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The growth of crystalline Li-based oxide thin films on silicon substrates is essential for the integration of next-generation solid-state lithionic and electronic devices including on-chip microbatteries, memristors, and sensors. However, growing crystalline oxides directly on silicon typically requires high temperatures and oxygen partial pressures, which leads to the formation of undesired chemical species at the interface compromising the crystal quality of the films. In this work, we employ a 2 nm gamma-alumina (γ-Al 2 O 3 ) buffer layer on Si substrates in order to grow crystalline thin films of Li 4 Ti 5 O 12 (LTO), a well-known active material for lithium-ion batteries. The ultrathin γ-Al 2 O 3 layer enables the formation of a stable heterostructure with sharp interfaces and drastically improves the LTO crystallographic and electrochemical properties. Long-term galvanostatic cycling of 50 nm LTO films in liquid-based half-cells demonstrates a high capacity retention of 91% after 5000 cycles at 100 C. Rate capability tests showcase a specific charge of 56 mA h g -1 at an exceptional C-rate of 5000 C (15 mA cm -2 ). Moreover, with sub-millisecond current pulse tests, the reported thin-film heterostructure exhibits rapid Li-ion (de)intercalation, which could lead to fast switching timescales in resistive memory devices and electrochemical transistors.

An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide stack. The performance of GeSn transistors is degraded due to the high density of traps at the oxide-semiconductor interface. Several oxide-gate stacks have been pursued, and a midgap Dit obtained using the ac conductance method, is found in literature. However, a detailed signature of oxide traps like capture cross-section, donor/acceptor behavior and profile in the bandgap, is not yet available. We investigate the transition region between stoichiometric insulators and strained GeSn epitaxially grown on virtual Ge substrates. Al2O3 is used as high-κ oxide and either Ge1-xSnxO2 or GeO2 as interfacial layer oxide. The interface trap density (Dit) profile in the lower half of the bandgap is measured using deep level transient spectroscopy, and the importance of this technique for small bandgap materials like GeSn, is explained. Our results provide evidence for two conclusions. First, an interface traps density of 1.7 × 10(13) cm(-2)eV(-1) close to the valence band edge (Ev + 0.024 eV) and a capture cross-section (σp) of 1.7 × 10(-18) cm(2) is revealed for GeSnO2. These traps are associated with donor states. Second, it is shown that interfacial layer passivation of GeSn using GeO2 reduces the Dit by 1 order of magnitude (2.6 × 10(12) cm(-2)eV(-1)), in comparison to GeSnO2. The results are cross-verified using conductance method and saturation photovoltage technique. The Dit difference is associated with the presence of oxidized (Sn(4+)) and elemental Sn in the interfacial layer oxide.

On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nanolaser that operates at room temperature with a low threshold of 1.69 pJ and a large spontaneous emission factor of 0.04. An epitaxial scheme to grow relatively thick InP nanowires on (001) silicon is developed. The zincblende/wurtzite crystal phase polytypism and the formed type II heterostructures are found to promote lasing over a wide wavelength range.