Search

Your search keyword '"Christoforos G. Theodorou"' showing total 5 results
Start Over Author "Christoforos G. Theodorou" Publication Year Range Last 3 years
5 results on '"Christoforos G. Theodorou"'

1. Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications.

Author

D. Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, and Perrine Batude

Published
2024
Full Text
View/download PDF

5. Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Author

Christoforos G. Theodorou, F. Balestra, Gerard Ghibaudo, L. Contamin, Mikael Casse, F. Serra di Santa Maria, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and balestra, francis

Subjects
Materials science, business.industry, Scattering, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Gate length, Silicon on insulator, Limiting, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, MOSFET, Materials Chemistry, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, business, ComputingMilieux_MISCELLANEOUS
Abstract

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is carried out down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only needed to fit the device characteristics versus temperature for long channel devices. Instead, in short channels, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased presence of neutral defects close to source/drain ends whatever the temperature.

Published
2022

Catalog

Books, media, physical & digital resources
See catalog results