13 results on '"Vilcot, A."'
Search Results
2. Simulation and optimization of GaAs1-xPx/Si1-yGey/Ge triple junction solar cells.
- Author
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Azzououm, A. B., Aissat, A., and Vilcot, J. P.
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SOLAR cells , *CELL junctions , *PHOTOVOLTAIC power systems , *STRAIN energy , *SILICON alloys , *GERMANIUM - Abstract
This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm², Voc=1.27V, FF=88.42% and =38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn't exceed 1.5%. This study has enabled us to design a high-efficiency, low cost 3J solar cell. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
3. Effect of manganese concentration in the Cd1-xMnxTe/CdTe tandem structure on photovoltaic energy conversion
- Author
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Abdelkader Aissat, Mohamed Fathi, M. El bey, J.P. Vilcot, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
- Subjects
010302 applied physics ,Cd1-xMnxTe ,Materials science ,Organic solar cell ,business.industry ,Energy conversion efficiency ,Photovoltaic system ,02 engineering and technology ,Hybrid solar cell ,021001 nanoscience & nanotechnology ,7. Clean energy ,01 natural sciences ,Cadmium telluride photovoltaics ,Polymer solar cell ,photovoltaic ,Photovoltaic thermal hybrid solar collector ,[SPI]Engineering Sciences [physics] ,Optics ,Solar cell efficiency ,Energy(all) ,0103 physical sciences ,solar cells ,Optoelectronics ,0210 nano-technology ,business - Abstract
The photovoltaic electricity is obtained by direct conversion of sunlight into electricity by solar cells. The objective of this work is the study and simulation of a Tandem photovoltaic structure based on Cd1-xMnxTe as top material cell.This paper describes the optimization of energy efficiency for Cd1-xMnxTe thin films deposited by epitaxy on CdTe substrat. We present the impact of the manganese concentration in Cd1-xMnxTe thin films on solar cells performances. Our study includes simulation results to show the conversion efficiency and main performances factors as function of the manganese concentration.
- Published
- 2013
4. Effect of Manganese Concentration in the Cd1-xMnxTe/CdTe Tandem Structure on Photovoltaic Energy Conversion.
- Author
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Aissat, A., Bey, M. El, Fathi, M., and Vilcot, J.P.
- Abstract
Abstract: The photovoltaic electricity is obtained by direct conversion of sunlight into electricity by solar cells. The objective of this work is the study and simulation of a Tandem photovoltaic structure based on Cd
1-x Mnx Te as top material cell. This paper describes the optimization of energy efficiency for Cd1-x Mnx Te thin films deposited by epitaxy on CdTe substrat. We present the impact of the manganese concentration in Cd1-x Mnx Te thin films on solar cells performances. Our study includes simulation results to show the conversion efficiency and main performances factors as function of the manganese concentration. [Copyright &y& Elsevier]- Published
- 2013
- Full Text
- View/download PDF
5. Electrical and optical properties of InSb/GaAs QDSC for photovoltaic.
- Author
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Aissat, A., Benyettou, F., and Vilcot, J.P.
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PHOTOVOLTAIC power systems , *INDIUM antimonide , *GALLIUM arsenide , *OPTICAL properties of metals , *QUANTUM dots , *SOLAR cells - Abstract
This paper focuses on the simulation and optimization of electrical and optical properties such as current density-voltage (J-V ) , external quantum efficiency (EQE) and the photoluminescence spectra (PL) of InSb/GaAs quantum dot solar cell (QDSC). The InSb QDs have been inserted in the intrinsic region of p-i-n GaAs solar cell. Our results have been shown that 30 InSb/GaAs QD layers provide a relative enhancement of 22.35% and 29.30% of the short-circuit current and the efficiency, respectively. With the same number of the QD layers, the absorption range edge of low energy photons has been extended from 900 to 1400 nm. The electrical features obtained for InSb/GaAs QDSC have been compared with those obtained for InAs/GaAs QDSC in goal to show the better structure. The PL spectra has been also compared with experimental result for the same structure. Moreover, the QDSC has been optimized with respect to the thickness of QDs. The optimal conversion efficiency of 10 QD layers is improved from 14.85% to 18.30% by increasing the thickness of the QDs from 5 nm to 20 nm. [ABSTRACT FROM AUTHOR]
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- 2017
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6. Modeling and optimization of CdS/CuIn1−xGaxSe2 structure for solar cells applications.
