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X-ray absorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mg doping in ZnO nanorods. The intensities of the features in the O K-edge XANES spectra of Zn1-xMgxO nanorods are lower than those of pure ZnO nanorods, suggesting that Mg doping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mg doping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the band gap. The band gap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements. [ABSTRACT FROM AUTHOR]

The Soft X-ray Undulator beamline at the NSLS supports a soft x-ray imaging program including scanning transmission microscopy, scanning photoemission microscopy, Gabor and Fourier transform holography, and large angle diffraction. Zone plates from an LBL Center for X-ray Optics/IBM collaboration are used as optical elements. The current instrumentation of the beamline and the experimental stations is discussed, along with plans for the future at the NSLS and prospects for imaging programs at third generation sources. [ABSTRACT FROM AUTHOR]

The chemical state of N in N-doped amorphous Ge2Sb2Te5 (a-GST) samples with 0–14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeNx) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeNx was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeNx, rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature. [ABSTRACT FROM AUTHOR]

Examines the impact of an elliptical, high resolution zone plate on the performance of an initially astigmatic soft x-ray scanning photoemission microscope. Improvement in spatial resolution; Domination of source size and chromatic aberrations in the resolution; Possibility of a future gain in resolution.

The chemical state of N in N-doped amorphous Ge2Sb2Te5 (a-GST) samples with 0–14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeNx) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeNx was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeNx, rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature. [ABSTRACT FROM AUTHOR]