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X-ray absorption fine structures (XAFS) and electron energy loss spectroscopy (EELS) at the Si L(sub 3,2) edge is used to investigate a series if Si nanowires. Optical properties of these Si nanowires are studied by using X-ray excited optical luminescence (XEOL).

An integrated piecewise thermal equilibrium approach based on the first-principles calculation method was developed to calculate bias dependent electronic structures and current- and differential conductance-voltage characteristics of the gold-benzene-1,4-dithiol-gold molecular junction. The results obtained provide insight into the bias induced electron transfer between the two electrodes which causes the local electronic structures in the two electrodes to be different.

Cathodoluminescence (CL) and time-resolved photoluminescence (TRPL) spectroscopy are used to examine the relation between the surface morphology and emission efficiency in 10 x InGaN(3 nm)/GaN(4 nm) quantum wells (QWs) deposited by plasma-assisted molecular beam epitaxy (MBE). The results have shown that the use of {10-1m} faceted surface morphology GaN template is an amplifying process of the potential profile fluctuations (PPFs) that favors regime dominated by the recombination of localized carriers.

A magnetoelectric composite system composed of ferromagnetic CoFe2O4 and relaxor ferroelectric Sr(sub 0.5)Ba(sub 0.5)Nb2O6 as end member is investigated. The results demonstrate that the Pb-free Sr(sub 0.5)Ba(sub 0.5)Nb2O6 relaxor is chemically compatible with the CoFe2O4 ferrite during sintering and their composites can be electrically and magnetically poled to exhibit a significant magnetoelectric effect.