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Anisotropic effect of the hole drift velocity in silicon and germanium has been investigated with the time of flight technique by applying the electric field parallel to the

Switching effects have been studied in high resistivity undoped β-rhombohedral boron in the temperature range 77 to 400°K using electrical and electro-optical measurements. The data collected must be interpreted with different models describing the origin of the switching action, i.e. double injection at low temperatures (about 77 to 250°K) and thermal instability at higher temperatures (250 to 400°K). A description of the main physical events giving rise to switching for double injection in the investigated sample is given. Emission of infrared radiation in the postswitching regime due to hole—electron recombination is also reported.