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Your search keyword '"Jm M. Liu"' showing total 2 results
Start Over Author "Jm M. Liu" Publication Year Range Last 50 years
2 results on '"Jm M. Liu"'

1. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

Author

Q. S. Zhu, Zg G. Wang, Cm M. Li, X. L. Liu, Xq Q. Xu, Xw W. Zhang, S. Y. Yang, Jixue Wang, H.Y. Wei, Jm M. Liu, and Ym M. Fan

Subjects
X-ray photoelectron spectroscopy, Materials science, Indium nitride, Analytical chemistry, Nanochemistry, Band offset, chemistry.chemical_compound, Materials Science(all), lcsh:TA401-492, Nanotechnology, General Materials Science, Spectroscopy, Chemistry/Food Science, general, X ray photoemission, w-InN/h-BN heterojunction, Nano Express, Material Science, Engineering, General, Materials Science, general, Heterojunction, Valence band offset, Condensed Matter Physics, Physics, General, chemistry, Valence band, Conduction band offset, Molecular Medicine, lcsh:Materials of engineering and construction. Mechanics of materials
Abstract

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

Published
2010

2. Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3 junctions

Author

Min Zeng, Zb B. Yan, Jm-M. Liu, Xb B. Lu, Yb B. Lin, Jg G. Wan, Zx X. Lu, Jy Y. Dai, Y. Chen, and X. S. Gao

Subjects
Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, chemistry, Electrical resistivity and conductivity, Resistive switching, chemistry.chemical_element, Nanotechnology, Trapping, Polarization (waves), Oxygen
Abstract

The relationship between the bipolar resistive switching and the polarization reversal is investigated at various temperatures in the Au/BiFeO3/SrRuO3 structure. It is found that the polarization-induced barrier variation in the Au/BiFeO3 and BiFeO3/SrRuO3 junctions decreases with decreasing temperature. This explains why the resistance-switching ratio decreases with decreasing temperature below 323 K and gives evidence that the polarization modulates the resistance state of the Au/BiFeO3/SrRuO3 structure. Besides, the oxygen vacancies migration and/or the carrier trapping/detrapping mechanisms are also suggested to play a very important role in the resistive switching behavior in this structure as the temperature goes above 323 K.

Published
2014
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