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We have systematically analyzed the effect of strain on the electrical properties of flexible field effect transistors with a single-walled carbon nanotube (SWCNT) network on a polyethersulfone substrate. The strain was applied and estimated at the microscopic scale (<1 μm) by using scanning electron microscope (SEM) equipped with indigenously designed special bending jig. Interestingly, the strain estimated at the microscopic scale was found to be significantly different from the strain calculated at the macroscopic scale (centimeter-scale), by a factor of up to 4. Further in-depth analysis using SEM indicated that the significant difference in strain, obtained from two different measurement scales (microscale and macroscale), could be attributed to the formation of cracks and tears in the SWCNT network, or at the junction of SWCNT network and electrode during the strain process. Due to this irreversible morphological change, the electrical properties, such as on current level and field effect mobility, lowered by 14.3% and 4.6%, respectively. [ABSTRACT FROM AUTHOR]

An optical loss of GaN-based blue-violet laser diodes (BV-LDs) was measured by taking the intensity decay of edge emitting luminescence with respect to the distance from cleaved edge of a wafer to the position where an excitation laser was focused. Amplified spontaneous emission (ASE) was also investigated by tuning the power of an excitation laser on BV-LD wafers. Measurements were performed on wafers with different thicknesses of InGaN optical confinement layers (OCLs). The threshold power of ASE intensity was minimized at an optimum thickness of InGaN OCL. We also found that optical loss of wafers was determined by absorption of an InGaN layer in thicker OCL structure. From experimental data and fittings, we obtained 40 cm-1 for InGaN absorption at 405 nm. The optical field confined in OCL region was reasonably high enough to affect the overall modal loss in devices. Therefore, the optical losses still remained even though the Mg-doped GaN regions are far enough from the active layers. The crystal quality of an InGaN layer should be an important aspect to improve the performance of BV-LDs. [ABSTRACT FROM AUTHOR]

Comparative analysis of optical characteristics of In0.08Ga0.92N/In0.03Ga0.97N multiquantum well (MQW) laser diode structures grown on freestanding GaN and on sapphire substrates is reported. Higher quantum efficiency, higher thermal activation energy, smaller Stokes-like shift, and shorter radiative lifetime are observed for InGaN MQWs on GaN substrate than those of the same MQWs on sapphire substrate. From time-resolved optical analysis, we find that not only an increase in nonradiative lifetime due to reduced dislocation density but also a decrease in radiative lifetime caused by suppressed piezoelectric field play an important role in enhancing optical properties of InGaN MQWs on GaN substrates. [ABSTRACT FROM AUTHOR]

Photoreflectance (PR) spectra at various temperatures and photoluminescence (PL) spectra and high-resolution x-ray rocking curve (XRC) measurements are used to investigate the band alignment, epitaxial-strain, and atomic-ordering effects in In0.54Ga0.46P1-yNy/GaAs (y=0%–2.0%) heterostructures. The existence of additional peaks in PR spectra at higher levels of nitrogen (N) incorporation implies that the band alignment switches from type I to type II, due to the lowering of the conduction band. The electric field at the interface is determined and is discussed with the N content. Redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as N is incorporated. The valence-band splitting (VBS) and the spin-orbit splitting of InGaPN are obtained from PR spectra. High-resolution XRC measurements indicate that as the N content increases, the lattice mismatch and the compressive strain between the epilayer and GaAs substrate decrease while the VBS increases, which implies an increase in the degree of ordering in InGaPN caused by the transition from a cubic zinc blende structure to a [111] CuPt structure. The order parameter η of InGaPN deduced from the VBS ranges from 0.256 to 0.498, indicating that the InGaPN epilayer becomes more ordered with increasing N incorporation. [ABSTRACT FROM AUTHOR]

We demonstrate the fabrication of nanoelectromagnets and the magnetic capture of a single magnetic nanoparticle. The magnetic nanoparticles are extracted from magnetotactic bacteria and their diameter is approximately 50 nm. We show that a single nanoparticle is captured at each corner of the serpentine-shaped nanoelectromagnet, and the maximum magnetic field of 35 mT (and the maximum magnetic-field gradient of 4×105 T/m) is shown to be created at the capture spots of the nanoelectromagnet. It is also shown that there is a crossover between the magnetic force and the diffusion force at several hundred nm away from the magnet. This distance is comparable to the average interparticle distance. [ABSTRACT FROM AUTHOR]

