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Highlights: [•] Sputtered AlO x film as the gate insulator. [•] Effect of rf power on the electrical properties of AlO x insulator. [•] Electrical performance and bias stability of InGaZnO-TFTs. [•] Interfacial properties using C–V method. [ABSTRACT FROM AUTHOR]

Abstract: Obstructive sleep apnea and other sleep-related breathing disorders result in recurrent periods of oxygen deprivation (hypoxia), hypercapnia and an increase in the cellular production of reactive oxygen species (oxidative stress-related injury). Individuals with these disorders suffer from a variety of cellular abnormalities that result in cardiopulmonary dysfunctions, disturbances in sleep and other pathologies. In the present experiment, using an animal model of sleep apnea, we determined that the degeneration of neurons and glia, due to apoptosis, occurs in specific regions of the pons and medulla. Adult guinea pigs, which were divided into control (normoxic) and experimental (hypoxic) groups, were anesthetized with α-chloralose and immobilized with Flaxedil. Apnea (hypoxia) was induced by ventilatory arrest in order to desaturate the oxyhemoglobin to 75% SpO2. A sequence of apnea, followed by ventilation with recovery to >95% SpO2, was repeated for a period of 3h. At the end of the period of recurrent apnea, the animals were perfused and brain sections were immunostained with a mouse monoclonal antibody raised against single-stranded DNA (ssDNA). Apoptotic neurons and glia, which were not found in the control group of animals, were present in brainstem regions in hypoxic group of animals; these regions involved in the control of respiration (e.g., the parafacial respiratory group and the ventral respiratory group), cardiovascular functions (e.g., the nucleus ambiguus, the nucleus tractus solitarius and the dorsal motor nucleus of the vagus) as well as REM sleep (the nucleus pontis oralis) and wakefulness (e.g., the dorsal raphe and locus ceruleus). We suggest apoptotic neurons and glia in critical areas of the pons and medulla results in many of the comorbidities experienced by patients with sleep-disordered breathing pathologies. [ABSTRACT FROM AUTHOR]

Abstract: Obstructive sleep apnea (OSA) and sleep-disordered breathing (SDB) can result in impaired cognition and mental acuity, and the generation of mood disorders, including depression. However, the mechanisms of neuronal damage for these complications have not been elucidated. Accordingly, using immunohistochemical technique with monoclonal antibody against single-stranded DNA, we examined the morphological effects of chronic recurrent apnea on neurons in the hippocampus and related forebrain sites in guinea pigs. Our results show that a large number of neurons labeled by anti-ssDNA antibody were present in the cingulate, insular and frontal cortices, the hippocampus and the amygdala in conjunction with periods of recurrent apnea. However, no labeling was observed in comparable regions of the brain in control guinea pigs. In the cortices of experimental animals, labeled neurons were detected mainly in the superficial layers (II–III) in the frontal, insular and cingulate cortex. In the hippocampus, most labeled neurons were located in the CA1 region, in which most of stained neurons were observed in strata pyramidal, while only a few positive neurons were located in the strata radiatum and the strata oriens. In addition, a large number of labeled neurons were also detected in the central nucleus of amygdala in the guinea pigs underwent recurrent periods of apnea. The present data indicate that recurrent apnea results in cell death in the hippocampus and related forebrain regions via mechanisms of apoptosis, which may represent the basis for the clinical complications of obstructive sleep apnea and sleep-disordered breathing. [Copyright &y& Elsevier]

NK-lysin (NKL) is a positively charged antimicrobial peptide with broad-spectrum bactericidal activities. In this study, the cDNA sequence of NKL (TmNKL) from black scraper (Thamnaconus modestus) was cloned, which encodes a predicted polypeptide of 150 amino acids that contains a surfactant protein B domain with three disulfide bonds. Phylogenetically, TmNKL was most closely related to its teleost counterpart from tiger puffer (Takifugu rubripes). Expression analysis demonstrated that TmNKL transcripts were constitutively expressed in all tested tissues, with the highest expression levels in the gills. Its expression was significantly upregulated in the gills, head kidney, and spleen after infection with Vibrio parahaemolyticus. A linear peptide (TmNKLP40L) and a disulfide-type peptide (TmNKLP40O) were further synthesized and results showed that disulfide bonds are not essential for bactericidal activities of TmNKL, and that both forms of TmNKL exhibited potent bactericidal activities against 4 gram- negative bacteria, including V. parahaemolyticus , V. alginolyticus , Edwardsiella tarda , and V. harveyi. Observed antimicrobial activities are likely due to the effects of TmNKLP40L and TmNKLP40O treatment on disrupting the integrity of both inner and outer membrane of V. parahaemolyticus , resulting in hydrolysis of bacterial genomic DNA. Damaged cell membranes and leakage of intracellular contents were further confirmed using scanning and transmission microscopy. Moreover, administration of 1.0 μg/g TmNKLP40L or TmNKLP40O significantly decreased bacterial load in tissues and thus, pronouncedly enhanced the survival of V. parahaemolyticus -infected fish. Overall, our results demonstrated that TmNKL is a potent innate effector and provides protective effects against bacterial infection. • We identified a NK-lysin (TmNKL) from black scraper. • TmNKL transcripts showed upregulation in multiple tissues against Vibrio parahaemolyticus. • TmNKL exhibited potent bactericidal activities irrespective of the presence of disulfide bonds. • TmNKL had a protective effect on black scraper against V. parahaemolyticus. [ABSTRACT FROM AUTHOR]

