10kV Power PN Diodes

Author

Allerman, Andrew A., primary, Crawford, Mary H., additional, Armstrong, Andy M, additional, Yates, Luke, additional, Dickerson, Jeramy R., additional, Binder, Andrew T., additional, Kaplar, Robert J., additional, Steinfeldt, Jeff, additional, Smith, Micheal L., additional, and Abate, Vincent M., additional

Published
2021
Full Text
View/download PDF

15. (Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices.

Author

Yates, Luke, Binder, Andrew T., Rice, Anthony, Armstrong, Andrew M., Steinfeldt, Jeffrey, Abate, Vincent M., Smith, Michael L., Rummel, Brian D., Glaser, Caleb E., Allerman, Andrew A., Crawford, Mary H., Gunning, Brendan P., Aktas, Ozgur, Anderson, Travis J., Hobart, Karl D., Koehler, Andrew, Jacobs, Alan G., Gallagher, James C, Mahadik, Nadeemullah, and Tadjer, Marko

Published
2023
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results