Photoreflectance (PR) and Raman spectra were employed to investigate the interfacial characteristics of a series of oxide films on GaAs. The barrier heights across the interfaces and the densities of interracial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the low 10[sup 11] cm[sup -2] range. The density of the interface states of the Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])-GaAs structure is as low as (1.24±0.14)×10[sup 10] cm[sup -2]. The Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) dielectric film has effectively passivated the GaAs surface. Additionally, Raman spectra were used to characterize the structural properties of the oxide films. [ABSTRACT FROM AUTHOR]

The surface barrier height and surface Fermi level of InA1As were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 µW/cm². [ABSTRACT FROM AUTHOR]

Photoreflectance is used to investigate the band gap, built-in electric field, and surface Fermi level of a series of lattice-matched In[sub 0.52]Al[sub 0.48]As surface-intrinsic n[sup +] structures having different undoped layer thicknesses. Experimental results indicate that, although the built-in electric field depends on the undoped layer thickness, there is a range of thickness within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we can determine that the surface states distribute over two separate regions within the energy band gap. The densities of the surface states are evaluated as well. Moreover, the dependence of the built-in electric field on undoped layer thickness is converted into the dependence of surface state density on the surface Fermi level in order to theoretically and exactly calculate the energy spectrum of the surface state density using a Guassian distribution function. The center and width of the distribution near the conduction band are obtained from the fitting parameters. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

BBTMPO was synthesized by a condensation of 4-n butyl benzaldehyde and 4-amino 2,2,6,6-tetramethyl piperidine N-oxide (4-tempamine). The shape of the resulting spin probe, estimated using the Dreiding models, is a spherocone of length 10.7 Å capped by hemispheres of radii 6.6 and 4.0 Å, respectively. The magnetic parameters of BBTMPO in toluene at 77 K were determined. Variable temperature ESR line shape studies in the temperature range of 142–211 K revealed that BBTMPO exhibited anisotropic rotational diffusion in toluene along the long axis of the spherocone and in the direction parallel to the N–O bond. Rotational diffusion along the long axis was found to be 3±0.5 and 7±0.5 times faster for frozen and liquid toluene, respectively, than the other two axes. The line shapes have been simulated by using the stochastic Liouville theory of slow-motional effects on ESR spectrum. The slow tumbling spectrum (158 K) in the model-sensitive region showed good agreement for a Brownian model. The plot of τR vs 1/T over the whole temperature range yield a good linear fit with two slopes, with the activation energy for reorientation process of 4.9 kcal/mol in the liquid state, and 9.9 kcal/mol in the solid state. The higher activation energy of rotational reorientation coupled with a lower anisotropy of molecular reorientation (N) in the solid state, indicates that the rotational degrees of freedom is more restricted in the frozen state than in the liquid state. Molecular reorientation for BBTMPO in toluene was analyzed in terms of the hydrodynamic free space model for molecular relaxation in liquids. The stickiness factor S was found to be 0.6 while the anisotropic interaction parameter κ which measures the coupling of rotation to translation was found to be 0.7. For perdeuterated 2,2,6,6-tetramethyl-4-piperidine N-oxide (PD-Tempone) in toluene the stickiness factor was calculated to be 0.3, and κ was 0.4. The doubling in... [ABSTRACT FROM AUTHOR]

Presents information on a study which applied the quantum Hall effect measurements on modulation-doped gallium arsenic (GaAs)/aluminum GaAs heterostructures. Experimental procedures; Results and discussion; Conclusion.

Presents a study that investigated the variations of Raman spectra for silicon-implanted gallium antimonide (GaSb) with various doses and energies. Advantages of ion-implantation technology over diffusion; Analysis of the Raman spectrum of the unimplanted GaSb wafer; Reasons for the broadening and weakening of the transverse and longitudinal optical phonon modes.

