Search

Highlights: [•] Sputtered AlO x film as the gate insulator. [•] Effect of rf power on the electrical properties of AlO x insulator. [•] Electrical performance and bias stability of InGaZnO-TFTs. [•] Interfacial properties using C–V method. [ABSTRACT FROM AUTHOR]

Abstract: A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium–gallium–zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p–n junction with the InGaZnO film. After 60s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5A/W at a gate-source voltage (V GS) of 20V, which is much larger than that (31.2A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p–n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT. [Copyright &y& Elsevier]