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A comprehensiveinvestigation was carried out on n-type ZnO nanowiresfor studying the temperature dependence of the piezotronic effectfrom 77 to 300 K. In general, lowering the temperature results ina largely enhanced piezotronic effect. The experimental results showthat the behaviors can be divided into three groups depending on thecarrier doping level or conductivity of the ZnO nanowires. For nanowireswith a low carrier density (<1017/cm3at77 K), the pieozotronic effect is dominant at low temperature fordictating the transport properties of the nanowires; an opposite changeof Schottky barrier heights at the two contacts as a function of temperatureat a fixed strain was observed for the first time. At a moderate doping(between 1017/cm3and 1018/cm3at 77 K), the piezotronic effect is only dominant at onecontact, because the screening effect of the carriers to the positivepiezoelectric polarization charges at the other end (for n-type semiconductors).For nanowires with a high density of carriers (>1018/cm3at 77 K), the piezotronic effect almost vanishes.This studynot only proves the proposed fundamental mechanism of piezotroniceffect, but also provides guidance for fabricating piezotronic devices. [ABSTRACT FROM AUTHOR]

We present that the electroluminescence (EL) propertiesof Mg-doped p-type GaN thin films can be tuned bythe piezo-phototroniceffect via adjusting the minority carrier injection efficiency atthe metal–semiconductor (M–S) interface by strain inducedpolarization charges. The device is a metal–semiconductor–metalstructure of indium tin oxide (ITO)–GaN–ITO. Under differentstraining conditions, the changing trend of the transport propertiesof GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observedfor the integral EL intensity under certain applied strain due tothe adjusted minority carrier injection efficiency by piezoelectriccharges introduced at the M–S interface. The external quantumefficiency of the blue EL at 430 nm was changed by 5.84% under differentstraining conditions, which is 1 order of magnitude larger than thechange of the green peak at 540 nm. The results indicate that thepiezo-phototronic effect has a larger impact on the shallow acceptorstates related EL process than on the one related to the deep acceptorstates in p-type GaN films. This study has greatsignificance on the practical applications of GaN in optoelectronicdevices under a working environment where mechanical deformation isunavoidable such as for flexible/printable light emitting diodes. [ABSTRACT FROM AUTHOR]

We demonstrate the first electric field induced transverse deflection of a single-crystal, free-standing ZnO microbelt as a result of converse piezoelectric effect. For a microbelt growing along the c-axis, a shear stress in the a-cplane can be induced when an electric field Eis applied along the a-axis of the wurtzite structure. As amplified by the large aspect ratio of the microbelt that grows along the c-axis, the strain localized near the root can be detected via the transverse deflection perpendicular to the ZnO microbelt. After an experimental approach was carefully designed and possible artifacts were ruled out, the experimentally observed degree of deflection of the microbelt agrees well with the theoretically expected result. The device demonstrated has potential applications as transverse actuators/sensors/switches and electric field induced mechanical deflectors. [ABSTRACT FROM AUTHOR]

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

The somatosensory system helps the human body to become aware of various stimuli and to interact with its surroundings. Humans are able to identify and to process abundant sensory information quickly due to their unique perception characteristics. As the largest sensory organ, skin has a large number of discrete receptors to sense and to transform stimuli of touch, pressure, pain, temperature, etc . into electrical signals, which are preprocessed at various levels before reaching the brain, greatly reducing the computational burden on the central nervous system. In addition, the conduction speed varies for different stimulus information, which simplifies the parallel processing of a variety of information. In this Perspective, we discuss a bioinspired design for a flexible smart sensor system by simulating the human somatosensory system. In this design, sensors with selective responses, signals separated in time sequences, and hierarchical information processing are adopted to optimize the sensing and perceiving processes, to reduce power consumption, and to improve the speed of a flexible smart sensor system.

Biological signals generated during various biological processes are critically important for providing insight into the human physiological status. Recently, there have been many great efforts in developing flexible and stretchable sensing systems to provide biological signal monitoring platforms with intimate integration with biological surfaces. Here, this review summarizes the recent advances in flexible and stretchable sensing systems from the perspective of electronic system integration. A comprehensive general sensing system architecture is described, which consists of sensors, sensor interface circuits, memories, and digital processing units. The subsequent content focuses on the integration requirements and highlights some advanced progress for each component. Next, representative examples of flexible and stretchable sensing systems for electrophysiological, physical, and chemical information monitoring are introduced. This review concludes with an outlook on the remaining challenges and opportunities for future fully flexible or stretchable sensing systems.