Temperature-dependent photoreflectance (PR) measurements are employed to characterize the conduction band structure of In0.54Ga0.46P1-yNy (y=0 and 0.02) grown on GaAs substrates. The band gap and the upper subband E+ transition are observed in InGaPN as predicted by the band anticrossing (BAC) model. To investigate the energetic positions of the features in the PR spectra, a Kramers–Kronig analysis is proposed. Based on the PR data and the BAC model, we find that the energy EN of isolated nitrogen states shifts significantly to higher energies with decreasing temperature. Simultaneously, the interaction potential V between the nitrogen states and the unperturbed conduction band also rises to higher values. At 293 K, EN=2.054 eV and V=1.513 eV are determined. The thermal shifts of EN and V are dEN/dT≈-0.43 meV/K and dV/dT≈-0.67 meV/K, respectively. The temperature-dependent EN level and interaction potential V are attributed to the lattice distortions, which can be affected by temperature-induced changes in deformation potential. This information is important for overall validity of the BAC model to dilute nitride InGaPN alloys. [ABSTRACT FROM AUTHOR]

Coordination polymers exhibiting magnetic properties can be considered as promising materials for magnetic applications. We obtained such materials by means pf mechanochemical incorporation of binuclear metal complexes Mn–O–Mn into polystyrene. Incorporation of binuclear manganese complexes was achieved by using substituted benzoquinones (organic acceptors) as intermediate ligands that react with manganese acetylacetonate and provide new coordination and stabilization of manganese in different valence states. Magnetic transitions in this system are due to reversible disproportionation process Mn3+–O–Mn3+⇔Mn2+–O–Mn4+ in the binuclear complex. The structure of the binuclear complex was obtained using ab initio calculations. [ABSTRACT FROM AUTHOR]

We report on mechanochemical synthesis and magnetic and electric properties of organic polymeric semiconductor that contains paramagnetic and ferromagnetic particles. As starting materials we used polyaniline (emeraldine base), polystyrene, FeCl3, and elemental sulfur. These components were chosen for the purpose of obtaining semiconductor polymer composite containing magnetic iron nanoparticles and having flexible thermomechanical properties. The presence of nanoparticles was evidenced by scanning electron microscopy. The value of conductivity of the Fe-doped polymer composite was increased by several orders of magnitude compared to the initial undoped polyaniline. Temperature dependence of the conductivity shows semiconductor character of the composite material. [ABSTRACT FROM AUTHOR]

By means of mechanochemical synthesis we obtained a coordination polymer containing binuclear manganese complexes with organic catechol/ortho-quinone ligands. The reaction system contained polystyrene, manganese acetylacetonate, and donor-acceptor mixture catechol/ortho-quinone. Electron paramagnetic resonance (EPR) and infrared spectroscopic data show that the binuclear manganese complex is covalently linked to the chain of polystyrene. Theoretical EPR spectrum analysis revealed a triplet state of the complex with two nonequivalent manganese ions coupled to each other by spin exchange. The type of magnetic coupling between manganese ions in this system is similar to the one in manganese based inorganic magnetic materials. [ABSTRACT FROM AUTHOR]

Both the epitaxial-strain and atomic-ordering effects in In0.54Ga0.46P1-yNy/GaAs (y=0%-2.0%) heterostructures are characterized by high-resolution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard’s law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS. [ABSTRACT FROM AUTHOR]

We investigated paramagnetic properties of binuclear niobium complexes Nb-O-Nb with two nonequivalent Nb4+ ions in lithium-niobium phosphate glasses sLNPGd, in the environment of catechol/ortho-quinone ligands and in polyethylene. Experimental electron paramagnetic resonance spectrum analysis revealed nonequivalent distribution of the charge and electron spin density between two Nb atoms. Mechanochemical interaction of LNPG with an organic donor-acceptor mixture catechol/ortho-quinone followed by organic solvent extraction leads to the formation of a new binuclear complex with catechol/ortho-quinone ligands. This complex can be further incorporated into polyethylene matrix to form the complex with properties close to the complex in LNPG. [ABSTRACT FROM AUTHOR]

Chromium complexes, where ortho-quinone ligands are covalently linked to polymeric chains of polyethylene, polystyrene, and copolymer of ethylene and vinylacetate are studied. The results of infrared and electron paramagnetic resonance spectroscopic studies of chromium coordination polymers show that covalent linking of quinone ligands is accompanied by the change in the valence states of chromium Cr(III)↔Cr(IV)↔Cr(V). The ligand field of the triplet Cr4+ ion is close to the one in Cr-doped Y2SiO5, a laser material in the visible and infrared regions. Therefore some useful magnetic and/or optical properties in such transition metal coordination polymers can be expected. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report on synthesis of Co, Ni, and Fe nanoparticles by the action of elastic wave pulses on solid phase sandwich type samples containing metal salt, reducing agent, polyethylene, and polyacrylamide. The formation of metal nanoparticles is evidenced by ferromagnetic resonance and scanning electron microscopy. The product yield for the nanoparticles formation has a threshold character with the pressure in the elastic wave pulse. The maximum amount of Co, Ni, and Fe nanoparticles is observed around 20 kbar of pressure in elastic wave pulses. The presence of polyacrylamide in reaction composites increases the stability of metal nanoparticles to oxidation by two orders of magnitude. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