Abstract Rubiadin-1-methyl ether (RBM) is a natural anthraquinone compound isolated from the root of Morinda officinalis How. In our previous study, RBM was found to have inhibitory effects on the TRAP activity of osteoclasts, which means that RBM may be a candidate for therapy of bone diseases characterized by enhanced bone resorption. However, the further effect of RBM on osteoclasts and the underlying mechanism remain unclear. In the present study, we investigated the effects of RBM isolated from Morinda officinalis How. on osteoclasts derived from bone marrow macrophages (BMMs) and the underlying mechanism in vitro. RBM at the dose that did not affect the viability of cells significantly inhibited RANKL-induced osteoclastogenesis and actin ring formation of osteoclast, while RBM performed a stronger effect at the early stage. In addition, RBM downregulated the expression of osteoclast-related proteins, including nuclear factor of activated T cells cytoplasmic 1 (NFATc1), cellular oncogene Fos (c-Fos), matrix metallopeptidase 9 (MMP-9) and cathepsin K (CtsK) as shown by Western blot. Furthermore, RBM inhibited the phosphorylation of NF-κB p65 and the degradation of IκBα as well as decreased the nuclear translocation of p65. Collectively, the results suggest that RBM inhibit osteoclastic bone resorption through blocking NF-κB pathway and may be a promising agent for the prevention and treatment of bone diseases characterized by excessive bone resorption. Highlights • Rubiadin-1-methyl ether (RBM) inhibits osteoclastogenesis at early stage. • RBM inhibits bone resorption by reducing expression of osteoclastic c-Fos and NFATc1. • RBM is involved in RANKL-induced NF-κB signaling pathway in osteoclasts. [ABSTRACT FROM AUTHOR]

Abstract Boron doped InZnO (BIZO) thin film has been fabricated via solution process and the effect of boron addition on the properties of BIZO thin film is investigated with the glancing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), the atomic force microscopy (AFM) and UV–vis spectrophotometer. The XPS spectra show that the oxygen vacancies in IZO semiconductor materials are effectively suppressed by boron contents due to high Lewis acid strength and strong bonding dissociation energy of B O. Moreover, the associated application in TFTs has also been fabricated by solution process and the thermal stability and electrical properties of solution processed BIZO-TFTs are investigated to confirm the decrease of oxygen vacancies in IZO materials. Meanwhile, the capacitance voltage measurement and the density of states are carried out to further investigate the enhanced electrical performance and thermal stability of TFTs due to the suppression of oxygen vacancies. Thus, the B doping is an effective method to suppress the generation of oxygen vacancies in IZO materials and to improve the thermal stability of solution processed BIZO-TFTs. Highlights • Influence of boron composition on oxygen vacancy of BInZnO thin films. • Thermal stability of BInZnO TFTs. • Solution processed BIZO thin films and BIZO-TFTs. • CV measurement and the DOS. [ABSTRACT FROM AUTHOR]

The high κ ZrAlO x gate insulators were deposited by atomic layer deposition on silicon and characterized by the different analytical techniques. The grazing incidence X-ray diffraction (GIXRD) verifies that ZrAlO x thin films show an amorphous structure. The X-ray photoelectron spectroscopy (XPS) confirms that the form of ZrAlO x phase improves the electrical properties and stability of the associated devices. Then, all ZrAlO x thin films were integrated in metal-insulator-semiconductor structures to check the electrical capabilities. They all show a low leakage current density (about 1 × 10 −8 A/cm 2 ) under a high electric field of about 2.0 MV/cm, and exhibit a stable capacitance as a function of frequency. Their associated ZTO TFTs were deposited by a radio frequency sputtering, and the influence of the ZrAlO x thickness on the stabilities under positive bias stress and electrical properties is investigated. The 130 nm ZrAlO x based TFT shows the optimized electrical properties (its mobility, threshold voltage, sub-threshold voltage swing and on-off ratio are 12.5 cm 2 /V, 0.3 V, 0.15 V/dec. and 8 × 10 7 and the good stability with 2.5 V threshold voltage shift under the positive bias voltage stress. The better properties of 130 nm ZrAlO x based TFTs are attributed to a less interface trap states and surface scattering center. [ABSTRACT FROM AUTHOR]

In this work, we report the influence of ZnSnO channel layer sputtering power in the stability of ZnSnO TFTs under negative gate-bias illumination stress (NBIS). The origin of threshold voltage shift results from combined effect of two factors between the little defect-induced trap densities originated from oxygen vacancies and better channel–insulator interface. The kinetic energy of the ions at a proper rf sputtering power is responsible for less defect-induced trap density and better channel–insulator interface. Therefore, the ZnSnO TFT fabricated at 75 W sputtering power shows a better NBIS stability. In addition, the trap density is extracted by temperature-dependent field-effect measurements and it is consistent with the change of stability under NBIS and thermal stress. [ABSTRACT FROM AUTHOR]

We investigate the stability of thin film transistors incorporating sputtered InZnO as the channel layer under negative bias illumination stress. The transfer characteristic for various active layer thicknesses is shifted toward the negative direction under negative bias illumination stress and the device with thicker channel layer shows a slighter V TH negative shift than another device under negative bias illumination stress. In order to investigate channel layer thickness can have a great effect on the trap density and thus affect the V TH shift caused by charge trapping; we use temperature-dependent field-effect measurements method to accurately calculate their trap density. The results show that thicker InZnO channel layer has fewer DOSs, resulting in the decrease of charge trapping and the decrease of photoexcitation generated electron carrier. So the device with thicker channel layer shows a slighter V TH negative shift than another device under negative bias illumination stress. [ABSTRACT FROM AUTHOR]

Abstract: A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium–gallium–zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p–n junction with the InGaZnO film. After 60s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5A/W at a gate-source voltage (V GS) of 20V, which is much larger than that (31.2A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p–n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT. [Copyright &y& Elsevier]