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1. Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

2. Inelastic electron tunneling spectrometer to characterize metal–oxide–semiconductor devices with ultrathin oxides

3. Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices

4. Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination

5. Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

6. Bidirectional stress on a p-metal–oxide–silicon capacitor

7. On the decay of the trapped holes and the slow states in metal–oxide–semiconductor capacitors

8. Si–SiO2 barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide

9. Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

10. Generation of Si–SiO2interface states by high electric field stress from low (100 K) to high (450 K) temperatures

11. Charging effects of MgO under electron bombardment and nonohmic behavior of the induced specimen current

12. Relaxation of interface states and positive charge in thin gate oxide after Fowler–Nordheim stress

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