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As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra capping layer deposition, post-growth annealing and wake-up effect are usually required to arouse the ferroelectricity in HfO2 based thin films, resulting in the increase of complexity for sample synthesis and the impediment of device application. In this study, the ferroelectricity is observed in non-capped dopant-free HfO2 thin films prepared by pulsed laser deposition (PLD) without post-growth annealing. By adjusting the deposited temperature, oxygen pressure and thickness, the maximum polarization up to 14.7 μC/cm2 was obtained in 7.4 nm-thick film. The fraction of orthorhombic phase, concentrations of defects and size effects are considered as possible mechanisms for the influences of ferroelectric properties. This study indicates that PLD is an effective technique to fabricate high-quality ferroelectric HfO2 thin films in the absence of chemical doping, capping layer deposition and post-growth annealing, which may boost the process of nonvolatile memory device application.

This paper reports the improvement of electrical, ferroelectric and endurance of Hf0.5Zr0.5O2 (HZO) thin-film capacitors by implementing W electrode. The W/HZO/W capacitor shows excellent pristine 2Pr values of 45.1 μC/cm2 at ±6 V, which are much higher than those of TiN/HZO/W (34.4 μC/cm2) and W/HZO/TiN (26.9 μC/cm2) capacitors. Notably, the maximum initial 2Pr value of W/HZO/W capacitor can reach as high as 57.9 μC/cm2 at ±7.5 V. These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode, allowing for enhancement of o-phase formation. Moreover, the W/HZO/W capacitor also exhibits higher endurance, smaller wake-up effect (10.1%) and superior fatigue properties up to 1.5 × 1010cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors. Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor. These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation, reduces oxygen vacancies, mitigates wake-up effect and improves reliability.

Recently, there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices. In this work, by using piezoresponse force microscopy and conductive atomic force microscopy, we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO3 thin films, e.g. neutral domain walls (NDW) and charged domain walls (CDWs). More interestingly, a specific type of nanoscale domains was also identified, which are surrounded by highly conductive circular CWDs. Similar nanoscale domains can also be controlled created and erasured by applying local field via conductive probe, which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 102. The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.

A pole‐converging X‐band low‐noise amplifier (LNA) using 130 nm CMOS technology is proposed. An on‐chip pole‐converging capacitor CPC is added between the gate and drain node of the common‐gate (CG) stage. The capacitor CPC combines with a noise‐reducing inductor L1 to converge poles into the desired band, which results in a pole‐converging effect and wideband performance. The proposed modified broadband simultaneous noise and input‐matching technique is adopted in triple‐cascode configuration to realize good input matching and a low noise figure (NF). Measurement results exhibit a flat maximum power gain of 17.6 dB from 8 to 12 GHz and a reverse isolation over 60 dB within the desired bandwidth along with an NF ranging from 1.5 to 3.6 dB. The LNA core dissipates 17 mW from 2.4 V supply, and the chip size occupies 1.1 × 0.9 mm2 including all pads. The simulated and measured results show good agreement from 8 to 12 GHz.

Compared to electrochemical energy storage, dielectric thin film-based capacitors possess the advantages of higher voltage stability and higher break-down voltage as well as lower leakage current etc. Since HfO2 films are compatible to microelectronic process and its ferroelectricity is strategically important in memory device, the realization of their excellent energy storage comparable or better than those perovskite oxides will broaden their applications in microelectronic devices. In this work, to combine the merits of relaxor-ferroelectric and antiferroelectric, we experimentally demonstrate that a superparaelectric-like relaxor antiferroelectric behavior can be realized in the HfO2-based thin films and corresponding recoverable energy density over 100 J cm-3 can be achieved at efficiency higher than 80% as well as extremely high dielectric strength > 6 MV cm-1, compared to perovskite oxide materials. This is a record high energy density in all reported HfO2-based energy storage thin films, and beyond that, we also demonstrate their superfast charging/discharging as a capacitor. Targeting at high-speed supercapacitor applications in integrated circuit, HfO2-based dielectric may win the competition with perovskite oxides in terms of dielectric breakdown strength and charging/discharging speed etc. Our fundamental understanding of the physics behind also enriches the knowledge of materials science and dielectric physics.