- Author
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Arbouz, H., Aissat, A., and Vilcot, J.P.
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SOLAR cells , *CADMIUM sulfide , *COPPER indium selenide , *BAND gaps , *PHOTONS , *GALLIUM , *PHOTOVOLTAIC power generation - Abstract
This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photovoltaic applications. We took into consideration the effect of the gallium concentration and the temperature on the strain, band gap energy, absorption and efficiency of the structure. It has been demonstrated that increasing the gallium concentration increases the ban gap energy, while increasing temperature decreases it. These two parameters vary the efficiency significantly. For x = 30% and T = 300 K, the band gap energy is equal to 1.15 eV with a deformation of 0.5% and efficiency around 20%. We have also found that at this value of the band gap energy the structure absorbs most of the incident photons. Then to achieve a reliable cell based on CuInGaSe/CdS it is adequate to find a compromise between the gallium concentration in the alloy, the temperature and the strain. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
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7. Efficiency improvement of thin film CuIn1-xGaxSe2 structure for solar cells applications.
- Author
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Benahmed, A., Aissat, A., Ayachi, B., Sfina, N., Saidi, F., and Vilcot, J.P.
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SOLAR cells , *PHOTOVOLTAIC power systems , *THIN films , *SOLAR cell efficiency , *QUANTUM efficiency , *OPTICAL properties - Abstract
In this paper, the CuInGaSe 2 based solar cell optimization has been established. We have simulated the structural strain effect. The effect of gallium concentration on the optical properties and the quantum external efficiency EQE was investigated. We also optimized the concentration x at low defect densities. The optimal gallium concentration is 0.30. We obtained an efficiency of the CuIn 0.70 Ga 0.30 Se 2 absorber solar cell around 24% with a strain ɛ = 0.64% and material defects densities equal to 1.2x1015cm−3. This work has been validated by theoretical and experimental studies. This study allows us to find a compromise between concentration x and defect concentrations in order to improve the performance and high efficiency of the solar cell. • The effect of structural deformation has been studied and simulated. • The effect of gallium on the optical properties and EQE was investigated. • We optimized the x concentration at low defect concentrations. • An efficiency of the solar cell which is equal to 24% with ɛ = 0.6% was obtained. • This work is validated by a theoretical and experimental study. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
8. Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure.
- Author
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Aissat, A., Chenini, L., Laidouci, A., Nacer, S., and Vilcot, J.P.
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PHOTOVOLTAIC power systems , *SOLAR cell efficiency , *OPEN-circuit voltage , *REFLECTANCE , *SOLAR spectra , *ABSORPTION coefficients - Abstract
This study aims to investigate the different optical properties of the ZnSnN 2 absorber layer such as absorption, reflection and transmission coefficients. The effects of the ZnSnN 2 absorber layer thickness, temperature,and defect density on electrical parameters such as short circuit current density, open circuit voltage, fill factor and efficiency have also been studied in detail. These factors play an important role in the performance of the ZnO/CdS/ZnSnN 2 /Si/Mo structure. The highest efficiency of about 23.32 % is achieved without defects in the ZnSnN 2 absorber layer, under the 1-sun AM1.5 solar spectrum, by applying the flat band condition and considering the strain values of 0.37 % (ZnSnN 2 /Cds) and 7.17 % (ZnSnN 2 /Si). In addition to high efficiency, the ZnSnN 2 has a high absorption coefficient. This device will play a crucial role in optoelectronic applications. This structure is a promising candidate for low cost and high efficiency photovoltaic technology. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
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9. Modeling and optimization of CuIn1-xGaxSe2/Si1-yGey structure for solar cells applications.
- Author
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Boubakeur, M., Aissat, A., Chenini, L., Ben Arbia, M., Maaref, H., and Vilcot, J.P.
