1. W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer
- Author
-
Tetsuo Endoh, Yoshiaki Saito, Nobuki Tezuka, and Shoji Ikeda
- Subjects
010302 applied physics ,Materials science ,Condensed matter physics ,Computer Science::Neural and Evolutionary Computation ,General Physics and Astronomy ,02 engineering and technology ,Conductivity ,021001 nanoscience & nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,01 natural sciences ,lcsh:QC1-999 ,Tunnel magnetoresistance ,Condensed Matter::Materials Science ,0103 physical sciences ,Electrode ,Spin Hall effect ,Spin diffusion ,Condensed Matter::Strongly Correlated Electrons ,Texture (crystalline) ,0210 nano-technology ,Layer (electronics) ,lcsh:Physics ,Spin-½ - Abstract
We investigated spin-Hall effect (SHE) and degree of MgO (100) orientation in artificially synthesized (W/Hf)-multilayer/CoFeB/MgO systems with various W thicknesses. We found that the artificially synthesized multilayer systems can enhance the spin-Hall effect and control the value of spin diffusion length. We observed a maximum magnitude in both spin-Hall angle and spin-Hall conductivity as a function of W thickness in W/Hf-multilayer systems, and found that the values of spin-Hall conductivity are larger than that for β-phase W. In addition, a more highly oriented MgO (100) texture on CoFeB is obtained for (W/Hf)-multilayer systems prepared under low-Ar-pressure condition, which would be suitable for preparation of magnetic tunnel junctions with high tunnel magnetoresistance properties on (W/Hf)-multilayer heavy metal electrode. These results suggest that the artificially synthesized multilayer system is one of the avenues for realizing spin devices using spin-orbit torque.
- Published
- 2021