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The measurement of the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontium-bismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma is reported. The result data shows that depending on the plasma etching conditions, redepostion effect could induce misinterpretation of the etch rate data.

Numerous techniques are used to explain the microstructural, surface morphology and the optical properties of barium strontium titanate ([Ba.sub.0.5][Sr.sub.0.5Ti[O.sub.3] or BST) films deposited by the pulsed laser deposition technique. The films explained are found to be extremely helpful, as they can be widely used for several low loss waveguide, as well as different advanced optical integrated systems.

Laser ablation experiments were undertaken on aluminum and silicon using ultrashort laser pulses.

The pure physical etching characteristics of platinum thin films is examined by using a high-density surface-wave magnetized argon plasma operated in the very low pressure regime together with a rf biased system. The findings indicate that using high-density plasma in the very low-pressure regime yields high etch rates with a good selectivity over resist.

The deposition temperature was measured on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide films.

Diamond-like-carbon (DLC) thin films were deposited at room temperature on Si substrates by ablation of a graphite target utilizing a KrF excimer laser. The microstructure of the films was examined by x-ray photoelectron spectroscopy and Raman spectroscopy. The macroscopic characteristics were determined by measurement of their optical contents through in-situ laser reflectometry and their hardness using continuous stiffness measurement method. Their sp3 hybridized carbon atom content increased with laser intensity.

An experiment is conducted to evaluate the mechanical properties and the Si-C bonding of amorphous silicon carbide thin films using the pulsed laser deposition method. Tests results show that the increase in deposition temperature results to an improvement in the elastic modulus and the hardness of the films. In addition, the rise in temperature also results to an increase in Si-C bond density.

A magnetoplasma reactor sustained by microwaves in conditions similar to electron cyclotron resonance was used to study the etching ability of tungsten, amorphous silicon carbide, and SAL-603 resist. The reactor's flexibility made high etching rates possible with tungsten in respect to the other two materials. The pure SF(sub 6) gas pressure, absorbed microwave power, and launching gap to substate distance were part of the operating conditions.

The characteristics of amorphous hydrogenated a-SiC:H films grown in a conventional plasma enhanced chemical vapor deposition system were investigated using electron recoil detection, x-ray photoelectron spectroscopy and infrared absorption analysis. The results showed that the film composition determined the thickness and density. Hydrogen content was observed to be constant at 27 at.% over the whole composition range. The films exhibited an inorganic-like structure.

Simulations are used for examining the influence of redeposition on the space and time evolution of feature profiles during platinum etching in high-density argon plasmas. The results have shown that indirect redeposition has become crucial at higher pressure for describing the amount of redeposited matter.

The effect of surface chemistry in plasma etching of multicomponent oxides is examined by the measurements of the ion energy dependence of the etch yield. In the case of CBN films etched in an inductively coupled [Cl.sub.2] plasma, the studies have shown that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile Nb[Cl.sub.2] and Ba[Cl.sub.2] compounds being the rate-limiting step.

A simple fluid model was developed in order to investigate the driving kinetics of neutral and charged species in high-density chlorine plasmas. Findings suggest that the dissociation degree of Cl2 molecules is directly linked to the power balance of the discharge, which controls the electron density.

The investigation of the structural arrangement of the sp(super 2) phase in amorphous unhydrogenated carbon nitride (a-CN(sub x)) films and its effect on their physical properties were conducted. The analysis of these results in terms of the sp(super 2) phase in the layers, takes place when deposition was performed at higher laser intensities.

An experimental study of the influence of the plasma parameters on the concentration of neutral and ion species in a chlorine high-density plasma sustained by surface waves is presented. It is seen that for a given magnetic field intensity, a critical pressure exists above which diffusion can be ignored in comparison with ion-ion recombination and charge transfer.