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Start Over Topic temperature measurement Publication Year Range Last 50 years
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1. Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

Author

Ali Soltani, Meriem Bouchilaoun, Samuel Graham, Georges Pavlidis, Hassan Maher, Christophe Rodriguez, Adrien Cutivet, Bilal Hassan, Francois Boone, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), OMMIC, Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Optoélectronique - IEMN (OPTO - IEMN), and This work was supported in part by the Fonds quèbècois de la recherche sur la nature et les technologies (FRQNT) and in part by the Natural Sciences and Engineering Research Council of Canada (NSERC). The review of this paper was arranged by Editor R. Venkatasubramanian

Subjects
Materials science, Thermal resistance, Gallium nitride, High-electron-mobility transistor, 01 natural sciences, Temperature measurement, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, gate resistance thermometry (GRT), law, 0103 physical sciences, Thermal, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, high-electron-mobilitytransistors (HEMTs), business.industry, Transistor, modeling, Electronic, Optical and Magnetic Materials, chemistry, Gallium nitride (GaN), Logic gate, Optoelectronics, thermoreflectance, Transient (oscillation), business, transient temperature measurement
Abstract

International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.

Published
2019

2. Maximizing pulp output and quality through measurement of plate gap temperature in high-consistency refining

Author

Fredrikson, Antti, Paltakari, Jonni, A Fredrikson Research & Consulting Ltd., Paper Converting and Packaging, Department of Bioproducts and Biosystems, Aalto-yliopisto, and Aalto University

Subjects
Plate gap, stomatognathic diseases, Energy efficiency, Temperature measurement, stomatognathic system, Thermomechanical pulping, High-consistency refining, Consistency
Abstract

The largest mechanical pulp production units are high-consistency refiners. In the high-consistency refiners, in-situ measurements of pulp quality are rare. Temperature profile is one of the measurements that is industrially applicable to estimate pulp quality. It measures the steam temperature in the refining area-but how it can detect deteriorated pulp quality will be shown. This paper analyzed the high-consistency refiner plate temperature and its correlation to pulp quality in a 1.34 MW pilot-scale Sunds RGP-44 variable speed refiner in a variety of operating conditions and particularly at production rates close to maximum refiner capacity. The study showed that there was a narrow band of optimal refining conditions at the maximum refiner production level just before pulp quality drastically decreased. When the refiner was pushed above this optimal point of operation, the plate temperature rapidly increased above normal refining temperature, causing reduction of fiber length and consequently lower pulp strength and quality. Thus, refiner plate temperature measurement was found to be a quick way and an effective tool for preventing low-quality pulp production through overloading the refiner.

Published
2020