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Electronic structures and band topology of a single Sb(111) bilayer in the buckled honeycomb configuration are investigated using first-principles calculations. A nontrivial topological insulating phase can be induced by tensile strain, indicating the possibility of realizing the quantum spin Hall state for Sb thin films on suitable substrates. The presence of buckling provides an advantage in controlling the band gap through an out-of-plane external electric field, making a topological phase transition with six spin-polarized Dirac cones at the critical point. With a tunable gap and reversible spin polarization, Sb thin films are promising candidates for spintronic applications. [ABSTRACT FROM AUTHOR]

This letter investigates asymmetrical degradation behavior induced by the self-heating effect in InGaZnO thin-film transistors. Both the surrounding oxide and other thermal insulating material, as well as the low thermal conductivity of the InGaZnO layer itself, cause the self-heating effect in InGaZnO thin-film transistors. The heated channel layer enhances threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effect. Moreover, a non-uniform distribution of channel carrier concentration leads to an uneven temperature distribution through the InGaZnO active layer and results in the asymmetrical degradation behavior after self-heating operation. [ABSTRACT FROM AUTHOR]

This paper investigates the degradation mechanism under self-heating stress for InGaZnO thin film transistor. The apparent positive threshold voltage (Vt) shift and on-current degradation indicate that the combination of trap states generation and electron trapping effect occur during stress. Furthermore, the asymmetric degradation behavior in the Id-Vg saturation measurement demonstrates that the trap states location is near the source side since the relative vertical electrical field is higher than drain side. Moreover, the Joule heating generated by self-heating operation can enhance electron trapping effect and cause larger Vt shift in comparison with the gate-bias stress. [ABSTRACT FROM AUTHOR]