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PHOTOVOLTAIC power systems , *SOLAR cells , *COPPER indium selenide , *SOLAR cell efficiency , *OPEN-circuit voltage , *QUANTUM efficiency - Abstract
A combination of a Copper Indium Gallium Selenide (CIGS) and Silicon (Si) layer has been recognized as an excellent choice for producing heterojunction based solar cells with improved efficiency and low cost processing techniques. The quaternary compound CIGS and silicon (Si) regions exhibit a lattice mismatch of about 5%, which induces a strain and impacts the electronic characteristics of the CIGS/Si heterojunction solar cell. A new viewpoint suggests the integration of a silicon germanium (Si 1-y Ge y) layer in the CIGS/Si region to reduce the impact of lattice mismatch. The objective of this study is to investigate how different gallium and germanium concentrations (x Ga and y Ge) affect the following factors: lattice mismatch (ε) , critical thickness (h c) and absorption coefficient (α)of CIGS/SiGe based solar cells. It also aims to analyze how these concentrations impact the primary parameters used to evaluate solar cell performance such as external quantum efficiency, short circuit current density, fill factor, open circuit voltage and conversion efficiency. The simulation results agree well with the existing theoretical and experimental literature data, confirming the suitability of the physical characteristics employed in this numerical study. By tuning the concentrations of Gallium and Germanium, it is feasible to attain an efficiency of 24% owing to the lattice compensation phenomenon in Si 1-y Ge y layers. These findings hold significant implications for the development and advancement of solar cell technology, as well as for enhancing their conversion efficiency and commercialization. • A strain-compensated CIGS/Si structure was achieved by adding SiGe layer. • The incorporation of SiGe improves the absorbance and EQE of the CIGS solar cell. • The improvement of the solar performances of the CIGS is ensured by the SiGe layer. • Optimizing Ga, Ge concentrations makes it possible to achieve an efficiency of 24%. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
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10. Modeling and optimization of core/shell p-i-n Si/Si0.2Ge0.8 nanowire for photovoltaic.
- Author
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Benyettou, F., Aissat, A., Berbezier, I., and Vilcot, J.P.
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PHOTOVOLTAIC cells , *STRUCTURAL shells , *PIN diodes , *SILICON compounds , *NANOWIRES , *SOLAR cells , *QUANTUM efficiency - Abstract
In this work we propose a modeling and simulation of core/shell p-i-n Si/Si 0.2 Ge 0.8 nanowire for photovoltaic. In the first step of this work, we have compared the core/shell p-i-n homojunction Si and heterojunction Si/Si 0.2 Ge 0.8 Nanowire (NW) solar cell having a length of 3 μm and a radius of 0.19 μm, by studying their current-voltage and external quantum efficiency (EQE). Our results have shown that blending Silicon with 80% of Germanium enhances relatively the short circuit current and efficiency by 3.04% and 8.48% respectively. In other hand, the absorption edge of Silicon NW has extended from 1100 nm to 1200 nm, with a gain of EQE of 15% obtained in this range. In the second part, we have tried to optimize the Si/Si 0.2 Ge 0.8 structure, by varying their radius and length. The corresponding results have indicated that a radius of 0.28 μm and a length of 10 μm are the optimal geometric parameters for any optimization of such structure. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
11. Electrical properties of InAsP/Si quantum dot solar cell.
- Author
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Benyettou, F., Aissat, A., Djebari, M., and Vilcot, J.P.
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QUANTUM dots , *SOLAR cells , *PHOTOVOLTAIC power systems , *ABSORPTION , *SEMICONDUCTORS - Abstract
The electrical properties of InAsP/Si quantum dot solar cell (QDSC) are numerically studied and analyzed in this paper. Many effects like number of quantum dot (QD) layers inserted and Arsenic content of InAs x P 1-x on photovoltaic properties such as current density-voltage J-V and the external quantum efficiency (EQE) are investigated. Our results have been shown that the optimal Arsenic content is 0.6. With 30 InAsP/Si QDs layers, relative enhancements of about 7% and 6.70% of short-circuit current and efficiency are achieved, respectively. Otherwise, the absorption range edge of low energy photons was extended from 1120 to 1200 nm. This reveals that introduction of QDs in the intrinsic region of p -i- n Silicon (Si) solar cell enhances significantly the device characteristics beyond what has been reported for conventional semiconductor-based solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
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12. The doping effect on the properties of zinc oxide (ZnO) thin layers for photovoltaic applications.
- Author
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Aissat, A., Ghomrani, M.A., Bellil, W., Benkouider, A., and Vilcot, J.P.