The longtime vacancy of high-performance complementary metal-oxide-semiconductor (CMOS) technology on plastics is a non-negligible obstacle to the applications of flexible electronics with advanced functions, such as continuous health monitoring with in situ signal processing and wireless communication capabilities, in which high speed, low power consumption, and complex functionality are desired for integrated circuits (ICs). Here, we report the implementation of carbon nanotube (CNT)-based high-performance CMOS technology and its application for signal processing in an integrated sensor system for human body monitoring on ultrathin plastic foil with a thickness of 2.5 μm. The performances of both the p- and n-type CNT field-effect transistors (FETs) are excellent and symmetric on plastic foil with a low operation voltage of 2 V: width-normalized transconductances ( g m / W) as high as 4.69 μS/μm and 5.45 μS/μm, width-normalized on-state currents reaching 5.85 μA/μm and 6.05 μA/μm, and mobilities up to 80.26 cm 2 ·V -1 ·s -1 and 97.09 cm 2 ·V -1 ·s -1 , respectively, together with a current on/off ratio of approximately 10 5 . The devices were mechanically robust, withstanding a curvature radius down to 124 μm. Utilizing these transistors, various high-performance CMOS digital ICs with rail-to-rail output and a ring oscillator on plastics with an oscillation frequency of 5 MHz were demonstrated. Furthermore, an ultrathin skin-mounted humidity sensor system with in situ frequency modulation signal processing capability was realized to monitor human body sweating.

Flexible ZnO thin film UV sensors with 3 orders of magnitude improvement in sensitivity and 2 orders of magnitude acceleration in speed are realized via light absorption efficiency enhancement and surface encapsulation. Devices are constructed on polyethylene substrate incorporating morphology controlled ZnO nanorod arrays (NRAs) as absorbing antireflection layers. By adjusting the morphology of ZnO NRAs, the light absorptance exceeds 99% through effectively trapping incident photons. As a result, the sensitivity of the UV sensor reaches 109 000. Moreover, a mechanism of competitive chemisorption between O2 and H2O at oxygen vacancy sites is proposed to explain the phenomenon of the speed acceleration in moist environment. A new approach of humectant encapsulation is used to make H2O participant rapid processes dominant for speed acceleration. Two orders of magnitude speed enhancement in reset time is achieved by polyethylene glycol encapsulation. After a total 3000 cycles bending test, the decay in the responsivity of UV sensor is within 20%, indicating good mechanical stability. All these results not only demonstrate a simple, effective and scalable approach to fabricate high sensitive and fast response flexible ZnO UV sensors, but also provide meaningful references for performance boosting of photoelectronic devices based on other oxide semiconductors.

The recently introduced triboelectric nanogenerator (TENG) and the traditional electromagnetic induction generator (EMIG) are coherently integrated in one structure for energy harvesting and vibration sensing/isolation. The suspended structure is based on two oppositely oriented magnets that are enclosed by hollow cubes surrounded with coils, which oscillates in response to external disturbance and harvests mechanical energy simultaneously from triboelectrification and electromagnetic induction. It extends the previous definition of hybrid cell to harvest the same type of energy with multiple approaches. Both the sliding-mode TENG and contact-mode TENG can be achieved in the same structure. In order to make the TENG and EMIG work together, transformers are used to match the output impedance between these two power sources with very different characteristics. The maximum output power of 7.7 and 1.9 mW on the same load of 5 kΩ was obtained for the TENG and EMIG, respectively, after impedance matching. Benefiting from the rational design, the output signal from the TENG and the EMIG are in phase. They can be added up directly to get an output voltage of 4.6 V and an output current of 2.2 mA in parallel connection. A power management circuit was connected to the hybrid cell, and a regulated voltage of 3.3 V with constant current was achieved. For the first time, a logic operation was carried out on a half-adder circuit by using the hybrid cell working as both the power source and the input digit signals. We also demonstrated that the hybrid cell can serve as a vibration isolator. Further applications as vibration dampers, triggers, and sensors are all promising.

An unstable mechanical structure that can self-balance when perturbed is a superior choice for vibration energy harvesting and vibration detection. In this work, a suspended 3D spiral structure is integrated with a triboelectric nanogenerator (TENG) for energy harvesting and sensor applications. The newly designed vertical contact-separation mode TENG has a wide working bandwidth of 30 Hz in low-frequency range with a maximum output power density of 2.76 W/m(2) on a load of 6 MΩ. The position of an in-plane vibration source was identified by placing TENGs at multiple positions as multichannel, self-powered active sensors, and the location of the vibration source was determined with an error less than 6%. The magnitude of the vibration is also measured by the output voltage and current signal of the TENG. By integrating the TENG inside a buoy ball, wave energy harvesting at water surface has been demonstrated and used for lighting illumination light, which shows great potential applications in marine science and environmental/infrastructure monitoring.

