1. Influence of polymer gate dielectrics on n-channel conduction of pentacene-based organic field-effect transistors.
- Author
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Guo, Tzung-Fang, Tsai, Zen-Jay, Chen, Shi-Yu, Wen, Ten-Chin, and Chung, Chia-Tin
- Subjects
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ORGANIC field-effect transistors , *PENTACENE , *THIN-film circuits , *ELECTRON mobility , *DIELECTRICS , *HYDROXYL group , *ELECTRIC conductivity , *POLYMERS - Abstract
This work elucidates the way polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a poly(vinyl alcohol) polymer interfacial film and another cross-linked poly(4-vinyl phenol) layer as a double-layer gate dielectric causes the pentacene-based OFETs to exhibit effective n-channel conduction of a saturated, apparent pinch-off drain-source current with the electron mobility of ∼0.012 cm2 V-1 s-1. The formation of an n channel in the pentacene layer is supported by the increased capacitance that is identified by the quasistatic capacitance-voltage measurements of devices with the metal-insulator-semiconductor configuration, biased at a positive gate voltage, in the n-type accumulation regime. [ABSTRACT FROM AUTHOR]
- Published
- 2007
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