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ZINC oxide , *PHOTOVOLTAIC power systems , *COPPER compounds , *THIN films , *DOPING agents (Chemistry) , *SOLAR cells - Abstract
In this study, we experimentally elaborated Copper- and Indium-doped Zinc Oxide (Cu: ZnO and In: ZnO) thin films at different temperatures (T 1 = 480 °C and T 2 = 520 °C), the doping ratio were varied between 0% and 8%. Using a low cost solution-based chemical deposition, we have developed a ZnO thin film deposition process that offers fine-control of the surface morphology. It consists in spraying a volatile compound of the material to be deposited on a substrate maintained at high temperature to cause a chemical reaction in order to form at least one solid product. Therefore, the proposed ZnO doped layer is highly promising for applications for the next-generation solar cells. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
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13. Etude de la passivation de surface du silicium cristallin type P par dépôt de couches atomiques d'alumine pour application aux cellules solaires à haut rendement
- Author
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Pawlik, Matthieu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ecole Centrale de Lille, Jean-Pierre Vilcot, Cathy Sion, and Mathieu Halbwax
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Passivation ,Silicium cristallin ,ALD ,Cristalline Silicon ,Recombinaisons ,Al2O3 ,Photovoltaïque ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,MOS ,Photovoltaic ,Recombination - Abstract
The decrease of solar cell cost as well as the increase in their efficiency are main research topics since the photovoltaic market crisis in 2011. One of the main strategy is to move towards thinner solar cells, in order to decrease raw material consumption. However, the result is a higher impact of surface phenomena on cell characteristics because of a high influence of structure and electronic defects at the surface. These defects can be passivated by Al2O3 coated by PE-ALD (Plasma Enhanced-Atomic Layer Deposition) which has been shown to provide the best surface passivation on p-type silicon. In an as-deposited state, the passivation level of Al2O3 is very low and required an annealing treatment to be "activated". This phenomenon provides an increase of the minority carrier effective lifetime. This thesis founded by the ANR PROTERRA and BIFASOL projects with the financial support of the Ecole Centrale de Lille, focuses on the optimization of the deposition parameters of alumina with a deeper insight on the passivation activation phenomena on samples with and without emitter. The passivation analysis has been performed thanks to coupled lifetime (QSS and micro PCD), surface potential (Kelvin probe), electrical (C-V) and chemical (SIMS, XPS) characterizations. The origin of the chemical and field effect passivation has been determined within the Si/SiO2/Al2O3 stack. The dynamics of the hydrogen contained in bulk alumina is explained. The impact of a SiNx capping layer and a contact alloying anneal at 830°c for 3s is also investigated; La diminution du coût ainsi que l'augmentation du rendement des cellules solaires sont devenues les axes principaux de recherche depuis la crise qui a touché le marché du photovoltaïque en 2011. Une des principales stratégies est l’amincissement des cellules solaires dans le but de réduire les coûts des matériaux. Cependant, ceci diminue fortement le rendement de conversion suite à une plus forte influence des défauts structurels et électroniques, présents en surface. Ces défauts peuvent être « passivés » par l’Al2O3 déposé par technique PE-ALD. Ce matériau présente les meilleurs résultats de passivation de surface du silicium cristallin de type p. La couche de passivation nécessite un traitement thermique pour être effective. Ce phénomène se traduit par une augmentation de la durée de vie des porteurs de charge. Cette thèse, encadrée par les deux projets ANR PROTERRA et BIFASOL, ainsi qu’un financement de l’Ecole Centrale de Lille, présente l’optimisation des paramètres de dépôt de la couche de passivation d’Al2O3 ainsi qu’une étude approfondie du phénomène d’activation de la passivation, sur des échantillons avec et sans émetteur. L’analyse de la passivation a été réalisée grâce à des mesures couplées de durée de vie (PCD), électriques (C-V), de potentiel de surface (Sonde de Kelvin) et de spectrométrie (XPS, SIMS). Les sources de la passivation chimique et par effet de champ sont déterminées dans l'empilement Si/SiO2/Al2O3. Le rôle et la dynamique des hydrogènes contenus dans la couche d’alumine sont explicités. L’impact d’une encapsulation par du SiNx ainsi qu’un recuit de diffusion des contacts de 3s à 830°C est étudié
- Published
- 2015
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