(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes.

Details

Language :

English

ISSN :

10918213

Volume :

MA2023-02

Issue :

1

Database :

Complementary Index

Journal :

ECS Meeting Abstracts

Publication Type :

Periodical

Accession number :

175491124

Full Text :

https://doi.org/10.1149/MA2023-02351688mtgabs