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112 results on '"Fan, Shoushan"'

14. Microheater Chips with Carbon Nanotube Resistors

Author

Zhao, Zhongyuan, primary, Zhao, Jie, additional, Liang, Liang, additional, Zhou, Yushi, additional, Mei, Zhen, additional, Li, Yuheng, additional, Zhou, Zuoping, additional, Zhang, Lina, additional, Fan, Shoushan, additional, Li, Qunqing, additional, and Wei, Yang, additional

Published
2024
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15. Engineering van der Waals Contacts by Interlayer Dipoles

Author

Zhou, Zuoping, primary, Lin, Jun-Fa, additional, Zeng, Zimeng, additional, Ma, Xiaoping, additional, Liang, Liang, additional, Li, Yuheng, additional, Zhao, Zhongyuan, additional, Mei, Zhen, additional, Yang, Huaixin, additional, Li, Qunqing, additional, Wu, Jian, additional, Fan, Shoushan, additional, Chen, Xi, additional, Xia, Tian-Long, additional, and Wei, Yang, additional

Published
2024
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16. Two-Dimensional Vertical Transistor with One-Dimensional van der Waals Contact

Author

Mei, Zhen, Li, Xuanzhang, Liang, Liang, Li, Yuheng, Zhao, Zhongyuan, Zhou, Zuoping, Li, Qunqing, Fan, Shoushan, Wang, Jiaping, and Wei, Yang

Abstract

Two-dimensional (2D) materials enable vertical field effect transistors (VFETs), which provide an alternative path for scaling down the channels of transistors. The challenge is the short channel effect when the thickness of the 2D channel decreases to ∼10 nm. Here, we show that a VFET with an ultrashort channel can be accomplished by employing a semimetal carbon nanotube (CNT) as a 1D van der Waals (vdW) contact. The CNT-VFETs with 5–10 nm MoS2channels exhibit high on/off ratios exceeding 105, low subthreshold swing values of 160–120 mV/dec, and high current densities over 104A/cm2. Such a switch even works with an ∼ 3.4 nm thick channel. The excellent comprehensive performance can be ascribed to the reduced short channel effect as the sub-2 nm CNT contact has weaker electrostatic screening to the gate, a reduced Fermi level pinning effect, and a highly tunable barrier. The VFETs with 1D vdW contacts hold great promise for ultrascaled transistors and are prospective in future nanoelectronics and nano-optoelectronics.

Published
2024
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21. Challenges and Advances in Wide‐Temperature Electrolytes for Lithium‐Ion Batteries.

Author

Hong, Zixin, Tian, Hui, Fang, Zhenhan, Luo, Yufeng, Wu, Hengcai, Zhao, Fei, Li, Qunqing, Fan, Shoushan, and Wang, Jiaping

Subjects
LITHIUM-ion batteries, ELECTROLYTES, HIGH temperatures, ENERGY density, FRIENDSHIP
Abstract

Lithium‐ion batteries (LIBs) have gained widespread attention due to their numerous advantages, including high energy density, prolonged cycle life, and environmental friendliness. Nevertheless, their electrochemical performance deteriorates rapidly under extreme temperature conditions, accompanied by a series of safety issues. Electrolyte optimization has emerged as a crucial and feasible strategy to expand the operational temperature range of LIBs. This review comprehensively summarizes the challenges, advances, and characterization methodologies of electrolytes at both subzero and elevated temperatures. Initially, it discusses the degradation mechanisms of different types of electrolytes at extreme temperatures, integrates recent advances, and offers insights into future research directions. Subsequently, various experimental techniques are systematically presented to evaluate the fundamental physical properties, stability, and dynamic behaviors of electrolytes in non‐ambient environments. Finally, it also provides relevant computational methods across the electronic, molecular, and macroscopic scales, and explores the application of high‐throughput techniques in this field. This review offers valuable guidance for breaking the working temperature limits of electrolytes and promoting the development of next‐generation LIBs. [ABSTRACT FROM AUTHOR]

Published
2024
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26. Direct Monitoring of Li 2 S 2 Evolution and Its Influence on the Reversible Capacities of Lithium‐Sulfur Batteries

Author

Luo, Yufeng, primary, Fang, Zhenhan, additional, Duan, Shaorong, additional, Wu, Hengcai, additional, Liu, Haitao, additional, Zhao, Yuxing, additional, Wang, Ke, additional, Li, Qunqing, additional, Fan, Shoushan, additional, Zheng, Zijian, additional, Duan, Wenhui, additional, Zhang, Yuegang, additional, and Wang, Jiaping, additional

Published
2023
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27. Carbon nanotube electron blackbody and its radiation spectra

Author

Zhang, Ke, primary, Chen, Guo, additional, Zhou, Shaohua, additional, Yuan, Zi, additional, Gu, Xu, additional, Zhou, Duanliang, additional, Wang, Yuan, additional, Gao, Xinyu, additional, Ma, Yucheng, additional, Xu, Runzhe, additional, Bai, Zaiqiao, additional, Liu, Peng, additional, Yang, Lexian, additional, Zhou, Shuyun, additional, Fan, Shoushan, additional, and Jiang, Kaili, additional

Published
2023
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30. Graphene Microheater Chips for In Situ TEM

Author

Zhao, Jie, primary, Liang, Liang, additional, Tang, Shiyi, additional, Zhang, Guangqi, additional, Su, Yi, additional, Zhao, Yuxin, additional, Li, Mengjuan, additional, Zhang, Lina, additional, Fan, Shoushan, additional, Li, Qunqing, additional, and Wei, Yang, additional

Published
2022
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34. A high linearity and energy-efficient artificial synaptic device based on scalable synthesized MoS2.