In general metamaterial perfect absorber, the single meta-pattern makes the single absorption band. Therefore, the multi-absorption bands need the corresponding kinds of meta-patterns. Here, we introduce the triple-band metamaterial perfect absorber utilizing only single kind of pattern. We also demonstrate the absorption mechanism of the triple perfect absorption. The first and the second absorption bands were induced by the fundamental magnetic resonance of the major and the minor axes, respectively, of cut-wire bar. The third peak was caused by the third-harmonic magnetic resonance of the major axis. Additionally, the unexpected third band was formed, which was the overlapping of the third absorption peak with another absorption peak, which was made by pairs of antiparallel currents parallel or antiparallel to the incident electromagnetic wave. [ABSTRACT FROM AUTHOR]

We present a simple drop-casting method for preparing multiferroic nano-composite film where BiFeO3 (BFO) nanoparticles (NPs) were evenly dispersed into polyvinyl alcohol (PVA) polymer. BFO NPs used in this work were synthesized by the conventional sol-gel method, having diameter of tens of nm and being in good crystallinity. The BFO NPs were loaded into a highly insulating PVA polymer solution as filler. The multiferroic properties of the film reveal ferromagnetic ordering due to the uncompensated spiral ordering and saturated ferroelectric curves due to the cut-off of current leakage. Moreover, the prepared films show high flexibility and their multiferroicities are preserved well even in a high curved condition, reflecting the possibility for fabricating wearable devices based on multiferroic materials. [ABSTRACT FROM AUTHOR]

The magneto-optical (MO) properties of two-dimensional bilayered magnetic anti-dot lattice (BMAL) structure, which consists of upper perforated 'Co' layer over uniform 'Ni' underlayer in square-lattice arrangement, were investigated. Enhancement in the MO activity was found in such structures. Nearly 4 times larger MO-Kerr activity was observed for the first-order diffracted beam as compared with that of the zeroth-order one. To understand the origin of the enhanced MO rotation, the magnetization-domain configuration was also investigated by field-dependent magnetic-force microscopy. Additionally, comparison between MO response and magnetization-domain configuration for the rhomboid BMAL structure was done, which allowed us to understand more clearly the enhancement of MO properties. [ABSTRACT FROM AUTHOR]

We have prepared BiFe0.95Ni0.05O3 by the standard solid-state reaction and rapid sintering. The structural analysis by x-ray diffraction for BiFe0.95Ni0.05O3 shows rhombohedral perovskite structure (R3c), and lattice constants a and c of BiFe0.95Ni0.05O3 are slightly increased as compared to those of BiFeO3. The Raman studies present the increase of oxygen vacancy by the Ni2+ substitution. The magnetic properties of BiFe0.95Ni0.05O3 are greatly improved, owing to the enhanced ferromagnetic interaction caused by the Fe/Ni coupling. BiFe0.95Ni0.05O3 sample is ferromagnetic with a cluster-glass state unlike the antiferromagnetic BiFeO3-based compounds. [ABSTRACT FROM AUTHOR]

Room-temperature photoreflectance is employed to investigate the Fermi level pinning and surface state density of a GaAs0.65Sb0.35 surface intrinsic-n+ (SIN+) structure. Based on the thermionic emission theory and current-transport theory, the surface Fermi level VF and surface state density are determined experimentally from the dependence of the surface barrier height on the pump beam intensity. The surface state density Ds is estimated as approximately 1.91×1013 cm-2, and the Fermi level is located 0.63 eV below the conduction band edge at the surface. By sequential etching of the intrinsic layer, the Fermi level pinning in GaAs0.65Sb0.35 SIN+ structure is further demonstrated. [ABSTRACT FROM AUTHOR]

