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Reports on a low-pressure metalorganic chemical vapor deposition of aluminum using triethylamine alane. Function of the liquid source; Activators for nucleation of aluminum; Electrical resistivities of the aluminum films on titanium-nitrogen.

Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface-state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer. [ABSTRACT FROM AUTHOR]

Excimer laser photolysis of organoaluminum adlayers has been used to catalytically activate the deposition of Al via thermal decomposition of triisobutylaluminum. The process exhibits good spatial selectivity and patterns with 4 μm resolution have been accurately reproduced. Patterned Al metallizations have been performed on Si, SiO2, Al2O3, and GaAs substrates and show promise for practical applications. Electrical measurements probing Al/substrate interface quality indicate that this technique may be suitable for the fabrication of rectifying contacts on GaAs. [ABSTRACT FROM AUTHOR]

We demonstrate the projection patterning of Al by laser activated metalorganic chemical vapor deposition. The laser activated deposition technique, which selects surface over gas phase reactions, is found to be compatible with standard photolithographic patterning and shows promise for simplifying integrated circuit fabrication. Two applications are highlighted: metal-oxide field-effect transistor metallization and Al interconnect fabrication. [ABSTRACT FROM AUTHOR]