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The high peak current withstand capability of thyristors makes them extremely suitable for pulsed power applications. Silicon carbide (SiC) thyristors provide significant efficiency advantages compared with their silicon counterparts due to their very fast switching transitions. This article presents the development and characteristics of 3 kV SiC thyristors. A novel current-source gate driver is proposed to enhance their switching speed and, hence, maximize their benefits in pulsed power applications. The proposed driver provides a very high gate current slew rate while limiting the peak of the current pulse. The higher gate current slew rate achieves faster and, thus, more efficient device switching transition. Gate driver circuit description, variant topologies, and experimental results for a 3 kV SiC thyristor for a pulsed power application are presented to verify the proposed concepts. [ABSTRACT FROM AUTHOR]

High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 \times 6\ \mm^2 SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors. [ABSTRACT FROM AUTHOR]

This paper presents a novel control strategy to significantly reduce the high-frequency transformer loss in a modular solid-state transformer (SST) based converter system. The modular SST design is based on an ac–dc power-electronic building block comprised of an H-bridge at the ac input and a bidirectional soft-switching isolated dc–dc converter with a medium-voltage insulated high-frequency transformer. The ac terminals of input H-bridges are connected in series and directly coupled to the medium-voltage ac line, while the output dc terminals are all connected in parallel at a low voltage. The key innovation described in this paper, without sacrificing the output performance, is the control scheme that reduces core and winding losses associated with the dc–dc resonant stage by turning off the selected dc–dc converters in synchronism with the line voltage. The prototype for the test described in this paper is based on a modular SST where each module is rated at 50 kVA, with a 200 kHz transformer using 1.7 kV silicon carbide discrete mosfets, but the described control concepts are more broadly applicable to similar topologies. [ABSTRACT FROM AUTHOR]