This letter investigates the polarity of terahertz radiation from indium nitride (InN) excited by femtosecond optical pulses wherein a central wavelength of around 790 nm is measured. The InN epilayers are grown by metalorganic chemical vapor deposition on sapphire and silicon substrates. The polarity of the terahertz radiation field from InN is opposite to that from p-InAs whose radiation mechanism is dominated by the photo-Dember effect indicating that the dominant radiation mechanism in InN is the drift current induced by the internal electric field at low-density excitation below 590 nJ/cm2. The internal electric field consists of the surface accumulation field and the spontaneous polarization-induced electric field. In addition, since no azimuthal angle dependence of the terahertz radiation is observed, the optical rectification effect is ruled out. By comparing the wave forms of terahertz radiation from the front and the back of the InN sample grown on sapphire in reflection geometry, the N polarity of the InN sample is confirmed. [ABSTRACT FROM AUTHOR]

Direct comparison of optical properties and carrier dynamics of InGaN multiple quantum well (MQW) laser diode structures grown on pendeo epitaxial (PE)-GaN and sapphire substrates is reported. A strong increase in quantum efficiency and a dramatic reduction in stimulated emission threshold are observed for InGaN MQWs on PE-GaN substrates as compared to MQWs on sapphire substrates. Based on temperature-dependent time-resolved optical analysis, the authors find that a significant increase in nonradiative lifetime due to suppressed dislocation density plays an important role in enhancing optical properties of InGaN MQWs grown on PE-GaN substrates, resulting in radiative-process dominant emission even at room temperature. [ABSTRACT FROM AUTHOR]

Time-lapsed emission peak shift behaviors in blue-light-emitting InGaN multiple quantum well (MQW) laser diodes with different well widths are systematically investigated by means of excitation power-dependent, time-resolved optical analysis. By investigating the main emission peak shift as a function of both time evolution and excitation power density, the amount of time-lapsed emission peak shift can be differentiated by two contributions: the excitation power dependent and independent ones. The authors conclude that the power-dependent (power-independent) time-lapsed peak shift can be attributed to the internal electric-field (carrier localization) effect present in vertical growth (lateral in-plane) direction of InGaN MQW laser diode structures. [ABSTRACT FROM AUTHOR]

Temperature-dependent photoreflectance measurements are employed to characterize the electronic band structure of InGaPN grown on GaAs substrates. In addition to the fundamental band gap, the upper subband E+ is observed as predicted by the band anticrossing (BAC) model. By eliminating the contributions of the epitaxial-strain and atomic-ordering effects in InGaPN and also assigning the localized state energy EN introduced by an isolated N to be 2.040 eV at 293 K, the interaction potential V is determined as 1.449±0.170 eV. The incorporation of a temperature-dependent EN level into the BAC model fits the experimental data better than assuming EN to be a constant. This contrasts with previously published results and so provides a different view of the temperature dependence of the EN level in InGaPN. [ABSTRACT FROM AUTHOR]

We demonstrate the fabrication and characterization of single electron transistors composed of Au nanoparticles and insulating molecular tunnel barriers. We fabricated these devices by forming a 1,8-octanedithiol self-assembled monolayer on Au nanogap electrode pairs and by bridging them with colloidal Au nanoparticles using ac dielectrophoresis. We observed the typical characteristics of these single electron transistors at the temperature from 4.2 to 300 K. The measured data were consistent with the orthodox theory of Coulomb blockade. [ABSTRACT FROM AUTHOR]

This study examines terahertz radiation from a series of In0.52Al0.48As and GaAs surface-intrinsic-N+ structures (SIN+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SIN+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers. [ABSTRACT FROM AUTHOR]

The effect of weak ordering on InGaPN/GaAs heterostructure grown by gas source molecular-beam epitaxy is quantitatively studied by room-temperature Raman, photoluminescence (PL), and photoreflectance spectroscopy in this work. The PL intensity decreases rapidly as the nitrogen concentration increases, implying that more nonradiative centers are generated by the ordering effect and the degradation of the samples. The band gap of InGaPN decreases dramatically as the nitrogen is incorporated. The Raman modes of InGaPN between 130 and 1000 cm-1 are analyzed. Polarized Raman spectra reveal that the InGaPN layers become more ordered as more nitrogen is incorporated. A broad Raman structure that appeared around 730 cm-1 is attributed to an InGaN-like LO-phonon mode. The transition of the crystal structure from the zinc blende to CuPt structure and the formation of GaN clusters are responsible for the ordering effect in the InGaPN layer. [ABSTRACT FROM AUTHOR]

