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B-doped ZnO (B-ZnO) microspheres have been fabricated on PET-ITO flexible substrate by hydrothermal method. The B atoms play an important role in the formation of ZnO microspheres. The results of first-principles calculations demonstrate that the B atoms prefer to occupy the octahedral interstice positions as the interstitial atoms, which can lead to the decrease of band gap. The B-ZnO/PET-ITO shows significantly enhanced efficiency of photocatalytic activities with good recyclable behavior. The corresponding mechanism is discussed. [ABSTRACT FROM AUTHOR]

• Scaly-like hollow SnSe nanotubes (NTs) were synthesized by a green and rapid solution method. • Light utilization efficiency is improved due to unique scaly-like hollow structure and large surface area of the SnSe NTs. • SnSe NTs infrared photodetector can realize efficient and stable IR light detection free of the external power. [Display omitted] SnSe nanotubes (NTs) have been successfully synthesized via a simple solution method. The as-synthesized tubular crystals with orthorhombic structure are composed of numerous scaly nanosheets which distributed hierarchically. The average diameter of the SnSe NTs is roughly 180 nm and length primarily concentrate in the range of 1–3 µm. It was found that Se nanowires were served as a template and as an only source of Se ion for the formation of SnSe NTs. Furthermore, a novel self-powered infrared photodetector (IRPD) established on the SnSe NTs with desirable detection performance was fabricated. Exposed to IR illumination of 830 nm, the SnSe NTs IRPD displays a maximal photocurrent density of 46.46 nA/cm2 and a rapid photoresponse, together with the rise time and decay time approach up to 0.174 s and 0.349 s, respectively. Meanwhile, it can be recognized that the SnSe NTs IRPD remain consistent and repeatable at zero voltage. Moreover, a plausible mechanism for IR detection based on the SnSe NTs IRPD are also discussed. [ABSTRACT FROM AUTHOR]

The structural and optical properties of In 0.20 Ga 0.80 N/Al x In y Ga 1− x − y N multiple quantum wells samples with varying Al content in barrier layers grown on sapphire substrates by metalorganic chemical vapor deposition have been investigated by means of high-resolution X-ray diffraction, Raman scattering measurements and temperature-dependent photoluminescence. Raman measurements verified the existence of In-rich clusters in ternary and quaternary layers. At 10 K and 300 K, the PL spectrum of each sample is dominated by a sharp emission peak arising from In 0.20 Ga 0.80 N well layers. The anomalous temperature-dependent S-shaped behaviors of emission energies have been observed, indicating the presence of localized states induced by the potential fluctuations in the quantum wells due to the inhomogeneous distribution of In-rich clusters. The degree of the localization effect and the transition temperatures between different temperature regions can be enhanced by increasing Al content in barrier layers. The improvement of the localized states emission has been observed at the lower energy side of band gap emission of quantum wells with increasing Al content. The origin of the deep localized states could be attributed to the larger quantum-confined Stark effect in the quantum wells with higher Al content. The recombination mechanism of carriers between band edge and localized states was proposed for interpreting of the emission characteristics. [ABSTRACT FROM AUTHOR]

The (In x Ga 1-x) 2 O 3 thin films were deposited on sapphire substrates by radio frequency magnetron sputtering with increasing sputtering pressure from 0.6 Pa to 1.6 Pa. X-ray diffraction analysis indicated In composition of (In x Ga 1-x) 2 O 3 thin films maintained constant with the increase of sputtering pressure and In content and bandgaps of (In x Ga 1-x) 2 O 3 thin films were estimated to be 6% and 4.78 eV by Vegard's law, respectively. The influence of sputtering pressure on structural and optical properties was discussed in detail. Especially, the origin of different emission of (In x Ga 1-x) 2 O 3 thin films was investigated. The role of V Ga defects on the green emission centered at about 550 nm had been clarified. The energy band diagram of (In x Ga 1-x) 2 O 3 thin film was also proposed with intrinsic defect levels. • In content of (In x Ga 1-x) 2 O 3 films is 6% for all sputtering pressure condition. • Defects play an important role in luminescence. • Green luminescence is related to gallium vacancies. [ABSTRACT FROM AUTHOR]