101. High-performance p-type transparent conducting CuI–Cu2O thin films with enhanced hole mobility, surface, and stability.
- Author
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Xue, Ruibin, Gao, Gang, Yang, Lei, Xu, Liangge, Zhang, Yumin, and Zhu, Jiaqi
- Abstract
Low-temperature processable p-type transparent conductors are essential for flexible transparent electronics. Current research focuses primarily on wide-band gap copper-based oxides for p-type transparent conductors. However, these oxides generally exhibit inferior performance compared to their n-type counterparts, and their high preparation temperature is unfavorable for flexible electronic applications. CuI serves as a p-type transparent conductor with the ability to be prepared at low temperatures while possessing properties comparable to n-type transparent conductors. The conventional method for CuI film fabrication involves iodination of Cu films. Nevertheless, films produced through this approach exhibit a frosted-glass-like appearance and challenging-to-regulate electrical properties, rendering them unsuitable for electronic devices. In this study, we successfully developed composite films of CuI–Cu
2 O, demonstrating improved surface morphology and electronic properties at room temperature. The inclusion of Cu2 O suppresses the migration of CuI grain boundaries during the iodination process, leading to a reduction in CuI grain size and the formation of a polycrystalline structure with a smoother surface. The increased concentration of grain boundaries within the films, along with charge redistribution between Cu2 O and CuI, results in a decrease in hole concentration. As the Cu2 O content increases, the relative concentration of I vacancies in the films decreases, leading to an enhancement in hole mobility. The film conductivity initially rises and subsequently decreases with higher Cu2 O content. For CuI–Cu2 O films with optimized Cu2 O composition, visible region transparency ranges from 70% to 80%, hole concentration measures 6.16 × 1018 cm−3 , hole mobility reaches 25.40 cm2 V−1 s−1 , and conductivity amounts to 18.57 S cm−1 . Furthermore, after a period of six months, the electrical properties of CuI–Cu2 O films exhibit greater stability compared to pure CuI films. These findings are expected to expedite the widespread application of CuI films within transparent electronics. [ABSTRACT FROM AUTHOR]- Published
- 2023
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