We introduce an innovative design of a disk triboelectric nanogenerator (TENG) with segmental structures for harvesting rotational mechanical energy. Based on a cyclic in-plane charge separation between the segments that have distinct triboelectric polarities, the disk TENG generates electricity with unique characteristics, which have been studied by conjunction of experimental results with finite element calculations. The role played by the segmentation number is studied for maximizing output. A distinct relationship between the rotation speed and the electrical output has been thoroughly investigated, which not only shows power enhancement at high speed but also illuminates its potential application as a self-powered angular speed sensor. Owing to the nonintermittent and ultrafast rotation-induced charge transfer, the disk TENG has been demonstrated as an efficient power source for instantaneously or even continuously driving electronic devices and/or charging an energy storage unit. This work presents a novel working mode of TENGs and opens up many potential applications of nanogenerators for harvesting even large-scale energy.

Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.

Harvesting thermoelectric energy mainly relies on the Seebeck effect that utilizes a temperature difference between two ends of the device for driving the diffusion of charge carriers. However, in an environment that the temperature is spatially uniform without a gradient, the pyroelectric effect has to be the choice, which is based on the spontaneous polarization in certain anisotropic solids due to a time-dependent temperature variation. Using this effect, we experimentally demonstrate the first application of pyroelectric ZnO nanowire arrays for converting heat energy into electricity. The coupling of the pyroelectric and semiconducting properties in ZnO creates a polarization electric field and charge separation along the ZnO nanowire as a result of the time-dependent change in temperature. The fabricated nanogenerator has a good stability, and the characteristic coefficient of heat flow conversion into electricity is estimated to be ∼0.05-0.08 Vm(2)/W. Our study has the potential of using pyroelectric nanowires to convert wasted energy into electricity for powering nanodevices.

We demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.

We demonstrate the first self-powered system driven by a nanogenerator (NG) that works wirelessly and independently for long-distance data transmission. The NG was made of a free cantilever beam that consisted of a five-layer structure: a flexible polymer substrate, ZnO nanowire textured films on its top and bottom surfaces, and electrodes on the surfaces. When it was strained to 0.12% at a strain rate of 3.56% S(-1), the measured output voltage reached 10 V, and the output current exceeded 0.6 μA (corresponding power density 10 mW/cm(3)). A system was built up by integrating a NG, rectification circuit, capacitor for energy storage, sensor, and RF data transmitter. Wireless signals sent out by the system were detected by a commercial radio at a distance of 5-10 m. This study proves the feasibility of using ZnO nanowire NGs for building self-powered systems, and its potential application in wireless biosensing, environmental/infrastructure monitoring, sensor networks, personal electronics, and even national security.

We present a simple, cost-effective, robust, and scalable approach for fabricating a nanogenerator that gives an output power strong enough to continuously drive a commercial liquid crystal display. Utilizing the conical shape of the as-grown ZnO nanowires, a nanogenerator is fabricated by simply dispersing them onto a flat polymer film to form a rational "composite" structure. It is suggested that the geometry induced unipolar assembly of the conical nanowires in such a composite structure results in a macroscopic piezoelectric potential across its thickness by introducing a mechanical deformation, which may be responsible for driving the flow of the inductive charges between the top and bottom electrodes. A compressive strain of 0.11% at a straining rate of 3.67% s(-1) produces an output voltage up to 2 V (equivalent open circuit voltage of 3.3 V). This is a practical and versatile technology with the potential for powering small size personal electronics.

Using a metal-semiconductor-metal back-to-back Schottky contacted ZnO microwire device, we have demonstrated the piezoelectric effect on the output of a photocell. An externally applied strain produces a piezopotential in the microwire, which tunes the effective height of the Schottky barrier (SB) at the local contact, consequently changing the transport characteristics of the device. An equivalent circuit model together with the thermionic emission theory has explained the four kinds of relationships observed between the photocurrent and the applied strain. Our study shows the possibility of maximizing the output of a photocell by controlling strain in the device.

The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/nanowire device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal-ZnO contact, while photoexcitation using a light that has energy higher than the band gap of ZnO lowers the SB height. By tuning the relative contributions of the effects from piezoelectricity via strain and photoexcitation via light intensity, the local contact can be tuned step-by-step and/or transformed from Schottky to Ohmic or from Ohmic to Schottky. This study describes a new principle for controlling the coupling among mechanical, photonic, and electrical properties of ZnO nanowires, which could be potentially useful for fabricating piezo-phototronic devices.