Search

The CHIPS Act, which promises $11 billion for chipmaking research and development, aims to revive America's chipmaking industry. Currently, the U.S. only produces 12 percent of chips worldwide. However, simply providing funding is not enough to ensure success in the complex and expensive chipmaking business. Lowering barriers to participation and financing, as well as fostering innovation and collaboration, are crucial. This can be achieved by creating shared experimental facilities, building computational models, and promoting data sharing. Additionally, nurturing talent and creating a supportive industry environment are essential for long-term success. [Extracted from the article]

We demonstrate a back-end-of-line (BEOL) compatible 2T gain cell consisting of n-type indium-tin-oxide (ITO) MOSFET as a write transistor and p-type carbon nanotube (CNT) MOSFET as a read transistor. The opposite polarities help counteract the capacitive coupling in gain cells operating with voltage sensing: the drop of the storage node voltage due to the capacitive coupling with the write wordline (gate of a write nMOSFET) is fully recovered at the time of enabling the read wordline (source of a read pMOSFET) for readout. With the low leakage of an ITO nMOSFET and the opposite polarity of the read transistor, retention time of more than 500 s is achieved at zero-volt standby voltage. The results suggest that the hybrid combination of n-ITO and p-CNT is a promising approach to improve gain cell operation in terms of read margin, retention, and read speed for 3D integrated all-BEOL gain cell memory above the silicon FET logic layer.

In 1997 the IBM Deep Blue supercomputer defeated world chess champion Garry Kasparov. It was a ground-breaking demonstration of supercomputer technology and a first glimpse into how high-performance computing might one day overtake human-level intelligence. In the 10 years that followed, we began to use artificial intelligence for many practical tasks, such as facial recognition, language translation, and recommending movies and merchandise.

Low voltage and low OFF-current selectors are needed to meet the requirements for cross-point array architectures in embedded memories. Chalcogenide-based selectors have been widely studied for such applications, but no single material system has yet demonstrated all the specifications required for integration with nonvolatile memory. This article presents arsenic-free selectors based on a simple and stable material system consisting of Te in an insulating SiOx matrix. By modifying the thickness and atomic composition of films, tunable switching voltage and OFF-current are achieved. Optimized forming-free SiOxTey selectors are demonstrated with a threshold voltage of ~1.2 V and an OFF-current of ~3 nA at 0.5 V. Size- and temperature-dependent measurements provide insight into the different conduction mechanisms of devices with different forming behaviors. Threshold voltage drift of ~30 mV/decade is measured for both forming-required and forming-free devices. These selectors maintain their functionality after a 300°C anneal and a recovery pulse, and they are stable after one year stored in air. Excellent endurance of 1011 cycles is reported, making these devices promising for integration with nonvolatile memory.