FeCo thin films with high saturation magnetization (4 πMs) can be applied in high-frequency electronic devices such as thin film inductors and microwave noise suppressors. However, due to its large magnetocrystalline anisotropy constant and magnetostrictive coefficient of FeCo, the coercivity (Hc) of FeCo films is generally high, which is detrimental to the soft magnetic properties. Meanwhile, the thickness and deposition temperature have significant effects on the coercivity and saturation magnetization of FeCo films. In this paper, FeCo thin films with different thicknesses were prepared by magnetron sputtering at different temperatures. The effects of thickness and deposition temperature on the microstructure and magnetic properties of FeCo thin films were systematically studied. When the film thickness increases from 50 nm to 800 nm, the coercivity would decrease from 309 Oe to 160 Oe. However, the saturation magnetization decreases from 22.1 kG to 15.3 kG. After that, we try to further increase the deposition temperature from room temperature (RT) to 475 °C. It is intriguing to find that the coercivity greatly decreased from 160 Oe to 3 Oe (decreased by 98%), and the saturation magnetization increased from 15.3 kG to 23.5 kG (increased by 53%) for the film with thickness of 800 nm. For the film with thickness of 50 nm, the coercivity also greatly decreased from 309 Oe to 10 Oe (decreased by 96%), but the saturation magnetization did not change significantly. It is contributed to the increase of deposition temperature, which will lead to the increase of grain size and the decrease of the number of grain boundaries. And the coercivity decreases as the number of grain boundaries decreases. Meanwhile, for the thicker films, when increasing the deposition temperature the thermal stress increases, which changes the appearance of (200) texture, and the saturation magnetization increases. Whereas, it has a negligible effect on the orientation of thin films with small thickness (50 nm). This indicates that high-temperature deposition is beneficial to the soft magnetic properties of FeCo thin films, particularly for the films with larger thickness. This FeCo thin film with high saturation magnetization and low coercivity could be an ideal candidate for high-frequency electronic devices.

Ferroelectrics with negative capacitance effect can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of the Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in the ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effect can be controlled by imposing various epitaxial compressive strain. The expansion of negative curvature region in polarization-energy landscape under compressive strain is responsible for the tunable negative capacitance. Our work paves the way for fabricating low power devices and further reducing energy consumption in electronics.

Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET). The FE-PS-NET, constituted by ferroelectric photosensors (FE-PSs) with tunable photoresponsivities, is capable of simultaneously capturing and processing images. In each FE-PS, self-powered photovoltaic responses, modulated by remanent polarization of an epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 layer, show not only multiple nonvolatile levels but also sign reversibility, enabling the representation of a signed weight in a single device and hence reducing the hardware overhead for network construction. With multiple FE-PSs wired together, the FE-PS-NET acts on its own as an artificial neural network. In situ multiply-accumulate operation between an input image and a stored photoresponsivity matrix is demonstrated in the FE-PS-NET. Moreover, the FE-PS-NET is faultlessly competent for real-time image processing functionalities, including binary classification between ‘X’ and ‘T’ patterns with 100% accuracy and edge detection for an arrow sign with an F-Measure of 1 (under 365 nm ultraviolet light). This study highlights the great potential of ferroelectric photovoltaics as the hardware basis of real-time machine vision.

Exotic topological domains in BiFeO3 nanoislands have attracted much attention regarding their potential applications in advanced electronic devices. Here, different from the earlier reported disordered distributed BiFeO3 nanoislands formed by a self-assembly method, we fabricated an ordered BiFeO3 nanoisland array by mask-assisted pulsed laser deposition on a SrTiO3 substrate, which exhibits a center-converged in-plane polarization component and a monodomain pattern along the vertical direction. Such center-type quad-domain structures exhibit high stability, maintaining their topological structures after heating to 250 °C and subsequently cooling to room temperature. Moreover, they can be switched by applying a scanning electric field and recovered by applying a heating and cooling process. Observing this topological structure in BiFeO3 nanoislands might provide a suitable platform for further exploration of its topological phase transition properties, new functions, and potential applications.

