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In this work, two different structure of Cu/Sr-WO 3 /p-Si metal-insulator-semiconductor (MIS) and Cu/Sr-WO 3 /FTO metal-insulator-metal (MIM) Schottky barrier diodes (SBDs) fabricated with an insulating layer of pure tungsten trioxide (WO 3 ) and Sr-WO 3 thin films have been reported. The Sr-WO 3 layer was coated separately, with different concentrations (0, 4, 8 and 12 wt %) of strontium (Sr) via jet nebulizer spray pyrolysis technique (JNSP) on the p-type silica wafer (p-Si) and fluorine doped tin oxide (FTO) substrates which are been optimized at 400 °C. The XRD analysis reveals the multiphase crystalline structures for 12 wt % of Sr-WO 3 film with higher average crystallite size. FE-SEM images show the randomly oriented sub-microsized slab and seashell like structures. Higher surface roughness with improved grain size for 12 wt % of Sr-WO 3 film. The presence of W, O and Sr atoms was confirmed by EDX spectra. In optical studies, Maximum absorption with minimum optical band gap was observed for 12 wt % of Sr-WO 3 composite film. There was a linear increase in the electrical conductivity of the films with higher wt. % of Sr. Evidently the activation energy decreased with Sr concentration which is in accordance with the bandgap values. The fitting results of the measured I-V, reveal that MIS (SBDs) under illumination condition have minimum ideality factor (n = 2.39) and maximum barrier height (Φ b  = 0.57) values for higher concentration (12 wt %) of Sr film compared to MIM SBDs. [ABSTRACT FROM AUTHOR]

Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are the most significant device in optoelectronic device application. Here, we demonstrated a highly rectifying SBDs using a thin interfacial layer among p-type silicon (p-Si) and metal (Cu) junction. These composite films are coated with different concentrations of Ba (0, 5, 10 and 15 wt%) using jet nebulizer spray pyrolysis (JNSP) technique with an optimized substrate temperature of 500 °C. A significant reduction of reverse saturation (Io) current was obtained on introducing the Ba–MoO 3 composite films in between Cu/p-Si interface. X-ray diffraction (XRD) pattern revealed the monoclinic crystalline phases of Ba–MoO 3 thin films along with improved grain size. Field emission scanning electron microscope (FE-SEM) images of the prepared thin films displayed a plate-like structure, which on increasing the Ba concentration transforms into a flag-like structure. The presence of constituent elements like O, Mo, Ba were confirmed by energy dispersive analysis X-Ray (EDAX) spectrum. The atomic force microscopy (AFM), exposed a smoother surface and an improved surface roughness of the film while varying the Ba concentration. Band gap energy of the Ba–MoO 3 films are found to increase after adding the Ba content. The electrical conductivity decreased with increasing Ba concentration of Ba–MoO 3 films corresponding activation energy is increased. All the fabricated Cu/Ba–MoO 3 /p-Si diodes show positive photoconducting nature, in which the ideality factor of the diode decreases gradually with Ba concentration. Hence 15 wt% of Ba shows better device performance relatively with other diodes. Image 1 • Highly rectifying Cu/Ba–MoO 3 /p-Si structured Schottky barrier diodes has been fabricated through low cost jet nebulizer spray pyrolysis technique. • The phase changes was observed (orthorombic to monoclinic) while increasing Ba concentration. • Remarkably, the plate-like and flower-like sufface morphology was revealed by FE-SEM. • Cu/Ba–MoO 3 /p-Si diode fabricated with 15 exposes a lower n = 1.92 values under light condition. • The Cu/Ba–MoO 3 /p-Si diodes highly appropriate for UV photodetector application. [ABSTRACT FROM AUTHOR]

In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on glass and Si substrates by the sol-gel method combined with the spin coating method. The films' structural, morphological, optical, and electrical properties were investigated through XRD, FESEM, UV-Vis, and I-V electrical conductivity. Doping on V 2 O 5 with low Yb content of 2, 4, and 6 ​wt % have highly affected the lattice, which is shown in tetragonal and orthorhombic structures. Morphological studies show nanorods like structured. The coated thin films yield bandgap of 3.23–3.31 ​eV. The electrical properties of Cu/Yb@V 2 O 5 /n-Si type Schottky barrier diode were studied, and calculated photodiode parameters like photosensitivity, photo-responsivity, external quantum efficiency, and detectivity. Predominantly, high photosensitivity of 5545.70% is obtained for the diode with 2 ​wt % Yb@V 2 O 5. [Display omitted] • Cu/Yb@V 2 O 5 /n-Si structured diodes are successfully fabricated. • Development of Yb@V 2 O 5 led to an increase of barrier height. • Optimum barrier height of 0.93 ​eV is obtained owing to Yb. • Yb@V 2 O 5 interface layer drawn high quantum efficiency of 37.90%. • Remarkably, 2 ​wt% Yb@V 2 O 5 is obtained high photosensitivity of 5545.70 %. [ABSTRACT FROM AUTHOR]