1. High carrier mobility in low band gap polymer-based field-effect transistors.
- Author
-
Miaoxiang Chen, Crispin, Xavier, Perzon, Erik, Andersson, Mats R., Pullerits, Tönu, Andersson, Mattias, Inganäs, Olle, and Berggren, Magnus
- Subjects
- *
POLYMERS , *FIELD-effect transistors , *TRANSISTORS , *FLUORENE , *THIOPHENES , *OPTOELECTRONIC devices - Abstract
A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V-1 s-1. [ABSTRACT FROM AUTHOR]
- Published
- 2005
- Full Text
- View/download PDF