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118 results on '"Chen, Jung-Hui"'

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1. High-Thermal Stable Epoxy Resin through Blending Nanoarchitectonics with Double-Decker-Shaped Polyhedral Silsesquioxane-Functionalized Benzoxazine Derivatives.

5. Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189]

10. Amide proton exchange in micelles

11. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory.

13. Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

14. RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

16. Manufacturing flexibility and manufacturing proactiveness: empirical evidence from the motherboard industry

17. Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid

18. Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

23. The experience of preventing needlestick injury by insulin pen

24. The effectiveness of reducing the amount of antibiotic resistant strains by promoting the antibiotic stewardship via antibiotic management team of a medical center

25. Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

26. Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation

27. Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

28. Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory.

29. Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

30. Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

31. Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

34. Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2structure resistance random access memory

35. Characteristics of hafnium oxide resistance random access memory with different setting compliance current

36. Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

37. Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

38. Performance and characteristics of double layer porous silicon oxide resistance random access memory

39. The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

40. Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

41. Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

42. Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

43. Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

44. Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

45. Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

49. Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment.

50. Microporous Carbon and Carbon/Metal Composite Materials Derived from Bio-Benzoxazine-Linked Precursor for CO 2 Capture and Energy Storage Applications.

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