Author

Zhao, Yuxin, Jin, Yuanhao, Wang, Xing, Zhao, Jie, Wu, Sanming, Li, Mengjuan, Wang, Jiaping, Fan, Shoushan, and Li, Qunqing

Abstract

Synaptic devices based on 2D materials are being considered as potential solutions to mimic the behavior of synapses in neuromorphic computing. However, a scalable and CMOS complementary fabrication method of low-power-consumption 2D synaptic devices remains an important issue that hinders its actual use in neuromorphic computing applications. Here, we report a lateral memristor with high-linearity analog resistive switching behavior based on a large-scale atomic layer deposition (ALD) synthesized MoS2 film. The stable analog resistive switching behavior of the device is proved to be modulated by lateral conductive filaments that are formed reproducibly by electric field-induced oxidation, which avoids the dependence of conventional lateral memristors on randomly occurring grain boundaries. The high linear weight update behavior (α = 1.07) in this device significantly improves the recognition accuracy in neural networks, and low power consumption (<0.3 μW) was also achieved, thus making it suitable for large-scale integrated neuromorphic circuit applications. This work demonstrates a new resistive switching phenomenon in lateral 2D material devices and shows that ALD-synthesized MoS2 has considerable potential as a scalable fabrication method for neuromorphic computing devices. [ABSTRACT FROM AUTHOR]

Published
2023
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35. Direct Monitoring of Li2S2 Evolution and Its Influence on the Reversible Capacities of Lithium‐Sulfur Batteries.

Author

Luo, Yufeng, Fang, Zhenhan, Duan, Shaorong, Wu, Hengcai, Liu, Haitao, Zhao, Yuxing, Wang, Ke, Li, Qunqing, Fan, Shoushan, Zheng, Zijian, Duan, Wenhui, Zhang, Yuegang, and Wang, Jiaping

Subjects
LITHIUM sulfur batteries, CHEMICAL reduction, CHEMICAL reactions, ELECTROLYTIC reduction, LITHIUM, TRANSITION metal oxides
Abstract

The polysulfide (PS) dissolution and low conductivity of lithium sulfides (Li2S) are generally considered the main reasons for limiting the reversible capacity of the lithium‐sulfur (Li‐S) system. However, as the inevitable intermediate between PSs and Li2S, lithium disulfide (Li2S2) evolutions are always overlooked. Herein, Li2S2 evolutions are monitored from the operando measurements on the pouch cell level. Results indicate that Li2S2 undergoes slow electrochemical reduction and chemical disproportionation simultaneously during the discharging process, leading to further PS dissolution and Li2S generation without capacity contribution. Compared with the fully oxidized Li2S, Li2S2 still residues at the end of the charging state. Therefore, instead of the considered Li2S and PSs, slow electrochemical conversions and side chemical reactions of Li2S2 are the determining factors in limiting the sulfur utilization, corresponding to the poor reversible capacity of Li‐S batteries. [ABSTRACT FROM AUTHOR]

Published
2023
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47. Reconfigurable Carbon Nanotube Barristor.

Author

Lu, Gaotian, Wei, Yang, Li, Xuanzhang, Peng, Ruixuan, Zhang, Guangqi, Mei, Zhen, Liang, Liang, Liu, Kai, Li, Qunqing, Fan, Shoushan, and Zhang, Yuegang

Subjects
INTEGRATED circuits industry, SCHOTTKY barrier, LOGIC circuits, SEMICONDUCTOR industry, ELECTRONIC equipment, CARBON nanotubes
Abstract

As the semiconductor industry enters the post‐Moore era, reconfigurability on the device level, that incorporates multifunction in a device unit to realize more complex systems with more compact logic gates, is a promising methodology to extend the development of integrated circuit industry. Here, a reconfigurable carbon nanotube (CNT) barristor is developed on the basis of a Schottky barrier (SB) CNT transistor. The device shows a significant rectifying characteristic and can be reconfigured to a forward rectifying mode or a backward rectifying mode by applying an appropriate gate voltage. The reconfigurability originates from the ambipolar characteristics of the CNT channel, and the rectification behaviors can be attributed to the drain‐induced self‐gating effect. Additional experiments reveal that it is the interfacial charge redistribution that plays the role of an additional gate on the SB near the drain. A gate‐controllable half‐wave rectifier has been fabricated by using the reconfigurable CNT barristor. The CNT barristor brings new functions to CNT electronic devices and also opens up a new methodology for future reconfigurable device design. [ABSTRACT FROM AUTHOR]

Published
2022
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48. Iodide-substitution-induced phase transition of chemical-vapor-deposited MoS2.

Author

Zhang, Tianfu, Zeng, Zimeng, Xiao, Xiaoyang, Huang, Zhongzheng, Zhao, Jie, Zhao, Yuxin, Jin, Yuanhao, Wang, Jiaping, Fan, Shoushan, and Li, Qunqing

Abstract

Molybdenum disulfide (MoS2)-based electronic devices, particularly field effect transistors, have outstanding performance. However, a large contact resistance between electrode metals and MoS2 limits the full potential of these devices. Here we report an effective, rapid, and convenient approach to inducing phase transitions of MoS2via treatment with a potassium iodide (KI) solution during device fabrication. The transition from the 2H to the 1T phase in monolayer MoS2 was confirmed using Raman spectroscopy and transmission electron microscope imaging. In electrical transport measurements of the MoS2 transistors subjected to the phase-transition treatment, the normalized on-state current was nearly 50 times greater than that of an untreated transistor. The treatment also resulted in a greater on–off ratio, better output characteristics and a significantly lower contact resistance owing to the phase transition of MoS2. Hence, we report a new method for inducing a phase transition of MoS2 and provide a reasonable mechanism for this phase transition, offering a new and efficient approach to improved MoS2 devices. [ABSTRACT FROM AUTHOR]

Published
2022
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