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30 results on '"Kevin P. Homewood"'

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1. Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon

2. Photoreflectance study of ion beam synthesized β-FeSi2

3. Raman investigation of ion beam synthesized β-FeSi2

4. Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

5. Interdiffusion in InGaAs/GaAs: The effect of growth conditions

6. The activation energy for GaAs/AlGaAs interdiffusion

7. Deep level transient spectroscopy of CdS/CdTe thin film solar cells

8. Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2

9. Evaluation of silicon‐on‐insulator substrates using photoconductive frequency resolved spectroscopy

10. The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures

11. Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth

12. The analysis of the temperature dependence of photoconductive frequency‐resolved spectroscopy in the presence of carrier trapping: Application to polycrystalline silicon

13. The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures

14. Raman scattering and photoluminescence analysis of silicon on insulator structures obtained by single and multiple oxygen implants

15. Optical characterization of thermal mixing in quantum wells and heterostructures using a Green’s function model

16. A deep semiconductor defect with continuously variable activation energy and capture cross section

17. Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

18. Intermixing in GaAsSb/GaAs single quantum wells

19. An optical study of interdiffusion in ZnSe/ZnCdSe

20. Order domain boundaries in ion beam synthesized semiconducting FeSi2 layers

21. Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs‐InxGa1−xAsyP1−y heterostructures

22. Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells

23. Photoluminescence of deep levels in ion‐implanted AlxGa1−xAs

24. Optical characterization of silicon‐on‐insulator material obtained by sequential implantation and annealing

25. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells

26. Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures

27. An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

28. Extraordinary optical gain from silicon implanted with erbium

29. On the origin of the 1.5 μm luminescence in ion beam synthesized β‐FeSi2

30. Superstrained superlattices: A processing approach

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