Search

Your search keyword '"Pierreux, D."' showing total 2 results
Start Over Author "Pierreux, D." Publisher american institute of physics, inc.
2 results on '"Pierreux, D."'

1. Composition influence on the physical and electrical properties of [Sr.sub.x][Ti.sub.1-x][O.sub.y]-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Author

Menou, N., Popovici, M., Clima, S., Opsomer, K., Polspoel, W., Kaczer, B., Rampelberg, G., Tomida, K., Pawlak, M.A., Detavernier, C., Pierreux, D., Swerts, J., Maes, J.W., Manger, D., and Badylevich, M.

Subjects
Capacitors -- Composition, Capacitors -- Electric properties, Strontium -- Electric properties, Titanium alloys -- Structure, Titanium alloys -- Electric properties, Physics
Abstract

The physical and electrical properties of [Sr.sub.x][Ti.sub.1-x][O.sub.y] (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are analyzed. The intercept of EOT vs physical thickness plot has shown that increasing the Sr-content at the film interface with the bottom TiN has resulted in lower interfacial equivalent-oxide thickness.

Published
2009

2. P(sub b)-type interface defects in (100)Si/SiO2 structures grown in ozonated water solution

Author

Pierreux, D., Stesmans, A., Changfeng Wu, Shihua Huang, and Jisen Zhang

Subjects
Oxidation-reduction reaction -- Research, Water -- Research, Water -- Electric properties, Ionization -- Research, Silicon compounds -- Research, Silicon compounds -- Electric properties, Physics
Abstract

The Si dangling bond interface defects are probed by electron spin resonance in entities of (100)Si with ultrathin SiO2 grown in Ozonated de-ionized water solution at room temperature. Standard quality thermal Si/SiO2 interface properties are not obtained by oxidation in ozonated water solutions at room temperature, which can be upgraded by providing additional thermal budget.

Published
2003

Catalog

Books, media, physical & digital resources
See catalog results