A simple method to enhance atomic force microscopy local oxidation by coating the substrate with a thin layer of gold is reported. The effect of gold coating is demonstrated experimentally by atomic force microscopy oxidation at various thicknesses of gold on Si and InP. Oxide heights reaching 30 nm are easily achieved on silicon at rates 10 times greater than traditional methods. The gold layer is assumed to increase conductance and current during oxidation, thereby reducing decline in growth rates caused by the increasing resistance of the growing oxide layer itself. Improvement in growth rate and height increases with increasing gold thickness up to a maximum height, but beyond that thickness the heights and rates decrease because the gold layer itself becomes a barrier to the migration of oxyions. The presented method is demonstrated to improve the oxidation rate and height on normal and highly resistive substrates, with lower requirements for applied voltage during oxidation. [ABSTRACT FROM AUTHOR]

Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra are measured for a series of In0.54Ga0.46P1-yNy/GaAs heterostructures grown on GaAs (100) substrate. Redshifts of the PR and PL peaks indicate that the band gap of In0.54Ga0.46P1-yNy is dramatically reduced as nitrogen is incorporated. The emergence of additional peaks in PR spectra as nitrogen is incorporated indicates that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between In0.54Ga0.46P1-yNy and GaAs. The band gap energy and transition energies between the confined levels in the 2DEG are determined for samples with various nitrogen concentrations y. The number of confined levels in the 2DEG is found to increase with y; the composition-dependent bowing parameter is determined. [ABSTRACT FROM AUTHOR]

We demonstrate the effect of Ti thickness on the contact resistance between GaN nanowires and Ti/Au electrodes. We have carried out systematic characterization of many GaN nanowires contacted by various Ti/Au electrodes. We conclude that the average resistance is reduced by almost six orders of magnitude as Ti thickness increases from 0 to 20 nm, and the resistance value then saturates when the Ti thickness further increases. Our observation can be explained by the formation of TiOx through the reaction of surface oxide and the Ti layer. Scanning Auger microscopy of the Au/Ti/SiO2 interface also supports this explanation. [ABSTRACT FROM AUTHOR]

We report electrical transport through 60 base pairs of poly(dG)-poly(dC) DNA molecules. The DNA solution is dropped on two metal electrodes with the gap of 20 nm. The current-voltage characteristics measured between the electrodes exhibits clear staircases, which are reproducible over repeated measurements. The size of the observed staircases is consistent with the energy gap obtained from a tight binding calculation. [ABSTRACT FROM AUTHOR]

This letter reports the synthesis of indium nitride (INN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 µm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm[sup -1], which are attributed to the A[sup 1](transverse optical), E[sub 2], and A[sub 1](longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV. [ABSTRACT FROM AUTHOR]

It has been well proved that there are infinitely many resonances in the scattering problem provided the potential V(t) satisfies the moment conditions ∫∞0|V(t)|tn dt =O(n(1-ε)n), ε>0, n=0,1, ... . In particular, if V(t) has a compact support then the result of Rollnik [H. Rollnik, Z. Phys. 145, 654 (1956)] and Regge [T. Regge, Nuovo Cimento, 8, 671 (1958)] is obtained and if |V(t)|∼exp(-τt1+ε), τ,ε>0, we have the results of Sartori [L. Sartori, J. Math. Phys. 4, 1408 (1963)]. [ABSTRACT FROM AUTHOR]

The bandgap, surface Fermi level, and surface state density of a series of GaAs1-xSbx surface intrinsic-n+ structures with GaAs as substrate are determined for various Sb mole fractions x by the photoreflectance modulation spectroscopy. The dependence of the bandgap on the mole composition x is in good agreement with previous measurements as well as predictions calculated using the dielectric model of Van Vechten and Bergstresser in Phys. Rev. B 1, 3551 (1970). For a particular composition x, the surface Fermi level is always strongly pinned within the bandgap of GaAs1-xSbx and we find its variation with composition x is well described by a function EF = 0.70 - 0.192 x for 0 <= x <= 0.35, a result which is notably different from that reported by Chouaib et al. [Appl. Phys. Lett. 93, 041913 (2008)]. Our results suggest that the surface Fermi level is pinned at the midgap of GaAs and near the valence band of the GaSb. [ABSTRACT FROM AUTHOR]