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order–disorder transition induced polar nanoregions have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us to overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

Capacitive deionisation (CDI), as a novel electrochemical technology, has attracted a fast-growing research interest over the past years. However, the single function of salt removal limits further development of conventional CDI systems. Herein, we propose a multi-function CDI device, which can achieve the electrochemical desalination, degradation of organic pollutants and removal of heavy metal ions through the redox electrocatalytic deionisation technology. Sulphur-doped reduced graphene oxide (S@rGO) is utilised as the anode to catalyse the degradation of rhodamine B. The Pt-coated graphite paper is used as a cathode for the removal of dichromate ions by the electro-reduction process. The voltage plateau of S@rGO is reduced by ∼0.35 V compared with the pure carbon cloth electrode, indicating the effectiveness of S@rGO as the catalyser. The salt feed is desalted to ∼0.74 mS·cm−1 level at a current density of 1 mA·cm−2. The degradation efficiency of rhodamine B (RhB) and potassium dichromate are 99.1% and 55.3%, respectively. The effects of different current densities and cycling are also investigated. This work is significant for the multi-functional process of water treatment and the device design. : The single function of salt removal limits the further development of the CDI system. A multi-function CDI device is proposed to achieve electrochemical desalination, organics degradation and dichromate ion removal.

Multiferroic materials have attracted increasing attention for developing multi-effect coupling between different physical properties and exploring the possibility of environmental application. In this work, La doped bismuth ferrite (BiFeO3)-based multiferroics (La-BFOs) were synthesized to achieve a strong magnetic response and high piezo-photocatalytic activity. When applying solar light and mechanical vibration on La-BFOs dispersing in the wastewater, 94.5% of carbamazepine (CBZ) was piezo-photocatalytically degraded in 30 min, and the reaction constant was 2.2 times of the sum of photocatalysis and piezocatalysis. This synergistic enhancement was ascribed to that the internal piezoelectric field of La-BFOs tailored the structure of energy band and boosted the separation of photo-generated carriers to produce more reactive species for pollutants removal. The saturation magnetization value of 6.6 emu/g endowed catalysts with an excellent recyclability that can be magnetically separated from the reaction solution, and a satisfactory catalytic reproducibility that more than 90% of CBZ can be removed in ten times of consecutive cycling tests. The present study opens the perspective of combining magnetic, piezoelectric and photoexcitation functionalities of catalyst in water purification through utilizing green energies in the nature, delivering a scientific and technological importance to achieve a sustainable and economic environment.

The magnetic anisotropy of SmCo-based permanent magnetic thin films are generally controlled by introducing buffer layer or heating substrate. However, the design for the multi-layer thin film system is complicated and the thickness of SmCo is limited due to a short range of interfacial stress/strain between the buffer layer and SmCo layer. In this work, the effects of temperature gradients, generated by RTP (rapid thermal process), on the magnetic anisotropy of the SmCo-based films were systematically investigated. The results show that the as-deposited films exhibit amorphous state. The out-of-plane coercivity of RTP-treated films is strongly correlated with the heating rate, and its optimum value (2810 Oe) is larger than that of the CTA (conventional thermal annealing) treated films (1670 Oe). For the RTP-treated films, the intensity of characteristic diffraction peaks for in-plane oriented SmCo5 (200) and Sm2Co17 (300) decreases, together with reducing the roughness. Besides, the grain size is finer and the contrast of magnetic domains becomes stronger for the RTP-treated films due to that the easy axis of SmCo5/Sm2Co17 phase gradually changes from in-plane to out-of-plane direction. It is suggested that the RTP treatment with a shorter annealing time has beneficial effects on obtaining finer microstructure and improving the out-of-plane magnetic anisotropy of the SmCo-based films. This work provides a novel way to control the magnetic anisotropy via annealing temperature gradients for permanent magnetic thin films, compared with conventional methods, to induce the magnetic anisotropy.

Reliable detection of antiferromagnetic (AFM) structures remains an open issue in experiments, although these structures such as skyrmions are suggested to play an important role in future spintronic applications. In this work, we theoretically proposed an alternative method to localize the AFM skyrmions along the direction of driving force through tuning magnetic anisotropy barriers by linear lattice defect design. The dependence of the depinning current on the magnitude and width of the defects and temperature is numerically investigated by solving the Landau-Lifshitz-Gilbert equation and also derived based on the Thiele’s theory. The stable pinning of the skyrmion for certain ranges of the injected current is clearly demonstrated, which suggests an effective way in localizing the skyrmion. Based on the calculated results, we propose a method of precise track-selecting of the AFM skyrmions, which are meaningful for future two- and three- dimensional AFM spintronic device design.